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authFullName_s : Sandra Ruffenach

The influence of thermal annealing on optical and electrical properties indium nitride films grown by MOVPE

Sandra Ruffenach
SPIE Photonics West Opto, Jan 2010, San Francisco, United States
Conference papers hal-00809370v1

Indium Nitride Layer production

Bernard Gil , Olivier Briot , Sandra Ruffenach , B. Maleyre , Thierry Cloitre et al.
N° de brevet: JP2008513327. 2008
Patents hal-00390338v1

Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells

Sergey S. Krishtopenko , A. V. Ikonnikov , K. V. Maremyanin , L. S. Bovkun , K. E. Spirin et al.
Fizika i tekhnika poluprovodnicov / Semiconductors, 2017, 51 (1), pp.38-42. ⟨10.1134/S1063782617010109⟩
Journal articles hal-01523220v1

Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties

Matthieu Moret , Sandra Ruffenach , Olivier Briot , B. Gil
European Physical Journal: Applied Physics, 2009, 45 (2), pp.20305
Journal articles hal-00390126v1

Method for the growth of Indium nitride

Sandra Ruffenach , Olivier Briot , Bernard Gil
N° de brevet: WO2008009805. 2008
Patents hal-00390341v1

Optical investigations on si-doped InN films

B. Maleyre , Olivier Briot , Sandra Ruffenach , Bernard Gil
7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2004, Montpellier (FRANCE), France. pp.1379-1383
Conference papers hal-00540416v1

Growth of InN quantum dots by MOVPE

Sandra Ruffenach , Benedicte Maleyre , Olivier Briot , Bernard Gil
4th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN4), Jun 2004, St Petersburg (RUSSIA), Russia. pp.826-832
Conference papers hal-00540424v1

Characterization of the blue emission of Tm/Er co-implanted GaN

I. S. Roqan , C. Trager-Cowan , B. Hourahine , K. Lorenz , E. Nogales et al.
Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting, Nov 2005, Boston (MA), United States. pp.599-604
Conference papers hal-00546130v1

A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN

E. Nogales , K. Lorenz , K. Wang , I.S. Roqan , Roland Martin et al.
MRS Fall Meeting - GaN, AlN, InN and Related Materials Symposium, Nov 2005, Boston, United States. pp.625
Conference papers hal-00546139v1

Phages recognizing the Indium Nitride semiconductor surface via their peptides

Elias Estephan , Marie-Belle Saab , Marta Martin-Fernandez , Christian Larroque , Frederic J. G. Cuisinier et al.
E-MRS Symposium on Peptide-based Materials - from Nanostructures to Applications, Jun 2010, Strasbourg (FRANCE), France. pp.143-147
Conference papers hal-00633883v1
Image document

Temperature-dependent magnetospectroscopy of HgTe quantum wells

A. V. Ikonnikov , Sergey S. Krishtopenko , Oleksiy Drachenko , Michel Goiran , Maksim Zholudev et al.
Physical Review B, 2016, 94 (15), pp.155421. ⟨10.1103/PhysRevB.94.155421⟩
Journal articles hal-01397638v1
Image document

Influence of crystal mosaicity on axial channeling effects and lattice site determination of impurities

B. de Vries , U. Wahl , Sandra Ruffenach , Olivier Briot , A. Vantomme et al.
Applied Physics Letters, 2013, 103 (17), pp.172108. ⟨10.1063/1.4826705⟩
Journal articles hal-00914581v1

Alternative precursors for MOVPE growth of InN and GaN at low temperature

Sandra Ruffenach , Matthieu Moret , Olivier Briot , Bernard Gil , Christoph Giesen et al.
2nd International Symposium on the growth of III-NItrides (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2791, ⟨10.1016/j.jcrysgro.2009.01.038⟩
Conference papers istex hal-00390309v1

InP Double Heterojunction Bipolar Transistor for broadband terahertz detection and imaging systems

Dominique Coquillat , V. Nodjiadjim , A. Konczykowska , Nina Diakonova , Christophe Consejo et al.
Conference papers hal-01249949v1

MOVPE growth of InN films and quantum dots

W. Maleyre , Olivier Briot , Sandra Ruffenach
1st International Workshop on Indium Nitride, Nov 2003, Fremantle (AUSTRALIA), Australia. pp.15-21
Conference papers hal-00539952v1

