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The influence of thermal annealing on optical and electrical properties indium nitride films grown by MOVPESPIE Photonics West Opto, Jan 2010, San Francisco, United States
Conference papers
hal-00809370v1
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Indium Nitride Layer productionN° de brevet: JP2008513327. 2008
Patents
hal-00390338v1
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Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wellsFizika i tekhnika poluprovodnicov / Semiconductors, 2017, 51 (1), pp.38-42. ⟨10.1134/S1063782617010109⟩
Journal articles
hal-01523220v1
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Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence propertiesEuropean Physical Journal: Applied Physics, 2009, 45 (2), pp.20305
Journal articles
hal-00390126v1
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Method for the growth of Indium nitrideN° de brevet: WO2008009805. 2008
Patents
hal-00390341v1
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Optical investigations on si-doped InN films7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2004, Montpellier (FRANCE), France. pp.1379-1383
Conference papers
hal-00540416v1
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Growth of InN quantum dots by MOVPE4th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN4), Jun 2004, St Petersburg (RUSSIA), Russia. pp.826-832
Conference papers
hal-00540424v1
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Characterization of the blue emission of Tm/Er co-implanted GaNSymposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting, Nov 2005, Boston (MA), United States. pp.599-604
Conference papers
hal-00546130v1
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A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaNMRS Fall Meeting - GaN, AlN, InN and Related Materials Symposium, Nov 2005, Boston, United States. pp.625
Conference papers
hal-00546139v1
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Phages recognizing the Indium Nitride semiconductor surface via their peptidesE-MRS Symposium on Peptide-based Materials - from Nanostructures to Applications, Jun 2010, Strasbourg (FRANCE), France. pp.143-147
Conference papers
hal-00633883v1
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Temperature-dependent magnetospectroscopy of HgTe quantum wellsPhysical Review B, 2016, 94 (15), pp.155421. ⟨10.1103/PhysRevB.94.155421⟩
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hal-01397638v1
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Influence of crystal mosaicity on axial channeling effects and lattice site determination of impuritiesApplied Physics Letters, 2013, 103 (17), pp.172108. ⟨10.1063/1.4826705⟩
Journal articles
hal-00914581v1
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Alternative precursors for MOVPE growth of InN and GaN at low temperature2nd International Symposium on the growth of III-NItrides (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2791, ⟨10.1016/j.jcrysgro.2009.01.038⟩
Conference papers
istex
hal-00390309v1
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InP Double Heterojunction Bipolar Transistor for broadband terahertz detection and imaging systems19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19), 2015, Salamanca, Spain. pp.UNSP 012036, ⟨10.1088/1742-6596/647/1/012036⟩
Conference papers
hal-01249949v1
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MOVPE growth of InN films and quantum dots1st International Workshop on Indium Nitride, Nov 2003, Fremantle (AUSTRALIA), Australia. pp.15-21
Conference papers
hal-00539952v1
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InN excitonic deformation potentials determined experimentally2nd International Symposium on Growth of III-Nitrides (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2798, ⟨10.1016/j.jcrysgro.2009.01.010⟩
Conference papers
istex
hal-00390295v1
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High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar TransistorsFUNDAMENTAL AND APPLIED PROBLEMS OF TERAHERTZ DEVICES AND TECHNOLOGIES, 2017, Sendai, Japan. pp.1-9, ⟨10.1142/S0129156416400115⟩
Conference papers
hal-01555388v1
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Growth and characterisation of Eu doped GaN thin filmsMeeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.721-728
Conference papers
hal-00540441v1
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Indium nitride quantum dots grown by metalorganic vapor phase epitaxyApplied Physics Letters, 2003, 83, pp.2919-2921. ⟨10.1063/1.1613044⟩
Journal articles
hal-00540467v1
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High-temperature annealing and optical activation of Eu-implanted GaNApplied Physics Letters, 2004, 85, pp.2712-2714. ⟨10.1063/1.1801686⟩
Journal articles
hal-00539948v1
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Managing gas purity in epitaxial growthItalian Crystal Growth Conference (ICGC 2010), Nov 2010, Parme, Italy. pp.809-812, ⟨10.1002/crat.201000610⟩
Conference papers
istex
hal-00633875v1
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MOVPE growth and characterization of polar, semipolar and nonpolar InN on sapphire substrateISGN3, Jul 2010, France. pp.1183-1186, ⟨10.1002/pssa.201001192⟩
Conference papers
istex
hal-00633882v1
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Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealingApplied Physics Letters, 2006, 88, pp.031902. ⟨10.1063/1.2162797⟩
Journal articles
hal-00540370v1
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Superconductivity of InN with a well defined Fermi surface6th International Conference on Nitride Semiconductors (ICNS-6), Aug 2005, Bremen (GERMANY), Germany. pp.1679-1686
Conference papers
hal-00540403v1
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Degradation of AlGaN during high-temperature annealing monitored by ultraviolet Raman scatteringApplied Physics Letters, 1999, 74, pp.549-551
Journal articles
hal-00545869v1
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Réalisation d'une couche de nitrure d'indiumN° de brevet: FR2875333. 2006
Patents
hal-00390335v1
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Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxyApplied Physics Letters, 2005, 87 (26), pp.263104. ⟨10.1063/1.2152110⟩
Journal articles
hal-00390132v1
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Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs "Three-Layer" Gapless Quantum WellsJETP Letters, 2017, 106 (11), pp.727-732. ⟨10.1134/S0021364017230102⟩
Journal articles
hal-01830516v1
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Raman scattering by the longitudinal optical phonon in InN: Wave-vector nonconserving mechanismsPhysical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 71, pp.104305. ⟨10.1103/PhysRevB.71.104305⟩
Journal articles
hal-00540408v1
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The value of the direct bandgap of InN: a re-examination3rd International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN3), Oct 2003, Acireale (ITALY), Italy. pp.1425-1428
Conference papers
hal-00540437v1
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