@article{haffner:hal-03027755, TITLE = {{Improvement of the electrical performance of Au/Ti/HfO 2 /Ge 0.9 Sn 0.1 p-MOS capacitors by using interfacial layers}}, AUTHOR = {Haffner,, T. and Mahjoub,, M.A. and Labau,, S. and Aubin,, J. and Hartmann,, J.M. and Ghibaudo,, G. and David,, S. and Pelissier,, B. and Bassani,, F. and Salem, B.}, URL = {https://cnrs.hal.science/hal-03027755}, JOURNAL = {{Applied Physics Letters}}, PUBLISHER = {{American Institute of Physics}}, VOLUME = {115}, NUMBER = {17}, PAGES = {171601}, YEAR = {2019}, MONTH = Oct, DOI = {10.1063/1.5121474}, PDF = {https://cnrs.hal.science/hal-03027755/file/APL.pdf}, HAL_ID = {hal-03027755}, HAL_VERSION = {v1}, }