Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue Photonics Année : 2020

Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector

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In this paper, a full set of structural, optical and electrical characterizations performed on midwave infrared barrier detectors based on a Ga-free InAs/InAsSb type-II superlattice, grown by molecular beam epitaxy (MBE) on a GaSb substrate, are reported and analyzed. a Minority carrier lifetime value equal to 1 µs at 80 K, carried out on dedicated structure showing photoluminescence peak position at 4.9 µm, is extracted from a time resolved photoluminescence measurement. Dark current density as low as 3.2 × 10−5 A/cm2 at 150 K is reported on the corresponding device exhibiting a 50% cut-off wavelength around 5 µm. A performance analysis through normalized spectral response and dark current density-voltage characteristics was performed to determine both the operating bias and the different dark current regimes.
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hal-03042916 , version 1 (27-05-2021)

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Ulises Zavala-Moran, Maxime Bouschet, Jean-Philippe Perez, Rodolphe Alchaar, Sylvie Bernhardt, et al.. Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector. Photonics, 2020, 7 (3), pp.76. ⟨10.3390/photonics7030076⟩. ⟨hal-03042916⟩
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