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Communication Dans Un Congrès Année : 2011

Weak localization and universal conductance fluctuations on epitaxial graphene grown on the C-face of 8 degrees off-axis 4H-SiC substrates

Résumé

We report magnetotransport measurements in single epitaxial graphene layers grown on the C-face of an 8 degrees off-axis 4H-SiC substrate using high temperature annealing conditions with a graphite cap covering the sample. The graphene sheets were found p-type doped, with mobilities varying between 1000 and 11000 cm(2/)V.s from device to device at 1.6 K. We examine the signature of weak localization and universal conductance fluctuations at weak magnetic field and we show that the phase coherence lengths extracted from the two phenomena are in satisfactory agreement.
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hal-03037526 , version 1 (03-12-2020)

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Bilal Jabakhanji, Nicolas Camara, Christophe Consejo, Benoit Jouault. Weak localization and universal conductance fluctuations on epitaxial graphene grown on the C-face of 8 degrees off-axis 4H-SiC substrates. ADVANCES IN INNOVATIVE MATERIALS AND APPLICATIONS, 2011, KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland. pp.269+, ⟨10.4028/www.scientific.net/AMR.324.269⟩. ⟨hal-03037526⟩
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