Thermally deposited silk fibroin as the gate dielectric layer in organic thin-film transistors based on conjugated polymer - Archive ouverte HAL Access content directly
Journal Articles Reactive and Functional Polymers Year : 2018

Thermally deposited silk fibroin as the gate dielectric layer in organic thin-film transistors based on conjugated polymer

Yi-Hsing Huang
  • Function : Author
Chi-Ching Kuo
Chia-Jung Cho
  • Function : Author
Syang-Peng Rwei
  • Function : Author
Qun Jia
  • Function : Author
Yuansheng Ding
  • Function : Author
Yougen Chen
  • Function : Author
Redouane Borsali
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hal-02954615 , version 1 (01-10-2020)

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Fang-Cheng Liang, Yi-Hsing Huang, Chi-Ching Kuo, Chia-Jung Cho, Syang-Peng Rwei, et al.. Thermally deposited silk fibroin as the gate dielectric layer in organic thin-film transistors based on conjugated polymer. Reactive and Functional Polymers, 2018, 131, pp.368-377. ⟨10.1016/j.reactfunctpolym.2018.08.010⟩. ⟨hal-02954615⟩

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