Epitaxial Growth of Sputtered Ultra-thin NbN Layers and Junctions on Sapphire
J.-C. Villegier
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S. Bouat
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P. Cavalier
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R. Setzu
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R. Espiau de Lamaestre
et al.
Journal articles
hal-00974758v1
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Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures
Stanislav Hasenöhrl
,
Prerna Chauhan
,
Edmund Dobročka
,
Roman Stoklas
,
Ľubomír Vančo
et al.
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hal-02334105v1
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TEM analysis of the dislocations mechanisms in III-V heterostructures grown by molecular beam epitaxy
Y. Wang
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M.P. Chauvat
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P. Ruterana
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L. Desplanque
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X. Wallart
et al.
Materials Research Society Spring Meeting, MRS Spring 2011, Symposium RR : Fundamental science of defects and microstructure in advanced materials for energy , 2011, San Francisco, CA, United States
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hal-00807156v1
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The high sensitivity of InN under rare earth ion implantation at medium range energy
B Lacroix
,
M P Chauvat
,
P Ruterana
,
K Lorenz
,
E Alves
et al.
Journal articles
hal-00636199v1
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PAMBE growth of (112¯ 2)-oriented GaN/AlN nanostructures on m-sapphire
L. Lahourcade
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J. Renard
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P. K. Kandaswamy
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B. Gayral
,
Marie-Pierre Chauvat
et al.
Microelectronics Journal , 2009, 40, pp.325-327
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hal-00438093v1
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Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy
L Desplanque
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M Fahed
,
X Han
,
V Chinni
,
D Troadec
et al.
Journal articles
hal-03779284v1
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Optical, structural and electrical characterization of pure ZnO films grown on p-type Si substrates by radiofrequency magnetron sputtering in different atmospheres
O. Melnichuk
,
L. Melnichuk
,
Ye Venger
,
C. Guillaume
,
M-P Chauvat
et al.
Journal articles
hal-03155451v1
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Caractérisations de films ultra minces NBN pour des applications HEB THZ
Bruno Guillet
,
Ö. Arthursson
,
Laurence Méchin
,
Marie-Pierre Chauvat
,
P. Ruterana
et al.
4èmes Journées dispositifs supraconducteurs , Jun 2007, Palaiseau, France
Conference papers
hal-00198521v1
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Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs
Mehdi Rzin
,
Jean-Marc Routoure
,
Bruno Guillet
,
Laurence Méchin
,
Ezgi Dogmus
et al.
EMRS Fall Meeting , Sep 2016, Varsovie, Poland
Conference poster
hal-01641574v1
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P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm
S. Valdueza-Felip
,
A. Ajay
,
L. Redaelli
,
M.P. Chauvat
,
P. Ruterana
et al.
Journal articles
hal-02166080v1
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Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics
L. Lahourcade
,
Julien Pernot
,
A. Wirthmüller
,
Marie-Pierre Chauvat
,
Pierre Ruterana
et al.
Journal articles
hal-00438206v1
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Molecular beam epitaxy of semipolar AlN(1122) and GaN(1122) on m-sapphire
Lise Lahourcade
,
Edith Bellet-Amalric
,
Eva Monroy
,
Marie-Pierre Chauvat
,
Pierre Ruterana
et al.
J Mater Sci: Mater Electron , 2008, 19, pp.805-809
Journal articles
cea-00372923v1
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Interface dislocations in InxGa1–xN/GaN heterostructures
Q.T. Li
,
A. Minj
,
M-P Chauvat
,
Jun Chen
,
Ruterana P.
et al.
Phys.Status Solidi A , 2016
Journal articles
hal-03351874v1
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Optimized ohmic contacts for InAlGaN/GaN HEMTs
Farah Bouazzaoui
,
Marie Pierre Chauvat
,
Magali Morales
,
Malek Zegaoui
,
F Medjdoub
et al.
International Symposium on Growth of III-Nitrides , Aug 2018, Warsaw, Poland
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hal-03287822v1
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SrTiO3 surface micro-structuring with swift heavy ions in grazing incidence geometry
R. Rahali
,
H. Lebius
,
A. Benyagoub
,
E. Gardes
,
S. Guillous
et al.
Journal articles
hal-03964618v1
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Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures
M. Fialho
,
S. Magalhaes
,
J. Rodrigues
,
M.P. Chauvat
,
P. Ruterana
et al.
