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Article Dans Une Revue IEEE Photonics Journal Année : 2022

Analysis of the Optical Coupling Between GaSb Diode Lasers and Passive Waveguides: A Step Toward Monolithic Integration on Si Platforms

Résumé

We simulate the optical coupling between 2.3 µm GaSb-based diode lasers (DLs) epitaxially grown on on-axis silicon (001) and passive waveguides in the butt-coupling geometry. 3D FDTD simulations reveal how the optical coupling is affected by the air gap between the laser cavity and the waveguide that arises from the laser etched-facet definition. We also model alternative approaches consisting in filling the gap with higher-refractive index materials transparent in the mid-infrared window. Finally, because of their fabrication flexibility, we propose to implement polymeric waveguides in order to achieve improved coupling performances.
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Dates et versions

hal-03779758 , version 1 (17-09-2022)

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Michele Paparella, Laura Monge Bartolome, Jean-Baptiste Rodriguez, Laurent Cerutti, Marco Grande, et al.. Analysis of the Optical Coupling Between GaSb Diode Lasers and Passive Waveguides: A Step Toward Monolithic Integration on Si Platforms. IEEE Photonics Journal, 2022, 14, pp.6651206. ⟨10.1109/jphot.2022.3203593⟩. ⟨hal-03779758⟩
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