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authFullName_s : A Yvon

Gallium nitride surface protection during RTA annealing with a GaO x N y cap-layer

Wahid Khalfaoui , T Oheix , F Cayrel , R Benoit , A Yvon et al.
Semiconductor Science and Technology, 2016, 31 (4), pp.045008. ⟨10.1088/0268-1242/31/4/045008⟩
Journal articles hal-03878824v1
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Study and optimization of a 600V Pseudo-vertical GaN-on-silicon rectifier by finite elements simulation

A Souguir-Aouani , N. Thierry-Jebali , Dominique Tournier , A Yvon , E Collard et al.
ICSCRM 2015, Oct 2015, Giardini Naxos, Italy. pp.Mo-P-44
Conference papers hal-02138522v1