Epitaxial graphene growth and characterisation of buffer layer on SiC(0001) - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Communication Dans Un Congrès Année : 2020

Epitaxial graphene growth and characterisation of buffer layer on SiC(0001)

Jean-Roch Huntzinger
Jean-Manuel Decams
  • Fonction : Auteur
Ahmed Azmi Zahab
  • Fonction : Auteur
  • PersonId : 1005374
Benoit Jouault
Sylvie Contreras
Matthieu Paillet
  • Fonction : Auteur
  • PersonId : 1000232

Résumé

Since 2008, epitaxial graphene growth has been developed in terms of homogeneity and scale by using a 1 ATM argon pressure at high temperature (>1650°C). Until now, it still remains challenging to obtain films with different and controlled characteristics such as the number of graphene layers or the doping by tuning the growth parameters. Here, we optimized the epitaxial growth of monolayer graphene (1LG) on 4H-SiC (0001) under a low argon pressure of 10 mbar. This intermediate pressure allows growing a continued 1LG in a short process time ~1h30. First, we discuss the initial growth stages from buffer layer (BL) to 1LG as a function of annealing temperature (same heating rate). The combined Raman spectroscopy and AFM analyses show that a BL, fully covering the Si-face of SiC, forms as the first step of growth. Subsequently, 1LG starts to grow at step edges and continue to cover the BL on terraces with a step-flow growth mechanism, as demonstrated in Fig.1. Then, we investigate the structural and electronic properties of the 1LG films. The integrated intensity of G-band in Raman spectra normalized with respect to a HOPG reference, AG/AG-HOPG, of each spectrum in Raman map of our continued graphene film is very close to the experimental value reported for a 1LG, demonstrating the good homogeneity. Regarding transport measurement, quantum Hall plateau values observed in our graphene layers confirmed both continuity and thickness of the 1LG film.
abstract_discussionlavoisier_landois.pdf (131.16 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03040807 , version 1 (04-12-2020)

Identifiants

  • HAL Id : hal-03040807 , version 1

Citer

Tianlin Wang, Jean-Roch Huntzinger, Jean-Manuel Decams, Maxime Bayle, Ahmed Azmi Zahab, et al.. Epitaxial graphene growth and characterisation of buffer layer on SiC(0001). 2D materials on substrates: growth & properties, Jan 2020, Villard de Lans, France. ⟨hal-03040807⟩
73 Consultations
41 Téléchargements

Partager

Gmail Facebook X LinkedIn More