Wafer-scale van der Waals Epitaxy of III-Nitride Devices on h-BN-An Overview of 2D/3D Epitaxy, Device Fabrication, Mechanical Release-Transfer Methods and Device Performances - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Communication Dans Un Congrès Année : 2021

Wafer-scale van der Waals Epitaxy of III-Nitride Devices on h-BN-An Overview of 2D/3D Epitaxy, Device Fabrication, Mechanical Release-Transfer Methods and Device Performances

Fichier non déposé

Dates et versions

hal-03477832 , version 1 (13-12-2021)

Identifiants

  • HAL Id : hal-03477832 , version 1

Citer

Abdallah Ougazzaden, Suresh Sundaram, Thi Quynh Phuong Vuong, Soufiane Karrakchou, Adama Mballo, et al.. Wafer-scale van der Waals Epitaxy of III-Nitride Devices on h-BN-An Overview of 2D/3D Epitaxy, Device Fabrication, Mechanical Release-Transfer Methods and Device Performances. MRS 2021, Dec 2021, Boston, United States. ⟨hal-03477832⟩
53 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More