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authIdHal_s : marco-pala
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Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism

Marco G. Pala , David Esseni
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.3-6, ⟨10.23919/SISPAD49475.2020.9241641⟩
Conference papers hal-03029922v1
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Full quantum simulation of Shockley–Read–Hall recombination in p-i-n and tunnel diodes

A. Pilotto , P. Dollfus , J. Saint-Martin , Marco G. Pala
Solid-State Electronics, 2022, 198, pp.108469. ⟨10.1016/j.sse.2022.108469⟩
Journal articles hal-03818605v1
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Full band quantum transport modelling with EP and NEGF methods; application to nanowire transistors

Marco Pala , D. Esseni
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2019, Udine, Italy. pp.1-4, ⟨10.1109/SISPAD.2019.8870406⟩
Conference papers hal-02404574v1

Transport models based on NEGF and empirical pseudopotentials: a computationally viable method for self-consistent simulation of nanoscale devices

Marco Pala , Oves Badami , David Esseni
2018 IEEE International Electron Devices Meeting (IEDM), Dec 2018, San Francisco, United States. pp.33.1.1-33.1.4, ⟨10.1109/IEDM.2018.8614613⟩
Conference papers hal-02350969v1
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Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices

Marco Pala , David Esseni
Journal of Applied Physics, 2019, 126 (5), pp.055703. ⟨10.1063/1.5109187⟩
Journal articles hal-02350925v1

Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs

S. Poli , M.G. Pala , T. Poiroux , S. Deleonibus , G. Baccarani et al.
IEEE Transactions on Electron Devices, 2008, 55 (11), pp.2968-2976
Journal articles hal-00391742v1

Quantum simulation of mobility and current enhancement in sub-14nm strained SiGe FD-pMOSFETs

Marco G. Pala , Barbara de Salvo , P. Morin , Gérard Ghibaudo
GRDi CNRS Mecano: Mechanical Issues for Advanced Electron Devices Workshop, M. Mouis, O. Thomas, E. Zschech, C. Paitel, Jun 2015, Grenoble, France
Conference papers hal-02068476v1

Full-three dimensional quantum approach to evaluate the surface-roughness-limited magnetoresistance mobility in SNWT

C. Buran , M. G. Pala , M. Bescond , M. Mouis
Journal of Computational Electronics, 2008, 7 (3, 1569-1572)
Journal articles hal-00391739v1

Superconducting proximity effect in interacting quantum dots revealed by shot noise

A. Braggio , M.G. Pala , M. Governale , J. König
Solid State Communications, 2011, 151, pp.155. ⟨10.1016/j.ssc.2010.10.043⟩
Journal articles hal-00596337v1

Full-3D real-space treatment of surface roughness in double gate MOSFETs

C. Buran , M. G. Pala , S. Poli , M. Mouis
Int. Conference on Ultimate Integration of Silicon, Aachen,, Mar 2009, Germany. pp.47-50
Conference papers hal-00604232v1

(Invited) Modeling the Influence of Interface Traps on the Transfer Characteristics of InAs Tunnel-FETs and MOSFETs

Marco Pala , David Esseni
225th ECS : Dielectrics for Nanosystems 6: Materials Science, Processing, Reliabilty and Manufacturing, D. Misra, Y. Obeng, T. Chikyow, H. Iwai, Z. Chen and D. Bauza, May 2014, Orlando, United States
Conference papers hal-02065948v1
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Coherent tunnelling across a quantum point contact in the quantum Hall regime

F. Martins , S. Faniel , B. Rosenow , Hermann Sellier , Serge Huant et al.
Scientific Reports, 2013, 3, pp.1416. ⟨10.1038/srep01416⟩
Journal articles hal-00932989v1

Vertical GaSb/AlSb/InAs Heterojunction Tunnel-FETs: A Full Quantum Study

Corentin Grillet , Alessandro Cresti , Marco Pala
IEEE Transactions on Electron Devices, 2018, 65 (7), pp.3038-3044. ⟨10.1109/TED.2018.2834307⟩
Journal articles hal-01964683v1
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α−As2Te3 as a platform for the exploration of the electronic band structure of single layer β−tellurene

Lama Khalil , Pietro Maria Forcella , Geoffroy Kremer , Federico Bisti , Julien Chaste et al.
Physical Review B, 2022, 106 (12), pp.125152. ⟨10.1103/physrevb.106.125152⟩
Journal articles hal-03865011v1
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A new transport phenomenon in nanostructures: A mesoscopic analog of the Braess paradox encountered in road networks

Marco Pala , Hermann Sellier , Benoit Hackens , Frederico Martins , Vincent Bayot et al.
Nanoscale Research Letters, 2012, 7, pp.472. ⟨10.1186/1556-276X-7-472⟩
Journal articles hal-00932991v1

