Direct growth of III-V nanowire-based top cell for tandem on Silicon - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Communication Dans Un Congrès Année : 2020

Direct growth of III-V nanowire-based top cell for tandem on Silicon

Résumé

We grow and characterize solar cells based on Gacatalyzed GaAs NWs radial p-in homojunctions grown by Molecular Beam Epitaxy onto inactive p-type Si(111) substrates. The solar cells feature a relatively low efficiency of 2.09% mainly due to poor VOC=0.39V, FF=0.4. To assess the intrinsic quality of the GaAs NWs, we use a hyperspectral imager to determine the absolute luminescence of GaAs homojunction devices. Between 5 suns and 130 suns illumination, we find an ideality factor of 2.2 and 1.4 from J-V curves and Jsc-PL curves, respectively. Moreover, the quasi-Fermi level splitting ΔεF, which represents the maximum achievable VOC, is tentatively extracted from the absolute luminescence and is estimated to be above 0.8 V at 1 sun. It confirms the NWs high crystalline quality and indicates a considerable scope for improvement in device processing.
Fichier principal
Vignette du fichier
Proceeding - Direct growth of III-V nanowire-based top cell for tandem on Silicon_v2 .pdf (636.24 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03328688 , version 1 (30-08-2021)

Identifiants

Citer

Romaric de Lépinau, Capucine Tong, Andrea Scaccabarozzi, Fabrice Oehler, Hung-Ling Chen, et al.. Direct growth of III-V nanowire-based top cell for tandem on Silicon. 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), Aug 2020, Calgary (virtual), Canada. ⟨10.1109/PVSC45281.2020.9300864⟩. ⟨hal-03328688⟩
40 Consultations
42 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More