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Article Dans Une Revue Journal of Physical Chemistry C Année : 2020

Stimulated Raman scattering in Ge nanowires

Résumé

Investigating group-IV-based photonic components is a very active area of research with extensive interest in developing complementary metal-oxide-semiconductor (CMOS) compatible light sources. However, due to the indirect band gap of these materials, effective light-emitting diodes and lasers based on pure Ge or Si cannot be realized. In this context, there is considerable interest in developing group-IV based Raman lasers. Nevertheless, the low quantum yield of stimulated Raman scattering in Si and Ge requires large device footprints and high lasing thresholds. Consequently, the fabrication of integrated, energy-efficient Raman lasers is challenging. Here, we report the systematic investigation of stimulated Raman scattering (SRS) in Ge nanowires (NWs) and axial Al-Ge-Al NW heterostructures with Ge segments that come into contact with self-aligned Al leads with abrupt metal–semiconductor interfaces. Depending on their geometry, these quasi-one-dimensional (1D) heterostructures can reassemble into Ge nanowires, Ge nanodots, or Ge nanodiscs, which are monolithically integrated within monocrystalline Al (c-Al) mirrors that promote both optical confinement and effective heat dissipation. Optical mode resonances in these nanocavities support in SRS thresholds as low as 60 kW/cm$^2$. Most notably, our findings provide a platform for elucidating the high potential of future monolithically integrated, nanoscale low-power group-IV-based Raman lasers.
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Dates et versions

hal-03429101 , version 1 (15-11-2021)

Identifiants

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Masiar Sistani, Maximilian G Bartmann, Nicholas A Güsken, Rupert F Oulton, Hamid Keshmiri, et al.. Stimulated Raman scattering in Ge nanowires. Journal of Physical Chemistry C, 2020, 124 (25), pp.13872-13877. ⟨10.1021/acs.jpcc.0c02602⟩. ⟨hal-03429101⟩
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