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Communication Dans Un Congrès Année : 2014

3C-SiC Seeded Growth on Diamond Substrate by VLS Transport

Résumé

This work deals with the localized epitaxial growth of SiC on (100) diamond substrate using the Vapour-Liquid-Solid (VLS) transport. An epitaxial relationship of grown SiC with the seed was succesfully achieved when inserting a silicidation step before the VLS growth. This silicidation consists in the formation of a SiC intermediate layer on the diamond substrate by solid-state reaction with a silicon layer deposited at 1000 or 1350 °C. On the 1350°C formed SiC buffer layer, p-doped 3C-SiC(100) islands elongated in the <110> directions were obtained after VLS growth. For the 1000°C buffer layer, the SiC deposit after VLS growth is much denser but mostly polycrystalline. Interfacial reactivity and diffusion are considered to explain the obtained results.
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Dates et versions

hal-02875458 , version 1 (19-06-2020)

Identifiants

Citer

Arthur Vo-Ha, Mickael Rebaud, Davy Carole, Mihai Lazar, Alexandre Tallaire, et al.. 3C-SiC Seeded Growth on Diamond Substrate by VLS Transport. ICSCRM 2013, Sep 2013, Miyazaki, Japan. pp.234-237, ⟨10.4028/www.scientific.net/MSF.778-780.234⟩. ⟨hal-02875458⟩
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