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Epitaxial Growth of Sputtered Ultra-thin NbN Layers and Junctions on Sapphire

J.-C. Villegier , S. Bouat , P. Cavalier , R. Setzu , R. Espiau de Lamaestre et al.
IEEE Transactions on Applied Superconductivity, 2009, 19 (3), pp.3375-3378. ⟨10.1109/TASC.2009.2019243⟩
Journal articles hal-00974758v1

Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures

Stanislav Hasenöhrl , Prerna Chauhan , Edmund Dobročka , Roman Stoklas , Ľubomír Vančo et al.
Applied Physics Express, 2018, 12 (1), pp.014001. ⟨10.7567/1882-0786/aaef41⟩
Journal articles hal-02334105v1

TEM analysis of the dislocations mechanisms in III-V heterostructures grown by molecular beam epitaxy

Y. Wang , M.P. Chauvat , P. Ruterana , L. Desplanque , X. Wallart et al.
Materials Research Society Spring Meeting, MRS Spring 2011, Symposium RR : Fundamental science of defects and microstructure in advanced materials for energy, 2011, San Francisco, CA, United States
Conference papers hal-00807156v1
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The high sensitivity of InN under rare earth ion implantation at medium range energy

B Lacroix , M P Chauvat , P Ruterana , K Lorenz , E Alves et al.
Journal of Physics D: Applied Physics, 2011, 44 (29), pp.295402. ⟨10.1088/0022-3727/44/29/295402⟩
Journal articles hal-00636199v1

PAMBE growth of (112¯ 2)-oriented GaN/AlN nanostructures on m-sapphire

L. Lahourcade , J. Renard , P. K. Kandaswamy , B. Gayral , Marie-Pierre Chauvat et al.
Microelectronics Journal, 2009, 40, pp.325-327
Journal articles hal-00438093v1

Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy

L Desplanque , M Fahed , X Han , V Chinni , D Troadec et al.
Nanotechnology, 2014, 25 (46), pp.465302. ⟨10.1088/0957-4484/25/46/465302⟩
Journal articles hal-03779284v1

Optical, structural and electrical characterization of pure ZnO films grown on p-type Si substrates by radiofrequency magnetron sputtering in different atmospheres

O. Melnichuk , L. Melnichuk , Ye Venger , C. Guillaume , M-P Chauvat et al.
Semiconductor Science and Technology, 2020, 35 (9), pp.095034. ⟨10.1088/1361-6641/ab9397⟩
Journal articles hal-03155451v1

Caractérisations de films ultra minces NBN pour des applications HEB THZ

Bruno Guillet , Ö. Arthursson , Laurence Méchin , Marie-Pierre Chauvat , P. Ruterana et al.
4èmes Journées dispositifs supraconducteurs, Jun 2007, Palaiseau, France
Conference papers hal-00198521v1

Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs

Mehdi Rzin , Jean-Marc Routoure , Bruno Guillet , Laurence Méchin , Ezgi Dogmus et al.
EMRS Fall Meeting, Sep 2016, Varsovie, Poland
Conference poster hal-01641574v1

P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm

S. Valdueza-Felip , A. Ajay , L. Redaelli , M.P. Chauvat , P. Ruterana et al.
Solar Energy Materials and Solar Cells, 2017, 160, pp.355-360. ⟨10.1016/j.solmat.2016.10.007⟩
Journal articles hal-02166080v1

Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics

L. Lahourcade , Julien Pernot , A. Wirthmüller , Marie-Pierre Chauvat , Pierre Ruterana et al.
Applied Physics Letters, 2009, 95 (17), pp.171908. ⟨10.1063/1.3256189⟩
Journal articles hal-00438206v1

Molecular beam epitaxy of semipolar AlN(1122) and GaN(1122) on m-sapphire

Lise Lahourcade , Edith Bellet-Amalric , Eva Monroy , Marie-Pierre Chauvat , Pierre Ruterana et al.
J Mater Sci: Mater Electron, 2008, 19, pp.805-809
Journal articles cea-00372923v1

Interface dislocations in InxGa1–xN/GaN heterostructures

Q.T. Li , A. Minj , M-P Chauvat , Jun Chen , Ruterana P. et al.
Phys.Status Solidi A, 2016
Journal articles hal-03351874v1

Optimized ohmic contacts for InAlGaN/GaN HEMTs

Farah Bouazzaoui , Marie Pierre Chauvat , Magali Morales , Malek Zegaoui , F Medjdoub et al.
International Symposium on Growth of III-Nitrides, Aug 2018, Warsaw, Poland
Conference papers hal-03287822v1

SrTiO3 surface micro-structuring with swift heavy ions in grazing incidence geometry

R. Rahali , H. Lebius , A. Benyagoub , E. Gardes , S. Guillous et al.
Materialia, 2023, 27, pp.101696. ⟨10.1016/j.mtla.2023.101696⟩
Journal articles hal-03964618v1

Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures

M. Fialho , S. Magalhaes , J. Rodrigues , M.P. Chauvat , P. Ruterana et al.
Surface and Coatings Technology, 2018, 355, pp.29-39. ⟨10.1016/j.surfcoat.2018.02.008⟩
Journal articles hal-02340859v1

Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

Prerna Chauhan , S. Hasenöhrl , A. Minj , M.P. Chauvat , P. Ruterana et al.
Applied Surface Science, 2020, 502, pp.144086. ⟨10.1016/j.apsusc.2019.144086⟩
Journal articles hal-02338791v1
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The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer

Ranim Mohamad , Marie Pierre Chauvat , Slawomir Kret , Piero Gamarra , Sylvain Delage et al.
Journal of Applied Physics, 2019, 125 (21), pp.215707. ⟨10.1063/1.5088109⟩
Journal articles hal-03047705v1

Interface dislocations in In x Ga 1- x N/GaN heterostructures

I. Belabbas , G. Nouet , Q. Li , A. Minj , M-P Chauvat et al.
physica status solidi (a), 2017, 214 (4), pp.1600442. ⟨10.1002/pssa.201600442⟩
Journal articles hal-03352834v1

Atomic core structures associated to the threading dislocation with $\langle1\bar 100\rangle$ Burgers vector and [0001] line direction in GaN

Antoine Béré , Pierre Ruterana , Marie-Pierre Chauvat , Jean Koulidiati
Japanese Journal of Applied Physics, 2013, 52, pp.11NG06. ⟨10.7567/JJAP.52.11NG06⟩
Journal articles insu-03611657v1

The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells

Nicolas Chery , Thi Huong Ngo , M.P. Chauvat , B. Damilano , A Courville et al.
Journal of Microscopy, 2018, Special Issue: Microscopy of Semi‐Conducting Materials, 268 (3), pp.305-313. ⟨10.1111/jmi.12657⟩
Journal articles hal-01691523v1

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

S. Valdueza-Felip , E. Bellet-Amalric , A. Núñez-Cascajero , Y. Wang , M.-P. Chauvat et al.
Journal of Applied Physics, 2014, 116 (23), pp.233504. ⟨10.1063/1.4903944⟩
Journal articles hal-02064247v1

Extended defects in nitride layers, influence on the quantum wells and quantum dots

Pierre Ruterana , Marie-Pierre Chauvat , Yadira Arroyo-Rojas Dasilva , Huaping Lei , L. Lahourcade et al.
Conference 7602 : Photonic West OPTO: Gallium Nitride Materials and Devices V, Jan 2010, San Francisco, United States. pp.760212
Conference papers hal-00498128v1
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InAlGaN/GaN HEMTs at Cryogenic Temperatures

Ezgi Dogmus , Riad Kabouche , Sylvie Lepilliet , Astrid Linge , Malek Zegaoui et al.
Electronics, 2016, 5 (2), pp.31. ⟨10.3390/electronics5020031⟩
Journal articles hal-03028345v1

SrTiO3 surface micro-structuring with swift heavy ions in grazing incidence geometry

R. Rahali , Henning Lebius , A. Benyagoub , E. Gardes , S. Guillous et al.
Materialia, 2023, 27, pp.101696. ⟨10.1016/j.mtla.2023.101696⟩
Journal articles hal-03962254v1

Properties of Ultra-Thin NbN Films for Membrane-Type THz HEB

B. Guillet , Ö. Arthursson , L. Méchin , M. N. Metzner , M. P. Chauvat et al.
Journal of Low Temperature Physics, 2008, 151, pp.570-574. ⟨10.1007/s10909-007-9694-1⟩
Journal articles hal-03742926v1

Transmission electron microscopy and XRD investigations of InAIN/GaN thin heterostructures for HEMT applications

Arantxa Vilalta-Clemente , Magali Morales , Marie-Pierre Chauvat , Yadira Arroyo-Rojas Dasilva , Marie A. Poisson et al.
Conference 7602: Photonic West OPTO: Gallium Nitride Materials and Devices V, Jan 2010, San Francisco, United States. pp.76020K
Conference papers hal-00491499v1

Efficient blocking of planar defects by prismatic stacking faults in semipolar (112¯2)-GaN layers on m-sapphire by epitaxial lateral overgrowth

Bertrand Lacroix , Marie-Pierre Chauvat , Pierre Ruterana , G. Nataf , P. de Mierry et al.
Applied Physics Letters, 2011, 98, pp.121916
Journal articles hal-00586001v1

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy : effects of threading dislocations and inversion domains from the GaN template

Hichem Ben Ammar , Albert Minj , Piero Gamarra , Cédric Lacam , Magali Morales et al.
Journal of Microscopy, 2017
Journal articles hal-03351944v1

Properties of Ultra-Thin NbN Films for Membrane-Type THz HEB

Bruno Guillet , Ö. Arthursson , Laurence Méchin , M.-N. Metzner , Marie-Pierre Chauvat et al.
J Low Temp Phys, 2008, 151, pp.570-574
Journal articles cea-00372235v1