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Communication Dans Un Congrès Année : 2009

Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates

Résumé

We report a comparative investigation of Few layers graphene grown on 6H, 4H, and 3C-SiC substrates. We show that the size of the graphitic domains depends more on the < 0001 > SiC Surface orientation than the polytypism.
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Dates et versions

hal-03037530 , version 1 (03-12-2020)

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N. Camara, J. R. Huntzinger, Antoine Tiberj, G. Rius, Benoit Jouault, et al.. Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates. SILICON CARBIDE AND RELATED MATERIALS 2008, 2008, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, Switzerland. pp.203-206, ⟨10.4028/www.scientific.net/MSF.615-617.203⟩. ⟨hal-03037530⟩
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