%0 Journal Article %T Improvement of the electrical performance of Au/Ti/HfO 2 /Ge 0.9 Sn 0.1 p-MOS capacitors by using interfacial layers %+ Laboratoire des technologies de la microélectronique (LTM ) %+ Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI) %A Haffner,, T. %A Mahjoub,, M.A. %A Labau,, S. %A Aubin,, J. %A Hartmann,, J.M. %A Ghibaudo,, G. %A David,, S. %A Pelissier,, B. %A Bassani,, F. %A Salem, B. %< avec comité de lecture %@ 0003-6951 %J Applied Physics Letters %I American Institute of Physics %V 115 %N 17 %P 171601 %8 2019-10-21 %D 2019 %R 10.1063/1.5121474 %Z Physics [physics]/Condensed Matter [cond-mat] %Z Engineering Sciences [physics]Journal articles %X The impact of different interfacial layers (ILs) on the electrical performances of Au/Ti/HfO 2 /Ge 0.9 Sn 0.1 metal oxide semiconductor (MOS) capacitors is studied. Parallel angle resolved x-ray photoelectron spectroscopy measurements show that germanium diffuses into the HfO 2 layer when no IL is used. This results in an increase in the tin content at the interface and a high interface state density. We demonstrate that the use of an IL prevents germanium and HfO 2 intermixing and improves the electrical performance of MOS capacitors. Several ILs are studied such as alumina (Al 2 O 3) and plasma oxidized GeSn (GeSnO x) prior to HfO 2 deposition. C-V measurements correlated with simulations made by a customized analytical model indicate an interface state density of 5 Â 10 11 eV À1 cm À2 for the HfO 2 /GeSnO x /Ge 0.9 Sn 0.1 gate stack. This result is promising for the integration of high mobility GeSn channels in CMOS devices. %G English %2 https://cnrs.hal.science/hal-03027755/document %2 https://cnrs.hal.science/hal-03027755/file/APL.pdf %L hal-03027755 %U https://cnrs.hal.science/hal-03027755 %~ CEA %~ UGA %~ CNRS %~ LTM %~ NANOMATERIALS %~ DSV %~ DRT %~ CEA-DRF %~ LETI %~ CEA-GRE %~ UGA-COMUE