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authFullName_s : Wahid Khalfaoui

Gallium nitride surface protection during RTA annealing with a GaO x N y cap-layer

Wahid Khalfaoui , T Oheix , F Cayrel , R Benoit , A Yvon et al.
Semiconductor Science and Technology, 2016, 31 (4), pp.045008. ⟨10.1088/0268-1242/31/4/045008⟩
Journal articles hal-03878824v1

Surface State of GaN after Rapid-Thermal-Annealing Using AlN Cap-Layer

Georgio El-Zammar , Wahid Khalfaoui , Thomas Oheix , Arnaud Yvon , Emmanuel Collard et al.
Applied Surface Science, 2015, 355, pp.1044-1050. ⟨10.1016/j.apsusc.2015.07.201⟩
Journal articles hal-01784768v1

Impact of rapid thermal annealing on Mg-implanted GaN with a SiO x /AlN cap-layer

Wahid Khalfaoui , Thomas Oheix , Georgio El-Zammar , Roland Benoit , Frédéric Cayrel et al.
physica status solidi (a), 2017, 214 (4), ⟨10.1002/pssa.201600438⟩
Journal articles hal-01721021v1

A simple non-recessed and Au-free high quality Ohmic contacts on AlGaN/GaN: The case of Ti/Al alloy

Georgio El-Zammar , Arnaud Yvon , Wahid Khalfaoui , Maher Nafouti , Frédéric Cayrel et al.
Materials Science in Semiconductor Processing, 2018, 78, pp.107-110. ⟨10.1016/j.mssp.2017.11.021⟩
Journal articles hal-02140135v1