MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances
Y. Cordier
,
F. Semond
,
P. Lorenzini
,
N. Grandjean
,
F. Natali
et al.
2002, pp.99-100
Conference papers
hal-00149696v1
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Subliming GaN into Ordered Nanowire Arrays for Ultraviolet and Visible Nanophotonics
Sylvain Sergent
,
Benjamin Damilano
,
Stephane Vezian
,
Sébastien Chenot
,
Masato Takiguchi
et al.
Journal articles
hal-03024899v1
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The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells
Nicolas Chery
,
Thi Huong Ngo
,
M.P. Chauvat
,
B. Damilano
,
A Courville
et al.
Journal of Microscopy , 2018, Special Issue: Microscopy of Semi‐Conducting Materials, 268 (3), pp.305-313.
⟨10.1111/jmi.12657⟩
Journal articles
hal-01691523v1
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Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots.
Maxime Hugues
,
Mirja Richter
,
Jean-Michel Chauveau
,
Benjamin Damilano
,
Jean-Yves Duboz
et al.
Journal articles
hal-01304760v1
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Internal quantum efficiency in polar and semipolar (11e22) InxGa1-xN/InyGa1-yN quantum wells emitting from blue to red
Thi Huong Ngo
,
Nicolas Chery
,
Pierre Valvin
,
A Courville
,
Philippe de Miery
et al.
Journal articles
hal-01700051v1
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High temperature electrical transport study of Si-doped AlN
Sylvie Contreras
,
Leszek Konczewicz
,
Jaweb Ben Messaoud
,
Herve Peyre
,
Mohamed Al Khalfioui
et al.
Journal articles
hal-01425146v1
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Excitons in nitride heterostructures: From zero- to one-dimensional behavior
Daniel Rosales
,
Thierry Bretagnon
,
Bernard Gil
,
A Kahouli
,
Julien Brault
et al.
Journal articles
hal-01905195v1
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Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN
Sylvie Contreras
,
Leszek Konczewicz
,
Sandrine Juillaguet
,
Herve Peyre
,
Mohamed Al Khalfioui
et al.
International Workshop on Nitride Semiconductor , Nov 2018, Kanazawa, Japan
Conference poster
hal-01937531v1
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Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells.
François Chiaruttini
,
Thierry Guillet
,
Christelle Brimont
,
Thierry Bretagnon
,
Laetitia Doyennette
et al.
International Conference on the Physics of Semiconductors , Jul 2018, Montpellier, France
Conference papers
hal-01907806v1
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Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures
Thi Huong Ngo
,
Daniel Rosales
,
Bernard Gil
,
Pierre Valvin
,
Benjamin Damilano
et al.
GALLIUM NITRIDE MATERIALS AND DEVICES X , 2015, san francisco, United States. pp.93630K,
⟨10.1117/12.2076208⟩
Conference papers
hal-01238745v1
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The universal photoluminescence behaviour of yellow light emitting (Ga,In)N/GaN heterostructures
Daniel Rosales
,
Thi Huong Ngo
,
Pierre Valvin
,
K Lekhal
,
B. Damilano
et al.
Journal articles
hal-01101061v1
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Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wells
Aurélien Morel
,
Pierre Lefebvre
,
Thierry Taliercio
,
Bernard Gil
,
Nicolas Grandjean
et al.
International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002. , Jul 2002, Toulouse, France. pp.64-67,
⟨10.1016/S1386-9477(02)00762-2⟩
Conference papers
istex
hal-01319596v1
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Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters
Thi Huong Ngo
,
Rémi Comyn
,
Eric Frayssinet
,
Hyonju Chauveau
,
Sébastien Chenot
et al.
Journal articles
hal-03418915v1
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Influence of surface roughness on the lasing characteristics of optically pumped thin-film GaN microdisks
Hui Zi
,
Yuk Fai Cheung
,
Benjamin Damilano
,
Eric Frayssinet
,
Blandine Alloing
et al.
Journal articles
hal-03681897v1
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Enhanced excitonic emission efficiency in porous GaN
Thi Huong Ngo
,
Bernard Gil
,
T. Shubina
,
B. Damilano
,
Stephane Vezian
et al.
