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Room-Temperature Transport of Indirect Excitons in (Al,Ga)N/GaN Quantum Wells

Fedor Fedichkin , Thierry Guillet , Pierre Valvin , Benoit Jouault , Christelle Brimont et al.
Physical Review Applied, 2016, 6 (1), pp.014011. ⟨10.1103/PhysRevApplied.6.014011⟩
Journal articles hal-01353893v2

Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells.

François Chiaruttini , Thierry Guillet , Christelle Brimont , Thierry Bretagnon , Laetitia Doyennette et al.
International Conference on the Physics of Semiconductors, Jul 2018, Montpellier, France
Conference papers hal-01907806v1
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Enhanced excitonic emission efficiency in porous GaN

Thi Huong Ngo , Bernard Gil , T. Shubina , B. Damilano , Stephane Vezian et al.
Scientific Reports, 2018, 8, pp.15767. ⟨10.1038/s41598-018-34185-1⟩
Journal articles hal-01905654v1

Bernal Boron Nitride Crystals Identified by Deep-Ultraviolet Cryomicroscopy

Adrien Rousseau , Pierre Valvin , Wilfried Desrat , L. Xue , J. Li et al.
ACS Nano, 2022, 16, pp.2756. ⟨10.1021/acsnano.1c09717⟩
Journal articles hal-03603645v1

Hexagonal Boron Nitride Single Crystal Growth from Solution with a Temperature Gradient

Jiahan Li , Yuan Chao , Christine Elias , Junyong Wang , Xiaotiang Zhang et al.
Chemistry of Materials, 2020, 32 (12), pp.5066-5072. ⟨10.1021/acs.chemmater.0c00830⟩
Journal articles hal-02615364v1

Phonon-Photon Mapping in a Color Center in Hexagonal Boron Nitride

Phuong Vuong , Guillaume Cassabois , Pierre Valvin , Abdelkarim Ouerghi , Yannick Chassagneux et al.
Physical Review Letters, 2016, 117, pp.097402. ⟨10.1103/PhysRevLett.117.097402⟩
Journal articles hal-01362938v1

Internal quantum efficiency in polar and semipolar (11e22) InxGa1-xN/InyGa1-yN quantum wells emitting from blue to red

Thi Huong Ngo , Nicolas Chery , Pierre Valvin , A Courville , Philippe de Miery et al.
Superlattices and Microstructures, 2018, 113, pp.129. ⟨10.1016/j.spmi.2017.10.030⟩
Journal articles hal-01700051v1
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Rhombohedral and Turbostratic Boron Nitride: X-ray Diffraction and Photoluminescence Signatures

Matthieu Moret , Adrien Rousseau , Pierre Valvin , Shashim Sharma , Laurent Souqui et al.
Applied Physics Letters, 2022, 119 (26), pp.262102. ⟨10.1063/5.0076424⟩
Journal articles hal-03507440v1
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Overtones of interlayer shear modes in the phonon-assisted emission spectrum of hexagonal boron nitride

Phuong Vuong , Guillaume Cassabois , Pierre Valvin , Vincent Jacques , R. Cusco et al.
Physical Review B, 2017, 95 (4), pp.045207. ⟨10.1103/PhysRevB.95.045207⟩
Journal articles hal-01475800v1

Indirect excitons in wide band gap semiconductors.

Fedor Fedichkin , Benoit Jouault , Thierry Guillet , Christelle Brimont , Pierre Valvin et al.
International School on Nanophotonics and Photovoltaics. INSP 2015., MISP : Mediterranean Institute of Fundamental Physics, Sep 2015, Cefalu, Italy
Conference papers hal-01389731v1

Phase transition of indirect excitons in GaN quantum wells.

Thierry Guillet , François Chiaruttini , Christelle Brimont , Thierry Bretagnon , Laetitia Doyennette et al.
International Workshop on Nitride semiconductors - IWN2018., Nov 2018, Kanazawa, Japan
Conference papers hal-01910225v1

The Determination of the Optical Bandgap of the Bernal and Rhombohedral Boron Nitride Polymorphs

Adrien Rousseau , Matthieu Moret , Pierre Valvin , Wilfried Desrat , Jiahan Li et al.
Physical Review Materials, 2021, 5, pp.064602. ⟨10.1103/PhysRevMaterials.5.064602⟩
Journal articles hal-03263151v1
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Deep ultraviolet hyperspectral cryomicroscopy in boron nitride: Photoluminescence in crystals with an ultra-low defect density

Pierre Valvin , Thomas Pelini , Guillaume Cassabois , Alberto Zobelli , Jiahan Li et al.
AIP Advances, 2020, 10, pp.075025. ⟨10.1063/5.0013121⟩
Journal articles hal-02909124v1

Auger effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells

Thi Huong Ngo , Bernard Gil , Pierre Valvin , Benjamin Damilano , K. Lekhal et al.
Japanese Journal of Applied Physics, 2016, 55, pp.05FG10. ⟨10.7567/JJAP.55.05FG10⟩
Journal articles hal-01382420v1

Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy

Phuong Vuong , Guillaume Cassabois , Pierre Valvin , Emmanuel Rousseau , Alex Summerfield et al.
2D Materials, 2017, 4, pp.021023. ⟨10.1088/2053-1583/aa604a⟩
Journal articles hal-01492483v1

Transport of indirect excitons in GaN quantum wells.

