Room-temperature ferroelectric switching of spin-to-charge conversion in GeTe - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue Nature Electronics Année : 2021

Room-temperature ferroelectric switching of spin-to-charge conversion in GeTe

Laurent Vila

Résumé

Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge interconversion, its control by electric fields is volatile. Ferroelectric Rashba semiconductors stand as appealing materials unifying semiconductivity, large spin-orbit coupling, and non-volatility endowed by ferroelectricity. However, their potential for spintronics has been little explored. Here, we demonstrate the non-volatile, ferroelectric control of spin-to-charge conversion at room temperature in epitaxial GeTe films. We show that ferroelectric switching by electrical gating is possible in GeTe despite its high carrier density. We reveal a spin-to-charge conversion as effective as in Pt, but whose sign is controlled by the orientation of the ferroelectric polarization. The comparison between theoretical and experimental data suggests that spin Hall effect plays a major role for switchable conversion. These results open a route towards devices combining spin-based logic and memory integrated into a silicon-compatible material.

Dates et versions

hal-03188292 , version 1 (01-04-2021)

Identifiants

Citer

Sara Varotto, Luca Nessi, Stefano Cecchi, Jagoda Sławińska, Paul Noël, et al.. Room-temperature ferroelectric switching of spin-to-charge conversion in GeTe. Nature Electronics, 2021, ⟨10.1038/s41928-021-00653-2⟩. ⟨hal-03188292⟩
184 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More