Journal articles
hal-01905654v1
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Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization
D. Cooper
,
V. Fan Arcara
,
B. Damilano
,
L. Amichi
,
A. Mavel
et al.
Journal articles
hal-03418879v1
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Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors
Thi Huong Ngo
,
Rémi Comyn
,
Sébastien Chenot
,
Julien Brault
,
Benjamin Damilano
et al.
Journal articles
hal-03467546v1
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Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells
R. Aristegui
,
F. Chiaruttini
,
B. Jouault
,
P. Lefebvre
,
C. Brimont
et al.
Journal articles
hal-03759667v1
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Control Over Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures
Maria Vladimirova
,
François Chiaruttini
,
Thierry Guillet
,
Christelle Brimont
,
Benoit Jouault
et al.
13th International Conference on Nitride Semiconductors (ICNS-13) , Jul 2019, Bellevue, United States
Conference papers
hal-02466858v1
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Homogeneous versus inhomogeneous broadening of the photoluminescence in polar GaN/(AlGa)N quantum wells.
Masha Vladimirova
,
Thierry Guillet
,
Benoit Jouault
,
Christelle Brimont
,
Denis Scalbert
et al.
International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN18. , Sven Höfling, Alexei Kavokin, Jul 2017, Würtzburg, Germany
Conference papers
hal-01908565v1
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Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon
Farsane Tabataba-Vakili
,
Laetitia Doyennette
,
Christelle Brimont
,
Thierry Guillet
,
Stephanie Rennesson
et al.
Journal articles
hal-02393815v1
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Field distribution and collection efficiency in an AlGaN Metal-Semiconductor-Metal detector
Lionel Hirsch
,
P. Moretto
,
J.Y. Duboz
,
J.L. Reverchon
,
B. Damilano
et al.
J. of Appl. Phys , 2002, 1, pp.1
Journal articles
hal-00183530v1
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MBE growth of AlGaN/GaN HEMTs on resistive Si (111) substrate with RF small signal and power performances
Y. Cordier
,
F. Semond
,
P. Lorenzini
,
N. Grandjean
,
F. Natali
et al.
Journal of Crystal Growth , 2003, 251, pp.811-815
Journal articles
hal-00146661v1
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First power performance demonstration of flexible AlGaN/GaN high electron mobility transistor
Sarra Mhedhbi
,
Marie Lesecq
,
Philippe Altuntas
,
N. Defrance
,
Etienne Okada
et al.
Journal articles
hal-03270110v1
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DUV LEDs based on AlGaN quantum dots
Julien Brault
,
Mohamed Al Khalfioui
,
Mathieu Leroux
,
Samuel Matta
,
Thi-Huong Ngo
et al.
Conference papers
hal-03366593v1
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Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape
B. Damilano
,
Marie Lesecq
,
Di Zhou
,
Éric Frayssinet
,
Sebastien Chenot
et al.
Journal articles
hal-02304909v1
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Vectorial Hologram Based on Pixelated Metasurface
Qinghua Song
,
Arthur Baroni
,
Rajath Sawant
,
Peinan Ni
,
Virginie Brandli
et al.
Conference papers
hal-02962142v1
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Defect-free InGaN nanowires on silicon whatever the indium composition
Mohammed Zeghouane
,
Elissa Roche
,
Geoffrey Avit
,
Yamina Andre
,
Catherine Bougerol
et al.
RÉUNION PLÉNIÈRE DU GDR PULSE 2017 , Oct 2017, Paris, France
Conference poster
hal-01659715v1
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III-nitride on silicon electrically injected microrings for nanophotonic circuits
Farsane Tabataba-Vakili
,
Stéphanie Rennesson
,
Benjamin Damilano
,
Eric Frayssinet
,
Jean-Yves Duboz
et al.
Journal articles
hal-02100722v1
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Photoluminescence properties of (Al,Ga)N nanostructures grown on Al0.5Ga0.5N (0001)
Samuel Matta
,
Julien Brault
,
Thi Huong Ngo
,
B. Damilano
,
Mathieu Leroux
et al.
Journal articles
hal-01700054v1
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