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authIdHal_s : cristell-maneux

Compact Model of a Dual Gate CNTFET: Description and Circuit Application

Johnny Goguet , Sebastien Fregonese , Cristell Maneux , Thomas Zimmer
8th IEEE Conference on Nanotechnology, Aug 2008, Arlington, TEXAS, USA, United States. pp.Page(s):388 - 389, ⟨10.1109/TED.2007.902719⟩
Conference papers hal-00319955v1

Optically-Gated CNTFET compact model including source and drain Schottky barrier

Si-Yu Liao , Montassar Najari , Cristell Maneux , Sebastien Fregonese , Thomas Zimmer et al.
5th Conference on Design and Technology of Integrated Systems in Nanoscale Era, Mar 2010, Hammamet, Tunisia. pp.1
Conference papers hal-00584845v1

A Scalable Model for Temperature Dependent Thermal Resistance of SiGe HBTs

Kumar Sahoo Amit , Sebastien Fregonese , Mario Weib , Cristell Maneux , Thomas Zimmer et al.
IEEE Bipolar / BiCMOS Circuits and Technology Meeting, Sep 2013, Bordeaux, France
Conference papers hal-00905673v1

A Hicum SOI extension

Sébastien Fregonese , Gregory Avenier , Cristell Maneux , A. Chantre , Thomas Zimmer et al.
5th European HICUM Workshop, 2005, France
Conference papers hal-00181989v1

Modélisation compacte du transistor à nanotube de carbone

Cristell Maneux , Johnny Goguet , Thomas Zimmer
Journées thématiques du Club EEA, Nanoélectronique, Mar 2006, France
Conference papers hal-00181996v1

Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors

Nathalie Labat , Nathalie Malbert , Cristell Maneux , Andre Touboul
Microelectronics Reliability, 2004, 44, pp.1
Journal articles hal-00183088v1

Experimental analysis and 2D simulation of AlGaAs/GaAs HBT base leakage current

Cristell Maneux , Nathalie Labat , Nathalie Saysset , Andre Touboul , Yves Danto et al.
Microelectronics Reliability, 1997, 37, pp.1
Journal articles hal-00183096v1

Analysis of avalanche regime in InP HBT's using physical simulation - Implementation in a DC Model

Cristell Maneux , Jean-Christophe Martin , Nathalie Labat , Andre Touboul , Muriel Riet et al.
International Conference on Industrial Technology, 2004, Tunisia. pp.1
Conference papers hal-00183100v1

Qualitative Assessment of Epitaxial Graphene FETs on SiC Substrates via Pulsed Measurements and Temperature Variation

Mukherjee Chhandak , Sebastien Fregonese , Thomas Zimmer , H. Happy , David Mele et al.
Solid State Device Research Conference (ESSDERC), 2014, 44th European, Sep 2014, Venise, Italy. ⟨10.1109/ESSDERC.2014.6948821⟩
Conference papers hal-01090864v1

TCAD modeling of NPN-SI-BJT electrical performance improvement through SiGe extrinsic stress layer

Al-Sadi Mahmoud , Sébastien Fregonese , Cristell Maneux , Thomas Zimmer
Materials Science in Semiconductor Processing, 2010, 13 (5-6), pp. 344-348. ⟨10.1016/j.mssp.2011.03.002⟩
Journal articles istex hal-00671678v1

Avalanche Compact model featuring SiGe HBTs Characteristics up to BVCBO

Mathieu Jaoul , Didier Céli , Cristell Maneux
HICUM Workshop 2017, 2017, Dresden, Germany
Conference papers hal-02511645v1
Image document

0.4-µm InP/InGaAs DHBT with a 380-GHz fT > 600-GHz fMAX and BVCE0 > 4.5 V

Nil Davy , Virginie Nodjiadjim , Muriel Riet , Colin Mismer , Marina Deng et al.
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), Dec 2021, Monterey, United States. ⟨10.1109/BCICTS50416.2021.9682209⟩
Conference papers hal-03407761v1

Why neuromorphic computing need novel 3D technologies? A view from FVLLMONTI European project consortium (Invited)

Cristell Maneux , Mukherjee Chhandak , Marina Deng , Maeva Dubourg , Lucas Réveil et al.
High Performance Embedded Architecture and Compilation, Computing Systems Week, (HiPEAC CSW) Autumn 2021, Oct 2021, Lyon, France
Conference papers hal-03408071v1
Image document

Circuit Design Flow dedicated to 3D vertical nanowire FET

Cristell Maneux , Mukherjee Chhandak , Marina Deng , Bruno Neckel Wesling , Lucas Réveil et al.
IEEE Latin American Electron Devices Conference (LAEDC 2022), Jul 2022, Puebla, Mexico. ⟨10.1109/LAEDC54796.2022.9908233⟩
Conference papers hal-03765071v1

