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Article Dans Une Revue IEEE Transactions on Terahertz Science and Technology Année : 2017

Generation of mW level in the 300-GHz band using resonant-cavity-enhanced unitraveling carrier photodiodes

Fabio Pavanello

Résumé

We present a resonant-cavity-enhanced broadband unitraveling carrier photodiode optimized for terahertz (THz) generation. It uses a novel semitransparent top-contact utilizing subwavelength apertures for enhanced optical transmission. The contact allows front-side illumination of the photodiode using 1.55-mu m-wavelength light, while still retaining a small contact resistance suitable for photomixing at THz frequencies. The responsivity of the device is improved by introducing a metallic mirror below the diode mesa through wafer bonding, producing an optical resonant cavity. A record continuous-wave output power of 750 mu W is measured for a single photodiode at 300 GHz. Record values of efficiency are also demonstrated.
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Dates et versions

hal-03286186 , version 1 (13-07-2021)

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Philipp Latzel, Fabio Pavanello, Maximilien Billet, Sara Bretin, Alexandre Beck, et al.. Generation of mW level in the 300-GHz band using resonant-cavity-enhanced unitraveling carrier photodiodes. IEEE Transactions on Terahertz Science and Technology, 2017, 7 (6), pp.800-807. ⟨10.1109/TTHZ.2017.2756059⟩. ⟨hal-03286186⟩
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