Study on plasma immersion ion implantation and laser annealing for sulphur hyperdoped black silicon - CNRS - Centre national de la recherche scientifique
Conference Papers Year : 2016

Study on plasma immersion ion implantation and laser annealing for sulphur hyperdoped black silicon

M.I. Sanchez
  • Function : Author
G. Coustillier
  • Function : Author
Y. Spiegel
  • Function : Author
T. Robert
  • Function : Author
F. Torregrosa
  • Function : Author
P. Delaporte
  • Function : Author
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Dates and versions

hal-04844175 , version 1 (17-12-2024)

Identifiers

  • HAL Id : hal-04844175 , version 1

Cite

T. Sarnet, M.I. Sanchez, G. Coustillier, Y. Spiegel, T. Robert, et al.. Study on plasma immersion ion implantation and laser annealing for sulphur hyperdoped black silicon. International High Power Laser Ablation (HPLA 2016), Claude Phipps, Apr 2016, Santa Fe (NM), United States. ⟨hal-04844175⟩
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