Thierry Guillet , Benoit Jouault , Fedor Fedichkin , Pierre Lefebvre , Christelle Brimont et al.
International Workshop on Nitride Semiconductors (IWN 2016), Alan Doolittle, Tomás Palacios, Stacia Keller, Siddharth Rajan, Oct 2016, Orlando, United States
Conference papers hal-01388983v1

Trapping dynamics of indirect excitons into electrostatic traps in GaN quantum wells.

Thierry Guillet , François Chiaruttini , Christelle Brimont , Thierry Bretagnon , Laetitia Doyennette et al.
TERAMETANANO-3: Terahertz Emission, Metamaterials and Nanophotonics., Alexey Kavokin - Jerome Tignon - Timothy C. H. Liew - Pavel Belov, Mar 2018, Uxmal, Mexico
Conference papers hal-01908823v1
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UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dot

Julien Brault , Mohamed Al Khalfioui , Samuel Matta , Thi Huong Ngo , S. Chenot et al.
Crystals, 2020, 10 (12), pp.1097. ⟨10.3390/cryst10121097⟩
Journal articles hal-03030472v1

Defect Engineering of Monoisotopic Hexagonal Boron Nitride Crystals via Neutron Transmutation Doping

Jiahan Li , Evan R. Glaser , Christine Elias , Gaihua Ye , Dylan Evans et al.
Chemistry of Materials, 2021, 33 (23), pp.9231-9239. ⟨10.1021/acs.chemmater.1c02849⟩
Journal articles hal-03674350v1

Hybrid π-conjugated organosilica materials: semiconductors for fully covalent transistors or photovoltaic applications

Gilles Roche , Thérèse Gorisse , Damien Thuau , Pierre Valvin , Thomas Tjoutis et al.
SPIC 2017, Oct 2017, Limoges, France
Conference papers hal-02526395v1

Homogeneous versus inhomogeneous broadening of the photoluminescence in polar GaN/(AlGa)N quantum wells.

Masha Vladimirova , Thierry Guillet , Benoit Jouault , Christelle Brimont , Denis Scalbert et al.
International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN18., Sven Höfling, Alexei Kavokin, Jul 2017, Würtzburg, Germany
Conference papers hal-01908565v1

Indirect excitons in polar group III nitride quantum wells.

Fedor Fedichkin , Benoit Jouault , Thierry Guillet , Christelle Brimont , Pierre Valvin et al.
8th International Conference on Materials Science and Condensed Matter Physics, Leonid Kulyuk, Sep 2016, Chisinau, Moldova
Conference papers hal-01388929v1
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Shallow and deep levels in carbon-doped hexagonal boron nitride crystals

Thomas Pelini , Christine Elias , R. Page , L. Xue , S. Liu et al.
Physical Review Materials, 2019, 3, pp.094001. ⟨10.1103/PhysRevMaterials.3.094001⟩
Journal articles hal-02289672v1

Phonon symmetries in hexagonal boron nitride probed by incoherent light emission

Phuong Vuong , Guillaume Cassabois , Pierre Valvin , Vincent Jacques , Arie van Der Lee et al.
2D Materials, 2016, 4, pp.011004. ⟨10.1088/2053-1583/4/1/011004⟩
Journal articles hal-01394786v1

Band gap measurements of monolayer h-BN and insights into carbon-related point defects

Ricardo Javier Pena Roman , Fabio J. R. Costa Costa , Alberto Zobelli , Christine Elias , Pierre Valvin et al.
2D Materials, 2021, 8 (4), pp.044001. ⟨10.1088/2053-1583/ac0d9c⟩
Journal articles hal-03374011v1
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Direct band-gap crossover in epitaxial monolayer boron nitride

Christine Elias , Pierre Valvin , Thomas Pelini , Alex Summerfeld , Chris Mellor et al.
Nature Communications, 2019, 1 (1), pp.1. ⟨10.1038/s41467-019-10610-5⟩
Journal articles hal-02156532v1
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Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

B. Damilano , Stephane Vezian , M.P. Chauvat , Pierre Ruterana , Nuño Amador-Méndez et al.
Journal of Applied Physics, 2022, 132 (3), pp.035302. ⟨10.1063/5.0089892⟩
Journal articles hal-03865257v1

Hexagonal Boron Nitride Crystal Growth from Iron, a Single Component Flux

Jiahan Li , Junyong Wang , Xiaotian Zhang , Christine Elias , Gaihua Ye et al.
ACS Nano, 2021, 15 (4), pp.7032-7039. ⟨10.1021/acsnano.1c00115⟩
Journal articles hal-03282908v1

Single crystal growth of monoisotopic hexagonal boron nitride from a Fe-Cr flux

Jiahan Li , Christine Elias , Gaihua Ye , Dylan Evans , Song Liu et al.
chemistry of materials, 8 (29), pp.9931-9935, 2020, ⟨10.1039/d0tc02143a⟩
Book sections hal-02986306v1

Hybrid π-conjugated organosilica materials: semiconductors for the first fully covalent transistor or photovoltaic applications

Gilles Roche , Thérèse Gorisse , Damien Thuau , Konrad Wojciechowski , Iván Ramírez et al.
FPi13, Prof. H. Yan & Prof. B.Z. Tang, Jun 2017, Hongkong, China
Conference papers hal-02526416v1