Electro-optical characterizations to study minority carrier transport in Ga-free InAs/InAsSb T2SL XBn midwave infrared photodetector - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Communication Dans Un Congrès Année : 2021

Electro-optical characterizations to study minority carrier transport in Ga-free InAs/InAsSb T2SL XBn midwave infrared photodetector

Résumé

In this communication, we report on electrical and electro-optical characterizations of InAs/InAsSb Type-II superlattice (T2SL) MWIR photodetector, showing a cut-off wavelength at 5 μm. The device, made of a barrier structure in XBn configuration, was grown by molecular beam epitaxy (MBE) on GaSb substrate. At 150K, dark current measurements shows a device in the Shockley-Read-Hall (SRH) regime but with an absolute value comparable to the state-of-the-art. A quantum efficiency of 50% at the wavelength of 3 μm for a 3 μm thick absorption layer is found in simple pass configuration and front-side illumination. Combined with lifetime measurements performed on dedicated samples through time resolved photoluminescence (TRPL) technique, mobility is extracted from these measurements by using a theoretical calculation of the quantum efficiency thanks to Hovel's equations. Such an approach helps us to better understand the hole minority carrier transport in Ga-free T2SL MWIR XBn detector and therefore to improve its performance.
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Dates et versions

hal-03469716 , version 1 (10-03-2022)

Identifiants

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Vignesh Arounassalame, Maxime Bouschet, Rodolphe Alchaar, A. Ramiandrasoa, Sylvie Bernhardt, et al.. Electro-optical characterizations to study minority carrier transport in Ga-free InAs/InAsSb T2SL XBn midwave infrared photodetector. SPIE Security + Defence, Sep 2021, Madrid (Online Only), Spain. pp.4, ⟨10.1117/12.2598159⟩. ⟨hal-03469716⟩
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