Journal Articles
Semiconductor Science and Technology
Year : 2016
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https://cnrs.hal.science/hal-03878824
Submitted on : Wednesday, November 30, 2022-9:31:32 AM
Last modification on : Friday, March 24, 2023-2:53:29 PM
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- HAL Id : hal-03878824 , version 1
- DOI : 10.1088/0268-1242/31/4/045008
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Wahid Khalfaoui, T Oheix, F Cayrel, R Benoit, A Yvon, et al.. Gallium nitride surface protection during RTA annealing with a GaO x N y cap-layer. Semiconductor Science and Technology, 2016, 31 (4), pp.045008. ⟨10.1088/0268-1242/31/4/045008⟩. ⟨hal-03878824⟩
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