Temperature Dependence Study of Electrical and Electro-Optical Performances of Midwave Infrared Ga-Free T2SL Barrier Photodetector - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue Applied Sciences Année : 2022

Temperature Dependence Study of Electrical and Electro-Optical Performances of Midwave Infrared Ga-Free T2SL Barrier Photodetector

Résumé

In this paper, we report on temperature dependence performances of a midwave infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) barrier (XBn) photodetector grown by molecular beam epitaxy on n-type GaSb substrate. The T2SL structure, with a 3 µm thick active region, was processed in a mesa device in order to perform dark current measurements and spectral photoresponse as a function of temperature. Analyses of these temperature dependence characterizations help us to improve the design of Ga-free T2SL MWIR XBn detectors.
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Origine : Fichiers éditeurs autorisés sur une archive ouverte
Licence : CC BY - Paternité
Origine : Fichiers éditeurs autorisés sur une archive ouverte
Licence : CC BY - Paternité

Dates et versions

hal-03827540 , version 1 (17-05-2023)

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Maxime Bouschet, Vignesh Arounassalame, Anthony Ramiandrasoa, Isabelle Ribet-Mohamed, Jean-Philippe Perez, et al.. Temperature Dependence Study of Electrical and Electro-Optical Performances of Midwave Infrared Ga-Free T2SL Barrier Photodetector. Applied Sciences, 2022, 12 (20), pp.10358. ⟨10.3390/app122010358⟩. ⟨hal-03827540⟩
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