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MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics

Suresh Sundaram , Phuong Vuong , Adama Mballo , Taha Ayari , Soufiane Karrakchou et al.
APL Materials, 2021, 9 (6), pp.061101. ⟨10.1063/5.0049306⟩
Journal articles hal-03350328v1

Epitaxial growth and materials characterization of single crystalline boron rich B(AI)N ternary alloys

Thi Quynh Phuong Vuong , Adama Mballo , Suresh Sundaram , Gilles Patriarche , Yacine Halfaya et al.
MRS 2021, Dec 2021, Boston, United States
Conference papers hal-03477839v1

Van der Waals epitaxy by MOCVD of III-Nitrides using two-dimensional hexagonal boron nitride : applications and persperctives

Thi Quynh Phuong Vuong , Adama Mballo , Soufiane Karrakchou , Ashutosh Srivastava , Rajat Gujrati et al.
Workshop Wide bandgap materials, May 2021, Wuhan, China
Conference papers hal-03477812v1
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Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and Nitrogen

Corinne Sartel , Simon Gautier , S. Ould Saad Hamady , N. Maloufi , Jérôme Martin et al.
Superlattices and Microstructures, 2006, 40, pp.476-482. ⟨10.1016/j.spmi.2006.09.026⟩
Journal articles hal-00181631v1

Detection sensor comprising a selective high-electron-mobility transistor for detecting a gaseous or liquid component

Chris Bishop , Vincent Aubry , Abdallah Ougazzaden , Jean-Paul Salvestrini , Paul L. Voss et al.
United States, Patent n° : 16341822. III-NITRIDE MATERIALS. 2020
Patents hal-03350688v1

MOVPE growth of h-BN on patterned sapphire substrates and its application on selective area growth of GaN based LEDs structures

Suresh Sundaram , Soufiane Karrakchou , Adama Mballo , Thi Quynh Phuong Vuong , Yacine Halfaya et al.
MRS 2021, Dec 2021, Boston, United States
Conference papers hal-03477821v1

Wafer-scale van der Waals Epitaxy of III-Nitride Devices on h-BN-An Overview of 2D/3D Epitaxy, Device Fabrication, Mechanical Release-Transfer Methods and Device Performances

Abdallah Ougazzaden , Suresh Sundaram , Thi Quynh Phuong Vuong , Soufiane Karrakchou , Adama Mballo et al.
MRS 2021, Dec 2021, Boston, United States
Conference papers hal-03477832v1
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Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells

V. Gorge , A. Migan-Dubois , Zakaria Djebbour , K. Pantzas , Simon Gautier et al.
Materials Science and Engineering, 2013, B 178, pp.142-148. ⟨10.1016/j.mseb.2012.10.033⟩
Journal articles hal-00764807v1
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Interface states effects in GaN Schottky diodes

Abdelaziz Ahaitouf , Hussein Srour , Sidi Ould Saad Hamady , Nicolas Fressengeas , Abdallah Ougazzaden et al.
Thin Solid Films, 2012, 522, pp.345-351. ⟨10.1016/j.tsf.2012.08.029⟩
Journal articles hal-00720225v1

Effect of aluminium diffusion into 2D hBN on the mechanical release of III-N heterostructures

Thi Quynh Phuong Vuong , Suresh Sundaram , Adama Mballo , Gilles Patriarche , Soufiane Karrakchou et al.
MRS 2021, Dec 2021, Boston, United States
Conference papers hal-03477850v1
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Microstructural, Compositional & Optical Characteristics of GaN Grown by MOVPE on ZnO Epilayers

Dave J. Rogers , Ferecteh Hosseini-Teherani , Tarik Moudakir , Simon Gautier , François Jomard et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2009, 27 (3), pp.1655-1658. ⟨10.1116/1.3137967⟩
Journal articles hal-00448880v1
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Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition

James Gigliotti , Xin Li , Suresh Sundaram , Dogukan A Deniz , Vladimir Prudkovskiy et al.
ACS Nano, 2020, 14 (10), pp.12962-12971. ⟨10.1021/acsnano.0c04164⟩
Journal articles hal-03037159v1

Thermal Stability of Thin hexagonal Boron Nitride grown by MOVPE on Epigraphene

Vishnu Ottapilakkal , Abhishek Juyal , Suresh Sundaram , A. Mballo , P. Vuong et al.
Journal of Crystal Growth, In press
Journal articles hal-03818508v1
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A cost-effective technology to improve power performance of nanoribbons GaN HEMTs

Ali Soltani , Brahim Benbakhti , J.-C. Gerbedoen , Abdelkrim Khediri , Maher, Hassan et al.
Applied Physics Letters, 2022, 120 (4), pp.042102. ⟨10.1063/5.0080240⟩
Journal articles hal-03544158v1
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Evidence of minority carrier traps contribution in deep level transient spectroscopy measurement in n–GaN Schottky diode

Sarrah Amor , Ali Ahaitouf , Abdelaziz Ahaitouf , Jean-Paul Salvestrini , Abdallah Ougazzaden et al.
Superlattices and Microstructures, 2017, 101, pp.529-536. ⟨10.1016/j.spmi.2016.11.011⟩
Journal articles hal-01830928v1

Detection sensor having a sensor cell with a high-electron mobility transistor and ring resonator(s)

Vincent Aubry , Abdallah Ougazzaden , Jean-Paul Salvestrini , Paul Voss , Yacine Halfaya et al.
United States, Patent n° : US 20200278315A1. III-NITRIDE MATERIALS. 2020
Patents hal-03414657v1
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Effect of boron incorporation on growth behavior of BGaN/GaN by MOVPE

Gaëlle Orsal , Nabila Maloufi , Simon Gautier , Marc Alnot , Andrei Sirenko et al.
Journal of Crystal Growth, 2008, 310 (23), pp.5058-5062. ⟨10.1016/j.jcrysgro.2008.08.024⟩
Journal articles hal-00289468v1
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Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran , Mohamed Boucherit , Ali Soltani , Simon Gautier , Tarik Moudakir et al.
Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩
Journal articles hal-00787871v1