Nanowire Devices

Gérard Ghibaudo , Sylvain Barraud , Mikaël Cassé , Xin Peng Wang , Guo Qiang Lo et al.
Ed. by F. Balestra. Beyond‐CMOS Nanodevices 2, Wiley-ISTE, pp.25-95, 2014, Nanoscience and Nanotechnology Series, 978-1-84821-655-6 978-1-11898-513-7. ⟨10.1002/9781118985137.ch2⟩
Book sections hal-02051240v1

(Invited) Challenges and Opportunities in the Design of Tunnel FETs: Materials, Device Architectures, and Defects

D. Esseni , M. Pala , A. Revelant , P. Palestri , L. Selmi et al.
ECS Transactions, 2014, 64 (6), pp.581-595. ⟨10.1149/06406.0581ecst⟩
Journal articles hal-02065983v1

Intrinsic Cut Off Frequency of Si and GaAs Based Resonant Tunneling Diodes

E. Buccafurri , R. Clerc , F. Calmon , M. Pala , A. Poncet et al.
Int. Conference on Ultimate Integration of Silicon, Aachen, Mar 2009, Germany. pp.91-94
Conference papers hal-00604239v1

Design Options for Hetero-Junction Tunnel FETs with High on Current and Steep Sub-VT Slope

S. Brocard , M.G. Pala , D. Esseni
IEDM 2013, Dec 2013, Washington, United States. pp.128-131, ⟨10.1109/IEDM.2013.6724567⟩
Conference papers hal-01074151v1

Nanowires applications in the More Moore/More-Than-Moore perspectives

M. Mouis , J. W. Lee , M. Mongillo , M. Pala , A. Cresti et al.
E-MRS E-MRS 2013 Spring Meeting, Symposium K: Physics and technology of advanced extra functionality CMOS-based devices, May 2013, Strasbourg, France
Conference papers hal-01020753v1

Interface Traps in InAs Nanowire Tunnel FETs and MOSFET -Part II: Comparative Analysis and Trap-Induced Variability

D. Esseni , M.G. Pala
IEEE Transactions on Electron Devices, 2013, 60 (9), pp.2802-2807. ⟨10.1109/TED.2013.2274197⟩
Journal articles hal-01017503v1

Influence of ionized impurities in Silicon Nanowire Transistors

M. Bescond , M. Lannoo , L. Raymond , Fabienne Michelini , M. G. Pala et al.
Proceedings of IWCE 2009, IEEE Conference Proceedings CFP09462-PRT, ISBN 978-1-4244-3926-3, 2009, Beijing, China. pp.137-140
Conference papers hal-00603874v1

Scanning gate transconductance microscopy and spectroscopy of a mesoscopic ring

B. Hackens , F. Martins , S. Faniel , V. Bayot , M. Pala et al.
American Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States
Conference papers hal-00579035v1

Scanning gate spectroscopy of a quantum Hall island near a quantum point contact

B. Hackens , F. Martins , S. Faniel , V. Bayot , B. Rosenow et al.
American Physical Society March Meeting, APS March Meeting 2013, 2013, Baltimore, MD, United States
Conference papers hal-00811773v1
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A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator

Daniel Lizzit , Pedram Khakbaz , Francesco Driussi , Marco G. Pala , David Esseni et al.
Solid-State Electronics, 2022, 194, pp.108365. ⟨10.1016/j.sse.2022.108365⟩
Journal articles hal-03793953v1
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Full Band Monte Carlo simulation of phonon transfer at interfaces

N.D. Le , B. Davier , P. Dollfus , Marco G. Pala , A. Bournel et al.
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.27-30, ⟨10.23919/SISPAD49475.2020.9241629⟩
Conference papers hal-03029928v1

A review of selected topics in physics based modeling for tunnel field-effect transistors

Marco G. Pala , David Esseni , Pierpaolo Palestri , Cem Alper , Tommaso Rollo et al.
Semiconductor Science and Technology, 2017, 32 (8), pp.083005. ⟨10.1088/1361-6641/aa6fca⟩
Journal articles hal-02351119v1

VDD scaling of ultra-thin InAs MOSFETs: A full-quantum study

C. Grillet , M. Pala
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.108-111, ⟨10.1109/ULIS.2016.7440064⟩
Conference papers hal-02063643v1
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Imaging electron wave functions inside open quantum rings

F. Martins , B. Hackens , Marco G. Pala , Thierry Ouisse , Hermann Sellier et al.
Physical Review Letters, 2007, 99, pp.136807. ⟨10.1103/PhysRevLett.99.136807⟩
Journal articles hal-00193197v1
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Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys

Cyrine Ernandes , Lama Khalil , Hela Almabrouk , Debora Pierucci , Biyuan Zheng et al.
npj 2D Materials and Applications, 2021, 5, pp.7. ⟨10.1038/s41699-020-00187-9⟩
Journal articles hal-03450806v1