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authFullName_s : Joël Leymarie
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LO-phonon-assisted polariton lasing in a ZnO-based microcavity

Laurent Orosz , François Réveret , François Médard , Pierre Disseix , Joël Leymarie et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 85, pp.121201. ⟨10.1103/PhysRevB.85.121201⟩
Journal articles hal-00710694v1

Continuous wave and ultra-fast reflectivity studies for the determination of GaN excitonic oscillator strengths as a function of the in-plane biaxial strain

Ouloum Aoudé , Pierre Disseix , Joël Leymarie , Aime Vasson , E. Aujol et al.
Superlattices and Microstructures, 2005, 40, pp.166
Journal articles hal-00093844v1

Optical properties of InN with stoichoimetry violation and indium clustering.

T. Kav Shubina , S. Ivanov , V. Jmerik , M. Glazov , A. Kalvarskii et al.
physica status solidi (a), 2004, pp.5
Journal articles hal-00272559v1

Determination of Al2Ga1-xN refractive indexes at low and room temperature, in the 300-600 nm range, for the optimisation of GaN-based microcavities.

N. Antoine-Vincent , F. Natali , M. Mihailovic , Pierre Disseix , Aime Vasson et al.
physica status solidi (a), 2003, pp.550
Journal articles hal-00272518v1

AlN/AlGaN Bragg-reflectors for UV spectral range grown by molecular beam epitaxy on Si (111)

F. Natali , N. Antoine-Vincent , F. Semond , D. Byrne , Lionel Hirsch et al.
Japanese Journal of Applied Physics, 2002, 41, pp.1
Journal articles hal-00183529v1
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The low temperature limit of the excitonic Mott density in GaN: an experimental reassessment

Léo Mallet-Dida , Pierre Disseix , François Réveret , François Médard , Blandine Alloing et al.
New Journal of Physics, 2022, 24, pp.033031. ⟨10.1088/1367-2630/ac58b9⟩
Journal articles hal-03617195v1

Advances in the realisation of GaN-based microcavities : towards strong coupling at room temperature

Fabrice Semond , Declan Byrne , Franck Natali , Mathieu Leroux , Jean Massies et al.
Material Research Society (MRS) Fall Meeting, Dec 2002, Boston, United States. pp.613
Conference papers hal-03942835v1

Guided polaritons in a GaN planar waveguide

Thierry Guillet , Christelle Brimont , Laetitia Doyennette , François Réveret , Pierre Disseix et al.
34th International Conference on the Physics of Semiconductors (ICPS), Jul 2018, Montpellier, France
Conference papers hal-01951866v1

Circumventing the miscibility gap in InGaN nanowires emitting from blue to red

Elissa Roche , Yamina Andre , Geoffrey Avit , Catherine Bougerol , Dominique Castelluci et al.
Nanotechnology, 2018, 29 (46), pp.465602. ⟨10.1088/1361-6528/aaddc1⟩
Journal articles hal-01913823v1

MOVPE grown periodic AlN/BAlN heterostructure with high boron content

Xiaojian Li , S. Sundaram , Y. El Gmili , F. Genty , S. Bouchoule et al.
ICMOVPE, 2015, Lausanne, Switzerland
Conference papers hal-01170572v1

Observation of Rabi splitting in a bulk GaN microcavity grown on silicon.

N. Antoine-Vincent , F. Natali , D. Byrne , Aime Vasson , Pierre Disseix et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, pp.15316
Journal articles hal-00272519v1

Strong light-matter coupling in GaN microcavities grown on silicon(111) at room temperature

I. R. Sellers , F. Semond , M. Leroux , J. Massies , A.-L. Henneghien et al.
physica status solidi (b), 2006, 243, pp.1639
Journal articles hal-00090382v1
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Delay and distortion of slow light pulses by excitons in ZnO

T. V. Shubina , M.M. Glasov , Nikolay A. Gippius , A.A. Toropov , David Lagarde et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84, pp.075202. ⟨10.1103/PhysRevB.84.075202⟩
Journal articles hal-00633626v1

Croissance et caractérisation de microcavités à base de nitrures III-V sur substrat silicium

Franck Natali , N. Antoine-Vincent , Fabrice Semond , Mathieu Leroux , Jean Massies et al.
Journées Thématiques “Nitrures” du GDR “Semiconducteurs à large bande interdite”, May 2001, Grenoble, France
Conference papers hal-03943433v1

Hybrid perovskites from a solid state physics perspective

Laurent Pedesseau , Mikael Kepenekian , Daniel Sapori , Claudine Katan , Gaetan Lanty et al.
European Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France
Conference papers hal-01403374v1

Optoelectronic Properties of Hybrid Perovskites : Theoretical and Experimental Results

