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Epitaxial graphene growth at low argon pressure and characterization of buffer layer on SiC(0001)

Tianlin Wang , Perine Landois , Jean-Roch Huntzinger , Ahmed Azmi Zahab , Alessandro de Cecco et al.
GDR-I Graphene and co Annual meeting 2018, Oct 2018, Sète, France
Conference papers hal-01923963v1

Epitaxial growth of low doped monolayer graphene on 4H-SIC (0001) at low argon pressure

Tianlin Wang , Perine Landois , Maxime Bayle , Jean-Roch Huntzinger , Alessandro de Cecco et al.
GDR-I Graphene and co Annual meeting 2017, Oct 2017, Aussois, France
Conference papers hal-01924058v1

Epitaxial graphene growth and characterisation of buffer layer on SiC(0001)

Tianlin Wang , Jean-Roch Huntzinger , Jean-Manuel Decams , Maxime Bayle , Ahmed Azmi Zahab et al.
2D materials on substrates: growth & properties, Jan 2020, Villard de Lans, France
Conference papers hal-03040807v1

Growth of p-type monolayer graphene on SiC (0001) via sublimation at low argon pressure

Tianlin Wang , Perine Landois , Maxime Bayle , Abir Nachawaty , Wilfried Desrat et al.
GDR, Oct 2016, Oleron, France
Conference poster hal-01455032v1

Évaluation d’usage d’un cahier de sciences utilisé en formation des enseignants du 1er degré

Antonin Boyer , Valérie Munier , Valérie de la Forest , Jacques Fossati , Perine Landois et al.
Mediterranean Journal of Education, 2021, Colloque SIEST Méditerranée, Hammamet 2021, 1 (2), pp.190-201. ⟨10.26220/mje.3868⟩
Journal articles hal-03697800v1
Image document

Contactless Resistivity Measurement for Quantum Phenomenon Studies

Christophe Coillot , Sébastien Nanot , Benoit Jouault , Perine Landois , Sylvie Contreras et al.
European Magnetic Sensors and Actuators Conference (EMSA 2022), Jul 2022, Madrid, Spain
Conference poster hal-03722158v1

Determining the number of layers in few-layer graphene by combining Raman spectroscopy and optical contrast

Maxime Bayle , Nicolas Reckinger , Alexandre Felten , Perine Landois , Ophélie Lancry et al.
Journal of Raman Spectroscopy, 2018, Raman study of graphene and related 2D materials, 49, pp.36-45. ⟨10.1002/jrs.5279⟩
Journal articles hal-01724311v1

Growth of epitaxial graphene on SiC (0001) at low argon pressure and its characterization

Tianlin Wang , Perine Landois , Maxime Bayle , Jean-Roch Huntzinger , Alessandro de Cecco et al.
ICPS, Jul 2018, Montpellier, France
Conference poster hal-01924077v1

Growth of low doped monolayer graphene on SiC(0001) via sublimation at low argon pressure

Perine Landois , Tianlin Wang , Abir Nachawaty , Maxime Bayle , J.M. Decams et al.
Physical Chemistry Chemical Physics, 2017, 10.1039/c7cp01012e. ⟨10.1039/c7cp01012e⟩
Journal articles hal-01540335v1

Sublimation de carbure de silicium : de la couche tampon à la monocouche de graphène

Perine Landois , Jean-Roch Huntzinger , Tianlin Wang , Maxime Bayle , Benoit Jouault et al.
Congrès annuel SFEC, Apr 2020, Samatan, France
Conference papers hal-03040832v1
Image document

Giant step bunching occurrence during graphene growth on 4H SiC(0001)

Haitham Hrich , Matthieu Paillet , Tianlin Wang , Jean-Manuel Decams , Sylvie Contreras et al.
Graphene 2020 on line, Oct 2020, On line, France
Conference poster hal-03039790v1

La spectrométrie Raman comme outil pour l'étude du dopage du graphène

Matthieu Paillet , Romain Parret , Miguel Rubio-Roy , Antoine Tiberj , Jean-Roch Huntzinger et al.
Matériaux 2014, Nov 2014, Montpellier, France
Conference papers hal-01974125v1