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Homogeneous linewidth of the intraband transition at 1.55µm in GaN/AlN quantum dots

Dac Trung Nguyen , Wolf Wuester , Philippe Roussignol , Christophe Voisin , Guillaume Cassabois et al.
Applied Physics Letters, 2010, 97, pp.061903
Journal articles hal-00517734v1

Selective Area Growth of GaN Nanowires on Graphene Nanodots

Martina Morassi , Nan Guan , Vladimir Dubrovskii , Yury Berdnikov , Camille Barbier et al.
Crystal Growth & Design, 2019, 20 (2), pp.552-559. ⟨10.1021/acs.cgd.9b00556⟩
Journal articles hal-03024971v1
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Investigating the Secondary Electron Emission of Nanomaterials Induced by a High‐Resolution Proton Beam

Marian Cholewa , Anna Grędysa , Andrii Pozaruk , Thomas Osipowicz , Jeroen van Kan et al.
physica status solidi (b), 2022, 259 (4), pp.2100445. ⟨10.1002/pssb.202100445⟩
Journal articles hal-03853950v1
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Electromechanical conversion efficiency of GaN NWs: critical influence of the NW stiffness, the Schottky nano-contact and the surface charge effects

Noelle Gogneau , Pascal Chrétien , Tanbir Sodhi , Laurent Couraud , Laetitia Leroy et al.
Nanoscale, 2022, 14 (13), pp.4965-4976. ⟨10.1039/d1nr07863a⟩
Journal articles hal-03719768v1

Core-shell AlGaAs nanowires for high efficiency tandem solar cell on Si

Marco Vettori , Abdennacer Benali , Philippe Regreny , Nicolas Chauvin , Emmanuel Drouard et al.
Journées Nationales du PhotoVoltaïque (JNPV 2016), Nov 2016, Dourdan, France
Conference papers hal-02072400v1

Flexible Light Emitting Diodes Based on Nitride Nanowires

Nan Guan , Xing Dai , Agnes Messanvi , Hezhi Zhang , Jianchang Yan et al.
CLEO: Science and Innovations, May 2017, San Jose, United States. pp.STh3I.1
Conference papers hal-01986702v1
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Green electroluminescence from radial m -plane InGaN quantum wells grown on GaN wire sidewalls by metal–organic vapor phase epitaxy

Akanksha Kapoor , Nan Guan , Martin Vallo , Agnès Messanvi , Lorenzo Mancini et al.
ACS photonics, 2018, 5 (11), pp.4330-4337. ⟨10.1021/acsphotonics.8b00520⟩
Journal articles hal-01986657v1
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Flexible Photodiodes Based on Nitride Core/Shell p-n Junction Nanowires

H Zhang , Xing Dai , Nan Guan , Agnes Messanvi , Vladimir Neplokh et al.
ACS Applied Materials & Interfaces, 2016, 8, pp.26198 - 26206. ⟨10.1021/acsami.6b06414⟩
Journal articles hal-01390933v1
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A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells

P. Quach , A. Jollivet , A. Babichev , N. Isac , M. Morassi et al.
Applied Physics Letters, 2022, 120 (17), pp.171103. ⟨10.1063/5.0086641⟩
Journal articles hal-03823140v1
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Cathodoluminescence mapping for the determination of n-type doping in single GaAs nanowires

Hung-Ling Chen , Chalermchai Himwas , Andrea Scaccabarozzi , Pierre Râle , Fabrice Oehler et al.
IEEE PVSEC, Jun 2017, Washington, United States
Conference papers hal-02181001v1

Nitride Nanowires for Light Emitting Diodes

Nan Guan , Xing Dai , François Julien , J. Eymery , Christophe Durand et al.
Light Emitting Diodes: Materials, Processes, Devices and Applications, pp.425-484, 2019, 978-3319992105. ⟨10.1007/978-3-319-99211-2_12⟩
Book sections hal-01986835v1
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Dual‐color emission from monolithic m‐plane core‐shell InGaN/GaN quantum wells

Akanksha Kapoor , Vincent Grenier , Eric Robin , Catherine Bougerol , Gwenolé Jacopin et al.
Advanced Photonics Research, 2021, 2, pp.2000148. ⟨10.1002/adpr.202000148⟩
Journal articles cea-03138764v1

Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates

Vladimir Neplokh , Ahmed Ali , François H. Julien , Martin Foldyna , Ivan Mukhin et al.
Materials Science in Semiconductor Processing, 2016, 55, pp.72 - 78. ⟨10.1016/j.mssp.2016.03.002⟩
Journal articles hal-01401078v1

Yellow and green luminescence in single-crystal Ge-catalyzed GaN nanowires grown by low pressure chemical vapor deposition

Umar Saleem , Muhammad Danang Birowosuto , Noelle Gogneau , Philippe Coquet , Maria Tchernycheva et al.
Optical Materials Express, 2017, 7 (6), pp.1995. ⟨10.1364/OME.7.001995⟩
Journal articles hal-02385654v1
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Etching of the SiGa x N y Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE

Julien Bosch , Pierre-Marie Coulon , Sébastien Chenot , Marc Portail , Christophe Durand et al.
Crystal Growth & Design, 2022, 22 (9), pp.5206-5214. ⟨10.1021/acs.cgd.2c00286⟩
Journal articles hal-03848820v1

