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authIdHal_s : bassem-salem

Growth and characterization of InAs quantum dots on GaAs (100) emitting at 1.31μm

V Celibert. , B. Salem , G Guillot. , C Bru-Chevallier. , L Grenouillet. et al.
Materials Research Society , 2003, Materials Research Society Symposium - Proceedings, 794, pp. 207-212
Journal articles hal-02353320v1

High-performance terahertz source using ion implanted photoconductive antenna

Bassem Salem , Denis Morris , Vincent Aimez , Jean Beerens , Jacques Beauvais et al.
Integrated Optoelectronic Devices 2005, 2005, San Jose, United States. pp.193-198, ⟨10.1117/12.592129⟩
Conference papers hal-02353332v1

PiezoNEMS: Semiconductor nanowires and heterostructures for sensing and energy harvesting

L. Montès , X. Xu , A. Potie , B. Bercu , R. Hinchet et al.
2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) - formerly known as the Semiconductor Conference Dresden (SCD), Sep 2012, Grenoble, France. pp.69-74, ⟨10.1109/ISCDG.2012.6359987⟩
Conference papers hal-02333027v1

Integration of SiC-1D nanostructures into nano-Field Effect Transistors, Mater. Sci. Semicond. Process.

M. Ollivier , L. Latu-Romain , B. Salem , L. Fradetal , V. Brouzet et al.
Materials Science in Semiconductor Processing, 2015, 29, pp.218-222. ⟨10.1016/j.mssp.2014.03.020⟩
Journal articles hal-01302249v1

Capacitance–voltage profile characteristics of Schottky barrier structure with InAs quantum dots grown on InAlAs/InP(001)

M. Baira , R. Ajjel , H. Maaref , B. Salem , G. Bremond et al.
Materials Science and Engineering: C, 2006, 26 (2-3), pp.583-585. ⟨10.1016/j.msec.2005.10.003⟩
Journal articles istex hal-02088421v1

Self-catalyzed InP nanowires grown by VLS-MBE on silicon for photonics

Jean-Baptiste Barakat , R. Anufriev , H. Dumont , P. Regreny , Nicolas Chauvin et al.
MRS Spring Meeting, Apr 2014, San-Francisco, United States
Conference poster hal-02071838v1

Elaboration and Characterization of interfacial abruptness in Si-SiGe heterostructured Nanowires (hNWs) obtained by VLS-CVD Method

P. Periwal , T. Baron , G. Patriarche , L. Latu-Romain , B. Salem et al.
Workshop NWG 2013, 2013, Lausanne, Switzerland
Conference papers hal-00955748v1
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Morphology Transition of ZnO from Thin Film to Nanowires on Silicon and its Correlated Enhanced Zinc Polarity Uniformity and Piezoelectric Responses

Quang Chieu Bui , Gustavo Ardila , Eirini Sarigiannidou , Hervé Roussel , Carmen Jiménez et al.
ACS Applied Materials & Interfaces, 2020, 12 (26), pp.29583-29593. ⟨10.1021/acsami.0c04112⟩
Journal articles hal-02917568v1
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Tunable enhancement of light absorption and scattering in Si 1 − x Ge x nanowires

Houssem Kallel , Arnaud Arbouet , Gérard Benassayag , Abdallah Chehaidar , Alexis Potie et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (8), ⟨10.1103/PhysRevB.86.085318⟩
Journal articles hal-02333047v1

Quantum confinement effects and strain-induced band-gap energy shifts in core-shell Si-SiO2 nanowires

O. Demichel , V. Calvo , P. Noe , B. Salem , Pier-Francesco Fazzini et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (24), pp.245443
Journal articles hal-00641304v1

Optical properties of self-organized InAs nanostructures grown on InAlAs/InP(001)

M. Hjiri , F. Hassen , H. Maaref , B. Salem , G. Bremond et al.
Physica E: Low-dimensional Systems and Nanostructures, 2003, 17, pp.180-182. ⟨10.1016/S1386-9477(02)00750-6⟩
Journal articles istex hal-02090516v1

Growth and characterization of Au catalyzed SiGe NW and alternatives metals catalyzed Si NW

A. Potié , T. Baron , F. Oehler , P. Gentile , G. Rosaz et al.
EMRS, Sep 2010, Varsovie, Poland
Conference papers hal-00649924v1

Light absorption and carrier diffusion in single Si nanowires studied via Microphotocurrent spectroscopy and electron beam induced current

A. Solanki , N. Pauc , P. Gentile , V. Calvo , G. Rosaz et al.
GDR nanofils semiconducteurs, Jan 2011, Lille, France
Conference papers hal-00650203v1

De l’élaboration de nanonets de silicium par voie liquide à la fabrication de transistors à effet de champ

Maxime Legallais , P. Serre , Bassem Salem , T. Baron , V. Stambouli et al.
12ème Journée Sol-Gel et Chimie Liquide Rhône-Alpes-Auvergne (JSGRAA12), G. Chadeyron, A. Potdevin, D. Boyer, F. Vocanson et M. Langlet, Mar 2016, Saint-Etienne, France
Conference papers hal-02016948v1

New semiconductive nanostructures for electrical biosensing

Maxime Legallais , Thomas Demes , Romain Bange , Céline Ternon , Edwige Bano et al.
Journée Thématique Minalogic : Technologies du numérique pour la médecine personnalisée, Nov 2016, La Tronche, France
Conference papers hal-02049764v1

Procédé d'élaboration sur un matériau diélectrique de nanofils en matériaux semi-conducteur connectant deux électrodes.

