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authIdHal_s : benjamin-damilano

MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances

Y. Cordier , F. Semond , P. Lorenzini , N. Grandjean , F. Natali et al.
2002, pp.99-100
Conference papers hal-00149696v1
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Subliming GaN into Ordered Nanowire Arrays for Ultraviolet and Visible Nanophotonics

Sylvain Sergent , Benjamin Damilano , Stephane Vezian , Sébastien Chenot , Masato Takiguchi et al.
ACS photonics, 2019, 6 (12), pp.3321-3330. ⟨10.1021/acsphotonics.9b01435⟩
Journal articles hal-03024899v1

The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells

Nicolas Chery , Thi Huong Ngo , M.P. Chauvat , B. Damilano , A Courville et al.
Journal of Microscopy, 2018, Special Issue: Microscopy of Semi‐Conducting Materials, 268 (3), pp.305-313. ⟨10.1111/jmi.12657⟩
Journal articles hal-01691523v1

Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots.

Maxime Hugues , Mirja Richter , Jean-Michel Chauveau , Benjamin Damilano , Jean-Yves Duboz et al.
Japanese Journal of Applied Physics, part 2 : Letters, 2007, 46 (14), pp.L317. ⟨10.1143/JJAP.46.L317⟩
Journal articles hal-01304760v1

Internal quantum efficiency in polar and semipolar (11e22) InxGa1-xN/InyGa1-yN quantum wells emitting from blue to red

Thi Huong Ngo , Nicolas Chery , Pierre Valvin , A Courville , Philippe de Miery et al.
Superlattices and Microstructures, 2018, 113, pp.129. ⟨10.1016/j.spmi.2017.10.030⟩
Journal articles hal-01700051v1

High temperature electrical transport study of Si-doped AlN

Sylvie Contreras , Leszek Konczewicz , Jaweb Ben Messaoud , Herve Peyre , Mohamed Al Khalfioui et al.
Superlattices and Microstructures, 2016, 98, pp.253-258. ⟨10.1016/j.spmi.2016.08.038⟩
Journal articles hal-01425146v1

Excitons in nitride heterostructures: From zero- to one-dimensional behavior

Daniel Rosales , Thierry Bretagnon , Bernard Gil , A Kahouli , Julien Brault et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, Physical Review B, 88, pp.125437. ⟨10.1103/PhysRevB.88.125437⟩
Journal articles hal-01905195v1

Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN

Sylvie Contreras , Leszek Konczewicz , Sandrine Juillaguet , Herve Peyre , Mohamed Al Khalfioui et al.
International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan
Conference poster hal-01937531v1

Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells.

François Chiaruttini , Thierry Guillet , Christelle Brimont , Thierry Bretagnon , Laetitia Doyennette et al.
International Conference on the Physics of Semiconductors, Jul 2018, Montpellier, France
Conference papers hal-01907806v1

Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures

Thi Huong Ngo , Daniel Rosales , Bernard Gil , Pierre Valvin , Benjamin Damilano et al.
GALLIUM NITRIDE MATERIALS AND DEVICES X, 2015, san francisco, United States. pp.93630K, ⟨10.1117/12.2076208⟩
Conference papers hal-01238745v1

The universal photoluminescence behaviour of yellow light emitting (Ga,In)N/GaN heterostructures

Daniel Rosales , Thi Huong Ngo , Pierre Valvin , K Lekhal , B. Damilano et al.
Superlattices and Microstructures, 2014, 76, pp.9. ⟨10.1016/j.spmi.2014.09.017⟩
Journal articles hal-01101061v1

Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wells

Aurélien Morel , Pierre Lefebvre , Thierry Taliercio , Bernard Gil , Nicolas Grandjean et al.
International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.64-67, ⟨10.1016/S1386-9477(02)00762-2⟩
Conference papers istex hal-01319596v1
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Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters

Thi Huong Ngo , Rémi Comyn , Eric Frayssinet , Hyonju Chauveau , Sébastien Chenot et al.
Journal of Crystal Growth, 2020, 552, pp.125911. ⟨10.1016/j.jcrysgro.2020.125911⟩
Journal articles hal-03418915v1
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Influence of surface roughness on the lasing characteristics of optically pumped thin-film GaN microdisks

Hui Zi , Yuk Fai Cheung , Benjamin Damilano , Eric Frayssinet , Blandine Alloing et al.
Optics Letters, 2022, 47 (6), pp.1521. ⟨10.1364/OL.449482⟩
Journal articles hal-03681897v1
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Enhanced excitonic emission efficiency in porous GaN

Thi Huong Ngo , Bernard Gil , T. Shubina , B. Damilano , Stephane Vezian et al.
Scientific Reports, 2018, 8, pp.15767. ⟨10.1038/s41598-018-34185-1⟩
Journal articles hal-01905654v1
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Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization

