@article{malletdida:hal-03617195, TITLE = {{The low temperature limit of the excitonic Mott density in GaN: an experimental reassessment}}, AUTHOR = {Mallet-Dida, L{\'e}o and Disseix, Pierre and R{\'e}veret, Fran{\c c}ois and M{\'e}dard, Fran{\c c}ois and Alloing, Blandine and Z{\'u}{\~n}iga-P{\'e}rez, Jes{\'u}s and Leymarie, Jo{\"e}l}, URL = {https://cnrs.hal.science/hal-03617195}, JOURNAL = {{New Journal of Physics}}, PUBLISHER = {{Institute of Physics: Open Access Journals}}, VOLUME = {24}, PAGES = {033031}, YEAR = {2022}, DOI = {10.1088/1367-2630/ac58b9}, KEYWORDS = {excitonic Mott transition ; semiconductors ; GaN ; spectroscopy ; time-resolved photoluminescence ; photo-carrier generation ; cryogenic temperature}, PDF = {https://cnrs.hal.science/hal-03617195/file/Mallet-Dida_2022_New_J._Phys._24_033031.pdf}, HAL_ID = {hal-03617195}, HAL_VERSION = {v1}, }