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authIdHal_s : benoitjouault
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Finite element modeling for temperature stabilization of gated Hall sensors

Benoit Jouault , L. Bouguen , Sylvie Contreras , A. Kerlain , Vincent Mosser et al.
Journal of Applied Physics, 2008, 104 (5), pp.053705. ⟨10.1063/1.2968436⟩
Journal articles hal-00388502v1

High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates

R. Dagher , S. Matta , Romain Parret , Matthieu Paillet , Benoit Jouault et al.
physica status solidi (a), 2017, 214 (4), pp.1600436. ⟨10.1002/pssa.201600436⟩
Journal articles hal-01563258v1

Tunneling and Coulomb Blockade in narrow GaAs/InGaAs/AlGaAs Hall bars in the quantum hall regime

O. Couturaud , Benoit Jouault , S. Bonifacie , Christophe Chaubet , D. Mailly et al.
28th International Conference on the Physics of Semiconductors (ICPS-28), Jul 2006, Vienna (AUSTRIA), France. pp.663-664
Conference papers hal-00541616v1

Spectroscopy of a single Si donor by the resonant tunnelling experiment

M. Baj , M. Gryglas , Benoit Jouault , Duncan Kennedy Maude , G. Faini et al.
35th International School on the Physics of Semiconducting Compounds, Jun 2006, Jaszowiec (POLAND), France. pp.157-162
Conference papers hal-00541617v1

Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates

Nicolas Camara , Jean-Roch Huntzinger , Antoine Tiberj , G. Rius , Benoit Jouault et al.
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), France. pp.203-206
Conference papers hal-00543294v1

Kondo ground state in a quantum dot with an even number of electrons in a magnetic field

D. Giuliano , Benoit Jouault , A. Tagliacozzo
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 63, pp.art. no.-125318
Journal articles hal-00544462v1

Are aharonov-bohm effect and quantized hall regime compatible?

Boris Chenaud , Christophe Chaubet , Benoit Jouault , Laurent Saminadayar , D. Mailly et al.
11th International Symposium on Nanostructures - Physics and Technology, Jun 2003, St Petersburg (RUSSIA), France. pp.535-541
Conference papers hal-00544479v1

Compressibility probed by linear momentum transfer

Fayrouz. Haddad , J.B. Natowitz , Benoit Jouault , V. de La Mota , Guy Royer et al.
Physical Review C, 1996, 53, pp.1437
Journal articles in2p3-00005784v1

Quantum Hall effect in bottom-gated epitaxial graphene grown on the C-face of SiC

Benoit Jouault , N. Camara , B. Jabakhanji , A. Caboni , C. Consejo et al.
Applied Physics Letters, 2012, 100 (5), pp.052102. ⟨10.1063/1.3680564⟩
Journal articles hal-03037520v1

Electronic properties of epitaxial graphene close to the charge neutrality point

Abir Nachawaty , Sébastien Nanot , Alessandro Cresti , Walter Escoffier , Benoit Jouault et al.
Annual meeting of the GDRi Graphene & Co, Oct 2018, Sète, France
Conference papers hal-01966485v1

Indirect excitons in wide band gap semiconductors.

Fedor Fedichkin , Benoit Jouault , Thierry Guillet , Christelle Brimont , Pierre Valvin et al.
International School on Nanophotonics and Photovoltaics. INSP 2015., MISP : Mediterranean Institute of Fundamental Physics, Sep 2015, Cefalu, Italy
Conference papers hal-01389731v1

Weak localization and universal conductance fluctuations on epitaxial graphene grown on the C-face of 8 degrees off-axis 4H-SiC substrates

Bilal Jabakhanji , Nicolas Camara , Christophe Consejo , Benoit Jouault
ADVANCES IN INNOVATIVE MATERIALS AND APPLICATIONS, 2011, KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland. pp.269+, ⟨10.4028/www.scientific.net/AMR.324.269⟩
Conference papers hal-03037526v1

Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates

N. Camara , J. R. Huntzinger , Antoine Tiberj , G. Rius , Benoit Jouault et al.
SILICON CARBIDE AND RELATED MATERIALS 2008, 2008, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, Switzerland. pp.203-206, ⟨10.4028/www.scientific.net/MSF.615-617.203⟩
Conference papers hal-03037530v1

Coherent quasiparticle transport in grain boundary junctions employing high-T-c superconductors

F. Tafuri , A. Tagliacozzo , D. Born , D. Stornaiuolo , E. Gambale et al.
MICROELECTRONICS JOURNAL, 2008, 39 (8), pp.1066-1069. ⟨10.1016/j.mejo.2007.07.094⟩
Journal articles hal-03037532v1

Spectroscopy of a single Si donor by the resonant tunnelling experiment

M. Baj , M. Gryglas , Benoit Jouault , Duncan Kennedy Maude , G. Faini et al.
Acta Physica Polonica A, 2006, 110 (2), pp.157-162. ⟨10.12693/APhysPolA.110.157⟩
Journal articles hal-03037535v1

