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MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics
Suresh Sundaram
,
Phuong Vuong
,
Adama Mballo
,
Taha Ayari
,
Soufiane Karrakchou
et al.
Journal articles
hal-03350328v1
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Epitaxial growth and materials characterization of single crystalline boron rich B(AI)N ternary alloys
Thi Quynh Phuong Vuong
,
Adama Mballo
,
Suresh Sundaram
,
Gilles Patriarche
,
Yacine Halfaya
et al.
MRS 2021, Dec 2021, Boston, United States
Conference papers
hal-03477839v1
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Van der Waals epitaxy by MOCVD of III-Nitrides using two-dimensional hexagonal boron nitride : applications and persperctives
Thi Quynh Phuong Vuong
,
Adama Mballo
,
Soufiane Karrakchou
,
Ashutosh Srivastava
,
Rajat Gujrati
et al.
Workshop Wide bandgap materials, May 2021, Wuhan, China
Conference papers
hal-03477812v1
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Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and Nitrogen
Corinne Sartel
,
Simon Gautier
,
S. Ould Saad Hamady
,
N. Maloufi
,
Jérôme Martin
et al.
Journal articles
hal-00181631v1
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Detection sensor comprising a selective high-electron-mobility transistor for detecting a gaseous or liquid component
Chris Bishop
,
Vincent Aubry
,
Abdallah Ougazzaden
,
Jean-Paul Salvestrini
,
Paul L. Voss
et al.
United States, Patent n° : 16341822. III-NITRIDE MATERIALS. 2020
Patents
hal-03350688v1
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MOVPE growth of h-BN on patterned sapphire substrates and its application on selective area growth of GaN based LEDs structures
Suresh Sundaram
,
Soufiane Karrakchou
,
Adama Mballo
,
Thi Quynh Phuong Vuong
,
Yacine Halfaya
et al.
MRS 2021, Dec 2021, Boston, United States
Conference papers
hal-03477821v1
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Wafer-scale van der Waals Epitaxy of III-Nitride Devices on h-BN-An Overview of 2D/3D Epitaxy, Device Fabrication, Mechanical Release-Transfer Methods and Device Performances
Abdallah Ougazzaden
,
Suresh Sundaram
,
Thi Quynh Phuong Vuong
,
Soufiane Karrakchou
,
Adama Mballo
et al.
MRS 2021, Dec 2021, Boston, United States
Conference papers
hal-03477832v1
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Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells
V. Gorge
,
A. Migan-Dubois
,
Zakaria Djebbour
,
K. Pantzas
,
Simon Gautier
et al.
Journal articles
hal-00764807v1
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Interface states effects in GaN Schottky diodes
Abdelaziz Ahaitouf
,
Hussein Srour
,
Sidi Ould Saad Hamady
,
Nicolas Fressengeas
,
Abdallah Ougazzaden
et al.
Journal articles
hal-00720225v1
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Effect of aluminium diffusion into 2D hBN on the mechanical release of III-N heterostructures
Thi Quynh Phuong Vuong
,
Suresh Sundaram
,
Adama Mballo
,
Gilles Patriarche
,
Soufiane Karrakchou
et al.
MRS 2021, Dec 2021, Boston, United States
Conference papers
hal-03477850v1
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Microstructural, Compositional & Optical Characteristics of GaN Grown by MOVPE on ZnO Epilayers
Dave J. Rogers
,
Ferecteh Hosseini-Teherani
,
Tarik Moudakir
,
Simon Gautier
,
François Jomard
et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2009, 27 (3), pp.1655-1658. ⟨10.1116/1.3137967⟩
Journal articles
hal-00448880v1
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Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition
James Gigliotti
,
Xin Li
,
Suresh Sundaram
,
Dogukan A Deniz
,
Vladimir Prudkovskiy
et al.
Journal articles
hal-03037159v1
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Thermal Stability of Thin hexagonal Boron Nitride grown by MOVPE on Epigraphene
Vishnu Ottapilakkal
,
Abhishek Juyal
,
Suresh Sundaram
,
A. Mballo
,
P. Vuong
et al.
Journal of Crystal Growth, In press
Journal articles
hal-03818508v1
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A cost-effective technology to improve power performance of nanoribbons GaN HEMTs
Ali Soltani
,
Brahim Benbakhti
,
J.-C. Gerbedoen
,
Abdelkrim Khediri
,
Maher, Hassan
et al.
Journal articles
hal-03544158v1
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Evidence of minority carrier traps contribution in deep level transient spectroscopy measurement in n–GaN Schottky diode
Sarrah Amor
,
Ali Ahaitouf
,
Abdelaziz Ahaitouf
,
Jean-Paul Salvestrini
,
Abdallah Ougazzaden
et al.
Journal articles
hal-01830928v1
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Detection sensor having a sensor cell with a high-electron mobility transistor and ring resonator(s)
Vincent Aubry
,
Abdallah Ougazzaden
,
Jean-Paul Salvestrini
,
Paul Voss
,
Yacine Halfaya
et al.
United States, Patent n° : US 20200278315A1. III-NITRIDE MATERIALS. 2020
Patents
hal-03414657v1
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Effect of boron incorporation on growth behavior of BGaN/GaN by MOVPE
Gaëlle Orsal
,
Nabila Maloufi
,
Simon Gautier
,
Marc Alnot
,
Andrei Sirenko
et al.
Journal articles
hal-00289468v1
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Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors
Vinod Ravindran
,
Mohamed Boucherit
,
Ali Soltani
,
Simon Gautier
,
Tarik Moudakir
et al.
Journal articles
hal-00787871v1
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