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Gallium nitride surface protection during RTA annealing with a GaO x N y cap-layerSemiconductor Science and Technology, 2016, 31 (4), pp.045008. ⟨10.1088/0268-1242/31/4/045008⟩
Journal articles
hal-03878824v1
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Study and optimization of a 600V Pseudo-vertical GaN-on-silicon rectifier by finite elements simulationICSCRM 2015, Oct 2015, Giardini Naxos, Italy. pp.Mo-P-44
Conference papers
hal-02138522v1
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