Nitride nanowire light emitting diodes

Maria Tchernycheva , Xing Dai , Agnes Messanvi , Hezhi Zhang , Vladimir Neplokh et al.
2015 17th International Conference on Transparent Optical Networks (ICTON), Jul 2015, Budapest, France. pp.1-4
Conference papers hal-02177767v1

InGaN/GaN nanowire flexible light emitting diodes and photodetectors

Nan Guan , Xing Dai , Hezhi Zhang , Lorenzo Mancini , Akanksha Kapoor et al.
2017 19th International Conference on Transparent Optical Networks (ICTON), Jul 2017, Girona, Spain. ⟨10.1109/ICTON.2017.8024808⟩
Conference papers hal-01986706v1

Electron beam induced current investigation of Ga(In)N nanowires (Conference Presentation)

Omar Saket , Fabien Bayle , François Julien , Martina Morassi , Nuno Amador et al.
Gallium Nitride Materials and Devices XIV, Feb 2019, San Francisco, SPIE, pp.29, 2019, ⟨10.1117/12.2509370⟩
Proceedings hal-02385635v1
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Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors

Nan Guan , Xing Dai , Agnes Messanvi , Hezhi Zhang , Jianchang Yan et al.
ACS photonics, 2016, 3 (4), pp.597-603. ⟨10.1021/acsphotonics.5b00696⟩
Journal articles hal-01320610v1

Core–Shell Heterojunction Solar Cells Based on Disordered Silicon Nanowire Arrays

Aliénor Svietlana Togonal , Martin Foldyna , Wanghua Chen , Jian Xiong Wang , Vladimir Neplokh et al.
Journal of Physical Chemistry C, 2016, 120 (5), pp.2962 - 2972. ⟨10.1021/acs.jpcc.5b09618⟩
Journal articles hal-01401074v1

Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence

Hung-Ling Chen , Chalermchai Himwas , Andrea Scaccabarozzi , Pierre Râle , Fabrice Oehler et al.
Nano Letters, 2017, 17 (11), pp.6667-6675. ⟨10.1021/acs.nanolett.7b02620⟩
Journal articles hal-01972834v1

HETONAN project: high efficiency tandem solar cells based on III-V nanowires on silicon

Alain Fave , Marco Vettori , Céline Chevalier , Nicolas Chauvin , Philippe Regreny et al.
Journées Nationales des Nanofils Semiconducteurs (J2N 2017), Nov 2017, Grenoble, France
Conference papers hal-02071013v1
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Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

B. Damilano , Stephane Vezian , M.P. Chauvat , Pierre Ruterana , Nuño Amador-Méndez et al.
Journal of Applied Physics, 2022, 132 (3), pp.035302. ⟨10.1063/5.0089892⟩
Journal articles hal-03865257v1
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Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes

Vladimir Neplokh , Agnes Messanvi , Hezhi Zhang , François H. Julien , Andrey Babichev et al.
Nanoscale Research Letters, 2015, ⟨10.1186/s11671-015-1143-5⟩
Journal articles hal-01320698v1
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Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires

Xing Dai , Agnes Messanvi , Hezhi Zhang , Christophe Durand , Joël Eymery et al.
Nano Letters, 2015, 15 (10), pp.6958-6964. ⟨10.1021/acs.nanolett.5b02900⟩
Journal articles hal-01252043v1

Colour optimization of phosphor-converted flexible nitride nanowire white light emitting diodes

Nan Guan , Nuño Amador-Mendez , Junkang Wang , Subrata Das , Akanksha Kapoor et al.
Journal of Physics: Photonics, 2019, 1 (3), pp.035003. ⟨10.1088/2515-7647/ab2c84⟩
Journal articles hal-02299781v1
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InGaN/GaN core/shell nanowires for visible to ultraviolet range photodetection

Hezhi H Zhang , Agnès Messanvi , Christophe Durand , Joël Eymery , Pierre Lavenus et al.
physica status solidi (a), 2016, 213 (4), pp.936-940. ⟨10.1002/pssa.201532573⟩
Journal articles hal-01390994v1
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Evaluation of Effective Elastic Properties of Nitride NWs/Polymer Composite Materials Using Laser-Generated Surface Acoustic Waves

Evgeny Glushkov , Natalia Glushkova , Bernard Bonello , Lu Lu , Eric Charron et al.
Applied Sciences, 2018, 8 (11), pp.2319. ⟨10.3390/app8112319⟩
Journal articles hal-01954341v1

The elevated colour rendering of white-LEDs by microwave-synthesized red-emitting (Li, Mg) 3 RbGe 8 O 18 :Mn 4+ nanophosphors

Malini Abraham , Arup Kunti , Thejas K.K. , Nuño Amador-Mendez , Noëlle Gogneau et al.
Dalton Transactions, 2021, 50 (8), pp.3044-3059. ⟨10.1039/D0DT04309E⟩
Journal articles hal-03448331v1
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In Situ X-ray Diffraction Study of GaN Nucleation on Transferred Graphene

Camille Barbier , Tao Zhou , Gilles Renaud , Patrick Le Fèvre , Frank Glas et al.
Crystal Growth & Design, 2020, 20 (6), pp.4013-4019. ⟨10.1021/acs.cgd.0c00306⟩
Journal articles hal-03008961v1