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Gallium nitride surface protection during RTA annealing with a GaO x N y cap-layerSemiconductor Science and Technology, 2016, 31 (4), pp.045008. ⟨10.1088/0268-1242/31/4/045008⟩
Journal articles
hal-03878824v1
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Surface State of GaN after Rapid-Thermal-Annealing Using AlN Cap-LayerApplied Surface Science, 2015, 355, pp.1044-1050. ⟨10.1016/j.apsusc.2015.07.201⟩
Journal articles
hal-01784768v1
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Impact of rapid thermal annealing on Mg-implanted GaN with a SiO x /AlN cap-layerphysica status solidi (a), 2017, 214 (4), ⟨10.1002/pssa.201600438⟩
Journal articles
hal-01721021v1
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A simple non-recessed and Au-free high quality Ohmic contacts on AlGaN/GaN: The case of Ti/Al alloyMaterials Science in Semiconductor Processing, 2018, 78, pp.107-110. ⟨10.1016/j.mssp.2017.11.021⟩
Journal articles
hal-02140135v1
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