Journal articles
hal-02340859v1
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Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer
Prerna Chauhan
,
S. Hasenöhrl
,
A. Minj
,
M.P. Chauvat
,
P. Ruterana
et al.
Journal articles
hal-02338791v1
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The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer
Ranim Mohamad
,
Marie Pierre Chauvat
,
Slawomir Kret
,
Piero Gamarra
,
Sylvain Delage
et al.
Journal articles
hal-03047705v1
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Interface dislocations in In x Ga 1- x N/GaN heterostructures
I. Belabbas
,
G. Nouet
,
Q. Li
,
A. Minj
,
M-P Chauvat
et al.
Journal articles
hal-03352834v1
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Atomic core structures associated to the threading dislocation with $\langle1\bar 100\rangle$ Burgers vector and [0001] line direction in GaN
Antoine Béré
,
Pierre Ruterana
,
Marie-Pierre Chauvat
,
Jean Koulidiati
Journal articles
insu-03611657v1
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The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells
Nicolas Chery
,
Thi Huong Ngo
,
M.P. Chauvat
,
B. Damilano
,
A Courville
et al.
Journal of Microscopy , 2018, Special Issue: Microscopy of Semi‐Conducting Materials, 268 (3), pp.305-313.
⟨10.1111/jmi.12657⟩
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hal-01691523v1
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High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics
S. Valdueza-Felip
,
E. Bellet-Amalric
,
A. Núñez-Cascajero
,
Y. Wang
,
M.-P. Chauvat
et al.
Journal articles
hal-02064247v1
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Extended defects in nitride layers, influence on the quantum wells and quantum dots
Pierre Ruterana
,
Marie-Pierre Chauvat
,
Yadira Arroyo-Rojas Dasilva
,
Huaping Lei
,
L. Lahourcade
et al.
Conference 7602 : Photonic West OPTO: Gallium Nitride Materials and Devices V , Jan 2010, San Francisco, United States. pp.760212
Conference papers
hal-00498128v1
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InAlGaN/GaN HEMTs at Cryogenic Temperatures
Ezgi Dogmus
,
Riad Kabouche
,
Sylvie Lepilliet
,
Astrid Linge
,
Malek Zegaoui
et al.
Journal articles
hal-03028345v1
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SrTiO3 surface micro-structuring with swift heavy ions in grazing incidence geometry
R. Rahali
,
Henning Lebius
,
A. Benyagoub
,
E. Gardes
,
S. Guillous
et al.
Journal articles
hal-03962254v1
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Properties of Ultra-Thin NbN Films for Membrane-Type THz HEB
B. Guillet
,
Ö. Arthursson
,
L. Méchin
,
M. N. Metzner
,
M. P. Chauvat
et al.
Journal articles
hal-03742926v1
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Transmission electron microscopy and XRD investigations of InAIN/GaN thin heterostructures for HEMT applications
Arantxa Vilalta-Clemente
,
Magali Morales
,
Marie-Pierre Chauvat
,
Yadira Arroyo-Rojas Dasilva
,
Marie A. Poisson
et al.
Conference 7602: Photonic West OPTO: Gallium Nitride Materials and Devices V , Jan 2010, San Francisco, United States. pp.76020K
Conference papers
hal-00491499v1
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Efficient blocking of planar defects by prismatic stacking faults in semipolar (112¯2)-GaN layers on m-sapphire by epitaxial lateral overgrowth
Bertrand Lacroix
,
Marie-Pierre Chauvat
,
Pierre Ruterana
,
G. Nataf
,
P. de Mierry
et al.
Applied Physics Letters , 2011, 98, pp.121916
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hal-00586001v1
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The structure of InAlGaN layers grown by metal organic vapour phase epitaxy : effects of threading dislocations and inversion domains from the GaN template
Hichem Ben Ammar
,
Albert Minj
,
Piero Gamarra
,
Cédric Lacam
,
Magali Morales
et al.
Journal of Microscopy , 2017
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hal-03351944v1
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Properties of Ultra-Thin NbN Films for Membrane-Type THz HEB
Bruno Guillet
,
Ö. Arthursson
,
Laurence Méchin
,
M.-N. Metzner
,
Marie-Pierre Chauvat
et al.
J Low Temp Phys , 2008, 151, pp.570-574
Journal articles
cea-00372235v1
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