@article{khalfaoui:hal-03878824, TITLE = {{Gallium nitride surface protection during RTA annealing with a GaO x N y cap-layer}}, AUTHOR = {Khalfaoui, Wahid and Oheix, T and Cayrel, F and Benoit, R and Yvon, A and Collard, E and Alquier, D}, URL = {https://cnrs.hal.science/hal-03878824}, JOURNAL = {{Semiconductor Science and Technology}}, PUBLISHER = {{IOP Publishing}}, VOLUME = {31}, NUMBER = {4}, PAGES = {045008}, YEAR = {2016}, MONTH = Apr, DOI = {10.1088/0268-1242/31/4/045008}, HAL_ID = {hal-03878824}, HAL_VERSION = {v1}, }