B. Salem , T. Baron , P. Gentile , P. Ferret , T. Ernst et al.
France, Patent n° : Patent PA2541FR/ FR 2 924 108/ WO2009098398. 2009
Patents hal-00668079v1

Low size dispersion of InAs quantum islands emitting at 1.55μm on InP (001)

C Monat. , M Gendry. , J Brault. , M.P Besland. , P Regreny. et al.
International Conference on Indium Phosphide and Related Materials, 2002, Conference Proceedings, pp. 565-568
Journal articles hal-02353255v1
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Electrical properties of self-assembled InAs/InAlAs quantum dots on InP

N. Hamdaoui , R. Ajjel , H. Maaref , B. Salem , G. Bremond et al.
Semiconductor Science and Technology, 2010, 25 (6), pp.065011. ⟨10.1088/0268-1242/25/6/065011⟩
Journal articles istex hal-00623432v1
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Implementing the Reactor Geometry in the Modeling of Chemical Bath Deposition of ZnO Nanowires

Clément Lausecker , Bassem Salem , Xavier Baillin , Vincent Consonni
Nanomaterials, 2022, 12 (7), pp.1069. ⟨10.3390/nano12071069⟩
Journal articles hal-03619288v1
Image document

Study of structural and electrical properties of ferroelectric HZO films obtained by single-target sputtering

Mohammed-Bilal Hachemi , Bassem Salem , Vincent Consonni , Herve Roussel , A. Garraud et al.
AIP Advances, 2021
Journal articles hal-03439509v1

Functional Devices from Bottom-Up Silicon Nanowires: A Review

Tabassom Arjmand , Maxime Legallais , Thi Thu Thuy Nguyen , Pauline Serre , Monica Vallejo-Perez et al.
Nanomaterials, 2022, 12 (7), pp.1043. ⟨10.3390/nano12071043⟩
Journal articles hal-03698021v1

Electrical characterization of silicon and silicon-germanium nanowires Field effect transistors

B. Salem , G. Rosaz , N. Pauc , P. Gentile , F. Bassani et al.
RAM2013 - Research to Applications & Markets, Jun 2013, Sousse, Tunisia
Conference papers hal-00955743v1

Procédé d’élaboration de nanofils horizontaux sur un diélectrique

B. Salem , T. Baron , P. Gentile , P. Ferret , T. Ernst et al.
France, N° de brevet: N° 07 08351. 2007
Patents hal-01906181v1

Highly performant field-effect transistors based on Si nanonet: a novel approach for portable, easy-to-use and label-free DNA sensors

Thuy Nguyen , Monica Vallejo Pérez , Valérie Stambouli , Mireille Mouis , Bassem Salem et al.
International Workshop on Semi-conducting Nanomaterials for Health, Environment and Security Applications,, Nanonets2Sense, Nov 2018, Grenoble, France
Conference papers hal-01981214v1
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Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing

Bouraoui Ilahi , Olfa Nasr , Bernard Paquette , H. Hadj Alouane , Nicolas Chauvin et al.
Journal of Alloys and Compounds, 2016, 656, pp.132-137. ⟨10.1016/j.jallcom.2015.09.231⟩
Journal articles hal-01918155v1

InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOCVD for the fabrication of InAs FINFET

Tiphaine Cerba , Mickaël Martin , Jeremy Moeyaert , Reynald Alcotte , Bassem Salem et al.
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 2018), Jun 2018, Nara, Japan
Conference papers hal-01954906v1

PiezoNEMS: new concepts for sensors and energy harvesting devices

L. Montès , R. Hinchet , X. Xu , A. Potié , B. Bercu et al.
Workshop on Next generation of self-power smart sensors for environmental monitoring, Mar 2013, Nanyang, Singapore
Conference papers hal-01182203v1

Catalyst Assisted Chemical Vapor Deposition of Silicon Nanowires and Nanotrees : morphology, kinetics, critical condition for growth, electrical properties

F. Dhalluin , M. den Hertog , I. Abed , B. Salem , J.R. Plaussu et al.
MRS Fall Meeting, Nov 2007, boston, United States
Conference papers hal-00396815v1

Wideband frequency and in-situ characterization of Aluminium Nitride (AlN) in a Metal/Insulator/Metal (MIM) configuration

T. Bertaud , E. Defay , C. Bermond , T. Lacrevaz , J. Abergel et al.
Microelectronic Engineering, 2011, 88 (5), pp.564-568
Journal articles hal-01068836v1

From planar to vertical nanowires field-effect transistors

G. Rosaz , B. Salem , N. Pauc , P. Gentile , P. Periwal et al.
MRS proceeding, 2012, 1439 Symposium AA
Journal articles hal-00777302v1