InN excitonic deformation potentials determined experimentally

Bernard Gil , Olivier Briot , Matthieu Moret , Sandra Ruffenach , Christoph Giesen et al.
2nd International Symposium on Growth of III-Nitrides (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2798, ⟨10.1016/j.jcrysgro.2009.01.010⟩
Conference papers istex hal-00390295v1

High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors

Dominique Coquillat , V. Nodjiadjim , S. Blin , A. Konczykowska , Nina Diakonova et al.
Conference papers hal-01555388v1

Growth and characterisation of Eu doped GaN thin films

G. Halambalakis , N. Rousseau , Olivier Briot , Sandra Ruffenach , Roger Aulombard et al.
Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.721-728
Conference papers hal-00540441v1

Indium nitride quantum dots grown by metalorganic vapor phase epitaxy

Olivier Briot , B. Maleyre , Sandra Ruffenach
Applied Physics Letters, 2003, 83, pp.2919-2921. ⟨10.1063/1.1613044⟩
Journal articles hal-00540467v1

High-temperature annealing and optical activation of Eu-implanted GaN

K. Lorenz , U. Wahl , E. Alves , S. Dalmasso , Rw Martin et al.
Applied Physics Letters, 2004, 85, pp.2712-2714. ⟨10.1063/1.1801686⟩
Journal articles hal-00539948v1

Managing gas purity in epitaxial growth

M. Succi , S. Pirola , Sandra Ruffenach , Olivier Briot
Italian Crystal Growth Conference (ICGC 2010), Nov 2010, Parme, Italy. pp.809-812, ⟨10.1002/crat.201000610⟩
Conference papers istex hal-00633875v1

MOVPE growth and characterization of polar, semipolar and nonpolar InN on sapphire substrate

Matthieu Moret , Sandra Ruffenach , Olivier Briot , Bernard Gil
ISGN3, Jul 2010, France. pp.1183-1186, ⟨10.1002/pssa.201001192⟩
Conference papers istex hal-00633882v1

Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing

E. Nogales , Rw Martin , Kp O'Donnell , K. Lorenz , E. Alves et al.
Applied Physics Letters, 2006, 88, pp.031902. ⟨10.1063/1.2162797⟩
Journal articles hal-00540370v1

Superconductivity of InN with a well defined Fermi surface

T. Inushima , N. Kato , Duncan Kennedy Maude , Hai Lu , W. J. Schaff et al.
6th International Conference on Nitride Semiconductors (ICNS-6), Aug 2005, Bremen (GERMANY), Germany. pp.1679-1686
Conference papers hal-00540403v1

Degradation of AlGaN during high-temperature annealing monitored by ultraviolet Raman scattering

M. Kuball , François Demangeot , J. Frandon , Ma Renucci , H. Sands et al.
Applied Physics Letters, 1999, 74, pp.549-551
Journal articles hal-00545869v1

Réalisation d'une couche de nitrure d'indium

Bernard Gil , Olivier Briot , Sandra Ruffenach , B. Maleyre , Thierry Cloitre et al.
N° de brevet: FR2875333. 2006
Patents hal-00390335v1

Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy

Jg Lozano , Am Sanchez , R. Garcia , D. Gonzalez , D. Araujo et al.
Applied Physics Letters, 2005, 87 (26), pp.263104. ⟨10.1063/1.2152110⟩
Journal articles hal-00390132v1

Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs "Three-Layer" Gapless Quantum Wells

Sandra Ruffenach , Sergey S. Krishtopenko , L. S. Bovkun , A. V. Ikonnikov , M. Marcinkiewicz et al.
JETP Letters, 2017, 106 (11), pp.727-732. ⟨10.1134/S0021364017230102⟩
Journal articles hal-01830516v1

Raman scattering by the longitudinal optical phonon in InN: Wave-vector nonconserving mechanisms

François Demangeot , C. Pinquier , J. Frandon , M. Gaio , Olivier Briot et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 71, pp.104305. ⟨10.1103/PhysRevB.71.104305⟩
Journal articles hal-00540408v1

The value of the direct bandgap of InN: a re-examination

Olivier Briot , Benedicte Maleyre , Sandra Ruffenach , Bernard Gil , C. Pinquier et al.
3rd International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN3), Oct 2003, Acireale (ITALY), Italy. pp.1425-1428
Conference papers hal-00540437v1