Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon - CNRS - Centre national de la recherche scientifique Access content directly
Journal Articles Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Year : 2012

Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon

M. Raine
  • Function : Author
J.-E. Sauvestre
  • Function : Author
M. Gaillardin
  • Function : Author
P. Paillet
  • Function : Author
Not file

Dates and versions

hal-03440042 , version 1 (22-11-2021)

Identifiers

Cite

Audrey Valentin, M. Raine, J.-E. Sauvestre, M. Gaillardin, P. Paillet. Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012, 288, pp.66-73. ⟨10.1016/j.nimb.2012.07.028⟩. ⟨hal-03440042⟩
17 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More