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authFullName_s : T. Haffner,
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Improvement of the electrical performance of Au/Ti/HfO 2 /Ge 0.9 Sn 0.1 p-MOS capacitors by using interfacial layers

T. Haffner, , M.A. Mahjoub, , S. Labau, , J. Aubin, , J.M. Hartmann, et al.
Applied Physics Letters, 2019, 115 (17), pp.171601. ⟨10.1063/1.5121474⟩
Journal articles hal-03027755v1