Wafer-scale van der Waals Epitaxy of III-Nitride Devices on h-BN-An Overview of 2D/3D Epitaxy, Device Fabrication, Mechanical Release-Transfer Methods and Device Performances - Archive ouverte HAL Access content directly
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Wafer-scale van der Waals Epitaxy of III-Nitride Devices on h-BN-An Overview of 2D/3D Epitaxy, Device Fabrication, Mechanical Release-Transfer Methods and Device Performances

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hal-03477832 , version 1 (13-12-2021)

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  • HAL Id : hal-03477832 , version 1

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Abdallah Ougazzaden, Suresh Sundaram, Thi Quynh Phuong Vuong, Soufiane Karrakchou, Adama Mballo, et al.. Wafer-scale van der Waals Epitaxy of III-Nitride Devices on h-BN-An Overview of 2D/3D Epitaxy, Device Fabrication, Mechanical Release-Transfer Methods and Device Performances. MRS 2021, Dec 2021, Boston, United States. ⟨hal-03477832⟩
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