Influence of phosphorus on the growth and the photoluminescence properties of Si-NCs formed in P-doped SiO/SiO 2 multilayers - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue Nanoscale Année : 2021

Influence of phosphorus on the growth and the photoluminescence properties of Si-NCs formed in P-doped SiO/SiO 2 multilayers

Fatme Trad
  • Fonction : Auteur
Xavier Devaux
Mathieu Stoffel
Rémi Demoulin
Philippe Pareige
Etienne Talbot
Michel Vergnat
Hervé Rinnert

Résumé

This work reports on the influence of phosphorous atoms on the phase separation process and optical properties of silicon nanocrystals (Si-NCs) embedded in phosphorus doped SiO/SiO 2 multilayers. Doped SiO/SiO 2 multilayers with different P contents have been prepared by coevaporation and subsequently annealed at different temperatures up to 1100 °C. The sample structure and the localization of P atoms were both studied at the nanoscale by scanning transmission electron microscopy and atom probe tomography. It is found that P incorporation modifies the mechanism of Si-NC growth by promoting the phase separation during the postgrowth-annealing step, leading to nanocrystals formation at lower annealing temperatures as Page 38 of 72 Nanoscale compared to undoped Si-NCs. Hence, the maximum of Si-NC related photoluminescence (PL) intensity is achieved for annealing temperatures lower than 900 °C. It is also demonstrated that the Si-NCs mean size increases in the presence of P, which is accompanied by a redshift of the Si-NC related emission. The influence of the phosphorus content on the PL properties is studied using both room temperature and low temperature measurements. It is shown that for a P content lower than about 0.1 at. %, P atoms contribute to significantly improve the PL intensity. This effect is attributed to the P-induced-reduction of the number of non-radiative defects at the interface between Si-NCs and SiO 2 matrix, which is discussed in comparison with hydrogen passivation of Si-NCs. In contrast, for increasing P contents, the PL intensity strongly decreases, which is explained by the growth of Si-NCs reaching sizes that are too large to ensure quantum confinement and to the localization of P atoms inside Si-NCs.
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Dates et versions

hal-03457250 , version 1 (30-11-2021)

Identifiants

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Fatme Trad, Alaa E Giba, Xavier Devaux, Mathieu Stoffel, Denis Zhigunov, et al.. Influence of phosphorus on the growth and the photoluminescence properties of Si-NCs formed in P-doped SiO/SiO 2 multilayers. Nanoscale, 2021, ⟨10.1039/D1NR04765E⟩. ⟨hal-03457250⟩
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