CNTFET modeling and reconfigurable logic circuit design

Ian O'Connor , Junchen Liu , Frédéric Gaffiot , Fabien Prégaldiny , Cristell Maneux et al.
IEEE Transactions on Circuits and Systems, 2007, 54 (11), pp.2365-2379. ⟨10.1109/TCSI.2007.907835⟩
Journal articles hal-00187137v1

An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

Jorge-Daniel Aguirre-Morales , Sebastien Fregonese , Chhandak Mukherjee , Cristell Maneux , Thomas Zimmer et al.
IEEE Transactions on Electron Devices, 2015, 62 (12), ⟨10.1109/TED.2015.2487243⟩
Journal articles hal-01235964v1

A versatile compact model for ballistic 1D transistor: GNRFET and CNTFET comparison

Sebastien Fregonese , Cristell Maneux , Thomas Zimmer
Solid-State Electronics, 2010, 54 (11), pp.1332-1338. ⟨10.1016/j.sse.2010.06.004⟩
Journal articles hal-00512742v1

Schottky barrier carbon nanotube transistor: Compact modeling, scaling study, and circuit design applications

Montassar Najari , Sebastien Fregonese , Cristell Maneux , H. Mnif , N. Masmoudi et al.
IEEE Transactions on Electron Devices, 2011, pp.195-205. ⟨10.1109/TED.2010.2084351⟩
Journal articles hal-00584876v1

Thermal aging model of InP/InGaAs/InP DHBT

S. Gosh , François Marc , Cristell Maneux , Brice Grandchamp , Gilles Amadou Koné et al.
Microelectronics Reliability, 2010, (9-11) (50), pp. 1554-1558. ⟨10.1016/j.microrel.2010.07.097⟩
Journal articles istex hal-00674295v1

TCAD setup for an advanced SiGe HBT technology applied to the HS, MV and HV transistor versions

Tommy Rosenbaum , Didier Céli , Michael Schröter , Cristell Maneux
Bipolar ArbeitsKreis, Nov 2016, München, Germany
Conference papers hal-02511643v1
Image document

Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz

Marina Deng , Chhandak Mukherjee , Chandan Yadav , Sebastien Fregonese , Thomas Zimmer et al.
IEEE Transactions on Electron Devices, 2020, 67 (12), pp.5441-5447. ⟨10.1109/TED.2020.3033834⟩
Journal articles hal-03088017v1

Anything else beyond CMOS?

Sebastien Fregonese , Maneux Cristell , Zimmer Thomas
Atelier CNRS : " Nouveaux paradigmes de traitement de l'information ", May 2011, Paris, France
Conference papers hal-00987253v1
Image document

Scalable compact modeling of trap generation near the EB spacer oxide interface in SiGe HBTs

Marine Couret , Mathieu Jaoul , François Marc , Chhandak Mukherjee , Didier Celi et al.
Solid-State Electronics, 2020, pp.107819. ⟨10.1016/j.sse.2020.107819⟩
Journal articles hal-02541991v1

80 ns/45 GHz Pulsed measurement system for DC and RF characterization of high speed microwave devices

Mario Weib , Sébastien Fregonese , Marco Santorelli , Kumar Sahoo Amit , Cristell Maneux et al.
Solid-State Electronics, 2013, 84, pp.74-82. ⟨10.1016/j.sse.2013.02.027⟩
Journal articles hal-00909009v1

Investigation on GaAs power MESFETs submitted to RF life-test by LF noise and drain current transient analysis

Nathalie Malbert , Benoit Lambert , Cristell Maneux , Nathalie Labat , Andre Touboul et al.
IEEE GaAs Reliability Workshop, 1999, États-Unis. pp.1
Conference papers hal-00183476v1

Experimental analysis and 2D simulation of AlGaAs/GaAs HBT base leakage current

Cristell Maneux , Nathalie Labat , Nathalie Saysset , Andre Touboul , Yves Danto et al.
ESREF'97, 1997, France. pp.1
Conference papers hal-00183483v1

Experimental procedure for the evaluation of GaAs-based HBT's reliability

Cristell Maneux , Nathalie Labat , Nathalie Malbert , Andre Touboul , Yves Danto et al.
Microelectronics Journal, 2001, 32, pp.1
Journal articles hal-00183093v1

Analysis of the surface base current drift in GaAs HBT's

Cristell Maneux , Nathalie Labat , Nathalie Saysset , Andre Touboul , Yves Danto et al.
Microelectronics Reliability, 1996, 36, pp.1
Journal articles hal-00183097v1

InP based HBT reliability

Cristell Maneux , Nathalie Labat , Andre Touboul , Muriel Riet , Myrtil L. Kahn et al.
Journées du GDR Nanoélectronique, 2004, France. pp.1
Conference papers hal-00183101v1

A compact model for SiGe HBT on thin film SOI

Sébastien Fregonese , Gregory Avenier , Cristell Maneux , A. Chantre , Thomas Zimmer et al.
IEEE Transactions on Electron Devices, 2006, 53 (2), pp.296-303
Journal articles hal-00181969v1