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Epitaxial growth and materials characterization of single crystalline boron rich B(AI)N ternary alloys
Thi Quynh Phuong Vuong
,
Adama Mballo
,
Suresh Sundaram
,
Gilles Patriarche
,
Yacine Halfaya
et al.
MRS 2021, Dec 2021, Boston, United States
Conference papers
hal-03477839v1
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A Highly Porous and Conductive Composite Gate Electrode for NO, NO2, O2, H2 and NH3 Exhaust Gas Sensors
Hassane Ouazzani Chahdi
,
Omar Helli
,
Nour Eddine Bourzgui
,
Leo Breuil
,
David Danovich
et al.
Conference papers
hal-02879903v1
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Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors
Chris Bishop
,
Jean-Paul Salvestrini
,
Yacine Halfaya
,
Sundaram Suresh
,
Youssef El Gmili
et al.
Journal articles
hal-01170536v1
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Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT
Chris Bishop
,
Yacine Halfaya
,
Ali Soltani
,
Suresh Sundaram
,
Xin Li
et al.
Journal articles
hal-02385234v1
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MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates
Suresh Sundaram
,
Xin Li
,
Saiful Alam
,
Taha Ayari
,
Yacine Halfaya
et al.
Journal articles
hal-02282679v1
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Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride
Suresh Sundaram
,
Xin Li
,
Yacine Halfaya
,
Taha Ayari
,
Gilles Patriarche
et al.
Journal articles
hal-02160835v1
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Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019)
Taha Ayari
,
Suresh Sundaram
,
Chris Bishop
,
Adama Mballo
,
Phuong Vuong
et al.
Journal articles
hal-02321646v1
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Capteur de détection de gaz d'un composant d'un gaz
Laetitia Pradere
,
Yacine Halfaya
,
Abdallah Ougazzaden
,
Paul L Voss
,
Jean-Paul Salvestrini
et al.
France, N° de brevet: FR 1462278 2014. 2015
Patents
hal-01281130v1
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Optimisation, fabrication et caractérisation d’un capteur de gaz à base d’hétérostructure AlGaN/GaN HEMT pour des applications automobiles
Yacine Halfaya
Science des matériaux [cond-mat.mtrl-sci]. Université de Lorraine, 2016. Français. ⟨NNT : 2016LORR0312⟩
Theses
tel-02985765v1
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Impact of the Sensor Temperature on Low Acetone Concentration Detection Using AlGaN/GaN HEMTs
Ali Ahaitouf
,
Yacine Halfaya
,
Suresh Sundaram
,
Simon Gautier
,
Paul Voss
et al.
Proceedings
hal-03120961v1
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MOVPE growth of h-BN on patterned sapphire substrates and its application on selective area growth of GaN based LEDs structures
Suresh Sundaram
,
Soufiane Karrakchou
,
Adama Mballo
,
Thi Quynh Phuong Vuong
,
Yacine Halfaya
et al.
MRS 2021, Dec 2021, Boston, United States
Conference papers
hal-03477821v1
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Nanopyramid-based absorber to boost the efficiency of InGaN solar cells
Walid El Huni
,
Soufiane Karrakchou
,
Yacine Halfaya
,
Muhammad Arif
,
Matthew B Jordan
et al.
Journal articles
hal-02282639v1
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Light-Emitting Diodes: Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019)
Suresh Sundaram
,
Xin Li
,
Yacine Halfaya
,
Taha Ayari
,
Gilles Patriarche
et al.
Journal articles
hal-02282666v1
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Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performance
Taha Ayari
,
Suresh Sundaram
,
Xin Li
,
Saiful Alam
,
Chris Bishop
et al.
Journal articles
hal-02158426v1
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Sensors based on AlGaN/GaN HEMT for fast H2 and O2 detection and measurement at high temperature
Hassane Ouazzani Chahdi
,
Omar Helli
,
Nour Eddine Bourzgui
,
Leo Breuil
,
David Danovitch
et al.
Conference papers
hal-02451449v1
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Capteur Schottky de detection d’un constituant d’un gaz d’echappement
Chris Bishop
,
Abdallah Ougazzaden
,
Jean-Paul Salvestrini
,
P.L. Voss
,
Laetitia Pradere
et al.
France, N° de brevet: FR 1462277 2014. 2014
Patents
hal-01281183v1
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Detection sensor having a sensor cell with a high-electron mobility transistor and ring resonator(s)
Vincent Aubry
,
Abdallah Ougazzaden
,
Jean-Paul Salvestrini
,
Paul Voss
,
Yacine Halfaya
et al.
United States, Patent n° : US 20200278315A1. III-NITRIDE MATERIALS. 2020
Patents
hal-03414657v1
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Wafer-scale MOVPE growth and characterization of highly ordered h-BN on patterned sapphire substrates
Suresh Sundaram
,
Xin Li
,
Saiful Alam
,
Yacine Halfaya
,
Gilles Patriarche
et al.
Journal articles
hal-02283653v1
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Investigation of Sc2O3 Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH sensor
Nossikpendou Yves Sama
,
Andrew Hathcock
,
Dongyuan He
,
Thi Quynh Phuong Vuong
,
Soufiane Karrakchou
et al.
Conference papers
hal-02870737v1
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Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions
Adama Mballo
,
Ashutosh Srivastava
,
Suresh Sundaram
,
Phuong Vuong
,
Soufiane Karrakchou
et al.
Journal articles
hal-03117696v1
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Investigation of the performance of HEMT based NO, NO2 and NH3 exhaust Gas Sensors for Automotive Antipollution Systems
Yacine Halfaya
,
Chris Bishop
,
Ali Soltani
,
Sundaram Suresh
,
Vincent Aubry
et al.
Journal articles
hal-01277595v1
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