Jacky Even , Laurent Pedesseau , Daniel Sapori , Gaëtan Lanty , Katia Abdelbaki et al.
Congrès 2015 de la Société Chimique de France (SCF'15), Jul 2015, Lille, France
Conference papers hal-01162200v1

Defect-free InGaN nanowires on silicon whatever the indium composition

Mohammed Zeghouane , Elissa Roche , Geoffrey Avit , Yamina Andre , Catherine Bougerol et al.
RÉUNION PLÉNIÈRE DU GDR PULSE 2017, Oct 2017, Paris, France
Conference poster hal-01659715v1
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Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation

Yamina André , Nebile Isik Goktas , Guillaume Monier , Hadi Hijazi , Hussein Mehdi et al.
Nano Express, 2020, 1 (2), pp.020019. ⟨10.1088/2632-959X/aba7f1⟩
Journal articles hal-02997616v1

Polariton lasing in a hybrid bulk ZnO microcavity

Thierry Guillet , Meletios Mexis , J. Levrat , G. Rossbach , Christelle Brimont et al.
Applied Physics Letters, 2011, 99, pp.161104. ⟨10.1063/1.3650268⟩
Journal articles hal-00633265v1
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Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers

Jesús Zúñiga-Pérez , E. Mallet , Rereao Hahe , M.J. Rashid , Sophie Bouchoule et al.
Applied Physics Letters, 2014, 104, pp.241113. ⟨10.1063/1.4884120⟩
Journal articles hal-01131005v1

Microcavités à base de GaN : le couplage fort à température ambiante

Fabrice Semond , Franck Natali , Declan Byrne , Ian Sellers , Mathieu Leroux et al.
5ème Journées Nationales Nano-Technologies, Oct 2004, Cassis, France
Conference papers hal-03943488v1

Growth and caracterisation of GaN-based microcavities

Franck Natali , N. Antoine-Vincent , Fabrice Semond , Mathieu Leroux , Jean Massies et al.
International Workshop on the Physics of Light-Matter Coupling in Nitrides (PLMCN-1), Sep 2001, Rome, Italy
Conference papers hal-03942799v1

Determination of the refractive indexes of AlN, GaN and AlxGa1-xN grown on (III) Si substrates.

N. Antoine-Vincent , Joël Leymarie , F. Natali , M. Mihailovic , Aime Vasson et al.
Journal of Applied Physics, 2003, pp.5226
Journal articles hal-00272613v1

Spectroscopy of a bulk microcavity grown on Si (111).

F. Nataly , D. Byrne , M. Mihailovic , A. Vasson , Joël Leymarie et al.
Japanese Journal of Applied Physics, 2005, 44 (1), pp.4902-4908. ⟨10.1143/JJAP.44.4902⟩
Journal articles hal-00272585v1

Spectroscopy of a Bulk GaN Microcavity Grown on Si(111)

N. Ollier , F. Natali , D. Byrne , Pierre Disseix , M. Mihailovic et al.
Applied Physics Letters, 2005, pp.7
Journal articles hal-00272604v1
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Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature

Stéphane Faure , Christelle Brimont , Thierry Guillet , T. Bretagnon , B. Gil et al.
Applied Physics Letters, 2009, 95 (12), pp.121102. ⟨10.1063/1.3232228⟩
Journal articles hal-00388499v2
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AlGaN-based MQWs emitting at 280nm for Vertical Cavity Surface Emitting Lasers

Gaëlle Le Gac , Xin Li , Suresh Sundaram , Youssef El Gmili , Tarik Moudakir et al.
Conference on Lasers and Electro-Optics, Jun 2015, Munich, Germany
Conference papers hal-01257060v1

Propagation of polaritons in GaN waveguides up to 300K

Christelle Brimont , Thierry Guillet , Laetitia Doyennette , François Réveret , Pierre Disseix et al.
International Workshop on Nitride Semiconductors 2018 (IWN 2018), Nov 2018, Kanazawa, Japan
Conference papers hal-01952488v1

Potentialities of GaN-based microcavities in strong coupling regime at room temperature.

N. Ollier , F. Natali , D. Byrne , Pierre Disseix , A. Vasson et al.
Superlattices and Microstructures, 2004, 34 (4-6), pp.599-606. ⟨10.1016/j.spmi.2004.09.017⟩
Journal articles istex hal-00272554v1

Modélisation et caractérisation de microcavités à base de GaN

N. Antoine-Vincent , Franck Natali , Pierre Disseix , Martine Mihailovic , Aime Vasson et al.
Journées Thématiques “Nitrures” du GDR “Semiconducteurs à large bande interdite”, May 2001, Grenoble, France
Conference papers hal-03943284v1