Study on plasma immersion ion implantation and laser annealing for sulphur hyperdoped black silicon - CNRS - Centre national de la recherche scientifique
Conference Papers Year : 2016

Study on plasma immersion ion implantation and laser annealing for sulphur hyperdoped black silicon

T. Sarnet
Aix Marseille Université
Institut CNRS-PAULI
Laboratoire Lasers, Plasmas et Procédés photoniques
CV
M.I. Sanchez
  • Function : Author
G. Coustillier
  • Function : Author
Y. Spiegel
  • Function : Author
T. Robert
  • Function : Author
F. Torregrosa
  • Function : Author
P. Delaporte
  • Function : Author

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Physics [physics]

Thierry Sarnet  : Connect in order to contact the contributor

https://cnrs.hal.science/hal-04844175

Submitted on : Tuesday, December 17, 2024-6:00:42 PM

Last modification on : Wednesday, December 18, 2024-3:20:21 AM

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hal-04844175 , version 1 (17-12-2024)

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  • HAL Id : hal-04844175 , version 1

Cite

T. Sarnet, M.I. Sanchez, G. Coustillier, Y. Spiegel, T. Robert, et al.. Study on plasma immersion ion implantation and laser annealing for sulphur hyperdoped black silicon. International High Power Laser Ablation (HPLA 2016), Claude Phipps, Apr 2016, Santa Fe (NM), United States. ⟨hal-04844175⟩

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