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Article Dans Une Revue ACS Nano Année : 2021

Hexagonal Boron Nitride Crystal Growth from Iron, a Single Component Flux

Résumé

The highest quality hexagonal boron nitride (hBN) crystals are grown from molten solutions. For hBN crystal growth at atmospheric pressure, typically the solvent is a combination of two metals, one with a high boron solubility and the other to promote nitrogen solubility. In this study, we demonstrate that high-quality hBN crystals can be grown at atmospheric pressure using pure iron as a flux. The ability to produce excellent-quality hBN crystals using pure iron as a solvent is unexpected, given its low solubility for nitrogen. The properties of crystals produced with this flux matched the best values ever reported for hBN: a narrow Raman E2g vibration peak (7.6 cm–1) and strong phonon-assisted peaks in the photoluminescence spectra. To further test their quality, the hBN crytals were used as a substrate for WSe2 epitaxy. WSe2 was deposited with a low nucleation density, indicating the low defect density of the hBN. Lastly, the carrier tunneling through our hBN thin layers (3.5 nm) follows the Fowler–Nordheim model, with a barrier height of 3.7 eV, demonstrating hBN’s superior electrical insulating properties. This ability to produce high-quality hBN crystals in such a simple, environmentally friendly and economical process will advance two-dimensional material research by enabling integrated devices.
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Dates et versions

hal-03282908 , version 1 (09-07-2021)

Identifiants

Citer

Jiahan Li, Junyong Wang, Xiaotian Zhang, Christine Elias, Gaihua Ye, et al.. Hexagonal Boron Nitride Crystal Growth from Iron, a Single Component Flux. ACS Nano, 2021, 15 (4), pp.7032-7039. ⟨10.1021/acsnano.1c00115⟩. ⟨hal-03282908⟩
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