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Article Dans Une Revue Semiconductor Science and Technology Année : 2001

Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures

J Harris
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K Lee
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T. Wang
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S. Sakai
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Ingrid Moerman
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E Thrush
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J Webb
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Hao Tang
T Martin
Duncan Kennedy Maude
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J-C Portal
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Résumé

Carrier transport in a set of AlGaN/GaN heterostructures from different sources with a range of carrier densities and mobilities has been investigated at low temperature and high magnetic fields. The Shubnikov-de Haas oscillations have been analysed to extract the quantum scattering lifetime, τq, and this is compared with the classical transport lifetime, τt, derived from the low-field mobility. The relationship between these parameters has been observed to depend systematically on the low-field mobility of the samples studied, and indicates that higher-mobility samples suffer less scattering from centres close to the two-dimensional conducting channel.

Dates et versions

hal-02906503 , version 1 (24-07-2020)

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J Harris, K Lee, T. Wang, S. Sakai, Z. Bougrioua, et al.. Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures. Semiconductor Science and Technology, 2001, 16 (5), pp.402-405. ⟨10.1088/0268-1242/16/5/321⟩. ⟨hal-02906503⟩
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