2DEG spectroscopy with resonant tunneling through single impurity state

M. Cryglas , M. Baj , Benoit Jouault , A. Raymond , C. Chaubet et al.
International Journal of Nanoscience, Vol 2, No 6, Jul 2003, PO BOX 128 FARRER RD, SINGAPORE 9128, Singapore. pp.585-592
Conference papers hal-03037692v1

Application de l'analyse en ondelettes a l'etude de l'espace des phases nucleaire

Benoit Jouault
Nuclear Experiment [nucl-ex]. Université de Nantes, 1996. English. ⟨NNT : ⟩
Theses in2p3-00020550v1

Almost free standing Graphene on SiC(000-1) and SiC(11-20)

Bilal Jabakhanji , Nicolas Camara , Alessandra Caboni , Christophe Consejo , Benoit Jouault et al.
HETEROSIC & WASMPE 2011, 2011, KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland. pp.235+, ⟨10.4028/www.scientific.net/MSF.711.235⟩
Conference papers hal-03037523v1

Wavelet representation of the nuclear dynamics.

Benoit Jouault , F. Sebille , V. de La Mota
Nuclear Physics A, 1998, 268, pp.119
Journal articles in2p3-00000662v1
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Quantum Hall states in inverted HgTe quantum wells probed by transconductance fluctuations

S. Mantion , Colin Avogadri , Sergey S. Krishtopenko , S. Gebert , Sandra Ruffenach et al.
Physical Review B, 2020, 102 (7), pp.075302. ⟨10.1103/PhysRevB.102.075302⟩
Journal articles hal-02919868v1
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Unconventional reentrant quantum Hall effect in a HgTe/CdHgTe double quantum well

M. Yakunin , Sergey S. Krishtopenko , S. Podgornykh , M. Popov , V. Neverov et al.
Physical Review B, 2020, 102 (16), ⟨10.1103/PhysRevB.102.165305⟩
Journal articles hal-03036349v1

Epitaxial graphene growth and characterisation of buffer layer on SiC(0001)

Tianlin Wang , Jean-Roch Huntzinger , Jean-Manuel Decams , Maxime Bayle , Ahmed Azmi Zahab et al.
2D materials on substrates: growth & properties, Jan 2020, Villard de Lans, France
Conference papers hal-03040807v1

Tunneling and Coulomb Blockade in narrow GaAs/InGaAs/AlGaAs Hall bars in the quantum hall regime

O. Couturaud , Benoit Jouault , S. Bonifacie , C. Chaubet , D. Mailly et al.
PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA, Unknown Region. pp.663+
Conference papers hal-03037691v1

Ballistic effects up to room temperature in microscopic Hall sensors

Benoit Jouault , Wilfried Desrat , Olivier Couturaud , Sylvie Contreras , Dominique Mailly et al.
Journal of Applied Physics, 2009, 105 (7), pp.074504. ⟨10.1063/1.3103303⟩
Journal articles hal-00394184v1

Transport Properties of Disordered Graphene Layers

M. Gryglas-Borysiewicz , Benoit Jouault , J. Tworzydlo , S. Lewinska , W. Strupinski et al.
4th Workshop on Quantum Chaos and Localisation Phenomena, May 2009, Warsaw (POLAND), France. pp.838-840
Conference papers hal-00543287v1

Mesoscopic conductance fluctuations in YBa2Cu3O7−delta grain boundary junctions at low temperature

A. Tagliacozzo , F. Tafuri , E. Gambale , Benoit Jouault , D. Born et al.
Phys. Review B, 2009, 79, pp.24501. ⟨10.1103/PhysRevB.79.024501⟩
Journal articles hal-00407827v1

Growth of p-type monolayer graphene on SiC (0001) via sublimation at low argon pressure

Tianlin Wang , Perine Landois , Maxime Bayle , Abir Nachawaty , Wilfried Desrat et al.
GDR, Oct 2016, Oleron, France
Conference poster hal-01455032v1
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Room-Temperature Transport of Indirect Excitons in (Al,Ga)N/GaN Quantum Wells

Fedor Fedichkin , Thierry Guillet , Pierre Valvin , Benoit Jouault , Christelle Brimont et al.
Physical Review Applied, 2016, 6 (1), pp.014011. ⟨10.1103/PhysRevApplied.6.014011⟩
Journal articles hal-01353893v2

Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells.

François Chiaruttini , Thierry Guillet , Christelle Brimont , Thierry Bretagnon , Laetitia Doyennette et al.
International Conference on the Physics of Semiconductors, Jul 2018, Montpellier, France
Conference papers hal-01907806v1

Magnetotransport in a two-subband AlGaN/GaN heterostructure in the presence of mixed disorder

Wilfried Desrat , Magdalena Chmielowska , Sebastien Chenot , Yvon Cordier , Benoit Jouault et al.
European Physical Journal: Applied Physics, 2014, 68 (2), pp.20102. ⟨10.1051/epjap/2014140068⟩
Journal articles istex hal-01208531v1