D. Cooper , V. Fan Arcara , B. Damilano , L. Amichi , A. Mavel et al.
Journal of Applied Physics, 2021, 130 (2), pp.025704. ⟨10.1063/5.0054810⟩
Journal articles hal-03418879v1
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Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo , Rémi Comyn , Sébastien Chenot , Julien Brault , Benjamin Damilano et al.
Solid-State Electronics, 2022, 188, pp.108210. ⟨10.1016/j.sse.2021.108210⟩
Journal articles hal-03467546v1
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Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells

R. Aristegui , F. Chiaruttini , B. Jouault , P. Lefebvre , C. Brimont et al.
Physical Review B, 2022, 106 (3), pp.035429. ⟨10.1103/PhysRevB.106.035429⟩
Journal articles hal-03759667v1

Control Over Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures

Maria Vladimirova , François Chiaruttini , Thierry Guillet , Christelle Brimont , Benoit Jouault et al.
13th International Conference on Nitride Semiconductors (ICNS-13), Jul 2019, Bellevue, United States
Conference papers hal-02466858v1

Homogeneous versus inhomogeneous broadening of the photoluminescence in polar GaN/(AlGa)N quantum wells.

Masha Vladimirova , Thierry Guillet , Benoit Jouault , Christelle Brimont , Denis Scalbert et al.
International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN18., Sven Höfling, Alexei Kavokin, Jul 2017, Würtzburg, Germany
Conference papers hal-01908565v1
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Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon

Farsane Tabataba-Vakili , Laetitia Doyennette , Christelle Brimont , Thierry Guillet , Stephanie Rennesson et al.
Scientific Reports, 2019, 9, pp.18095. ⟨10.1038/s41598-019-54416-3⟩
Journal articles hal-02393815v1

Field distribution and collection efficiency in an AlGaN Metal-Semiconductor-Metal detector

Lionel Hirsch , P. Moretto , J.Y. Duboz , J.L. Reverchon , B. Damilano et al.
J. of Appl. Phys, 2002, 1, pp.1
Journal articles hal-00183530v1

MBE growth of AlGaN/GaN HEMTs on resistive Si (111) substrate with RF small signal and power performances

Y. Cordier , F. Semond , P. Lorenzini , N. Grandjean , F. Natali et al.
Journal of Crystal Growth, 2003, 251, pp.811-815
Journal articles hal-00146661v1

First power performance demonstration of flexible AlGaN/GaN high electron mobility transistor

Sarra Mhedhbi , Marie Lesecq , Philippe Altuntas , N. Defrance , Etienne Okada et al.
IEEE Electron Device Letters, 2016, 37 (5), pp.553-555. ⟨10.1109/LED.2016.2542921⟩
Journal articles hal-03270110v1
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DUV LEDs based on AlGaN quantum dots

Julien Brault , Mohamed Al Khalfioui , Mathieu Leroux , Samuel Matta , Thi-Huong Ngo et al.
SPIE OPTO, Mar 2021, Online Only, United States. pp.16, ⟨10.1117/12.2576135⟩
Conference papers hal-03366593v1
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Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape

B. Damilano , Marie Lesecq , Di Zhou , Éric Frayssinet , Sebastien Chenot et al.
IEEE Photonics Technology Letters, 2018, 30 (17), pp.1567-1570. ⟨10.1109/LPT.2018.2858000⟩
Journal articles hal-02304909v1

Vectorial Hologram Based on Pixelated Metasurface

Qinghua Song , Arthur Baroni , Rajath Sawant , Peinan Ni , Virginie Brandli et al.
CLEO: Applications and Technology 2020, OSA / IEEE, May 2020, Wahington, DC (virtual), United States. pp.ATh4I.6, ⟨10.1364/CLEO_AT.2020.ATh4I.6⟩
Conference papers hal-02962142v1

Defect-free InGaN nanowires on silicon whatever the indium composition

Mohammed Zeghouane , Elissa Roche , Geoffrey Avit , Yamina Andre , Catherine Bougerol et al.
RÉUNION PLÉNIÈRE DU GDR PULSE 2017, Oct 2017, Paris, France
Conference poster hal-01659715v1
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III-nitride on silicon electrically injected microrings for nanophotonic circuits

Farsane Tabataba-Vakili , Stéphanie Rennesson , Benjamin Damilano , Eric Frayssinet , Jean-Yves Duboz et al.
Optics Express, 2019, 27 (8), pp.11800-11808. ⟨10.1364/OE.27.011800⟩
Journal articles hal-02100722v1

Photoluminescence properties of (Al,Ga)N nanostructures grown on Al0.5Ga0.5N (0001)

Samuel Matta , Julien Brault , Thi Huong Ngo , B. Damilano , Mathieu Leroux et al.
Superlattices and Microstructures, 2018, 114, pp.161. ⟨10.1016/j.spmi.2017.12.029⟩
Journal articles hal-01700054v1