Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and Simulations - Archive ouverte HAL Access content directly
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hal-03793958 , version 1 (18-11-2022)

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Yanjie Shao, Marco G. Pala, David Esseni, Jesus del Alamo. Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and Simulations. 2021 IEEE 67th International Electron Devices Meeting (IEDM), Dec 2021, San Francisco, United States. pp.32.1.1-32.1.4, ⟨10.1109/IEDM19574.2021.9720540⟩. ⟨hal-03793958⟩
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