Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism
Marco G. Pala
,
David Esseni
Conference papers
hal-03029922v1
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Full quantum simulation of Shockley–Read–Hall recombination in p-i-n and tunnel diodes
A. Pilotto
,
P. Dollfus
,
J. Saint-Martin
,
Marco G. Pala
Journal articles
hal-03818605v1
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Full band quantum transport modelling with EP and NEGF methods; application to nanowire transistors
Marco Pala
,
D. Esseni
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) , Sep 2019, Udine, Italy. pp.1-4,
⟨10.1109/SISPAD.2019.8870406⟩
Conference papers
hal-02404574v1
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Transport models based on NEGF and empirical pseudopotentials: a computationally viable method for self-consistent simulation of nanoscale devices
Marco Pala
,
Oves Badami
,
David Esseni
2018 IEEE International Electron Devices Meeting (IEDM) , Dec 2018, San Francisco, United States. pp.33.1.1-33.1.4,
⟨10.1109/IEDM.2018.8614613⟩
Conference papers
hal-02350969v1
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Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices
Marco Pala
,
David Esseni
Journal articles
hal-02350925v1
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Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs
S. Poli
,
M.G. Pala
,
T. Poiroux
,
S. Deleonibus
,
G. Baccarani
et al.
IEEE Transactions on Electron Devices , 2008, 55 (11), pp.2968-2976
Journal articles
hal-00391742v1
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Quantum simulation of mobility and current enhancement in sub-14nm strained SiGe FD-pMOSFETs
Marco G. Pala
,
Barbara de Salvo
,
P. Morin
,
Gérard Ghibaudo
GRDi CNRS Mecano: Mechanical Issues for Advanced Electron Devices Workshop , M. Mouis, O. Thomas, E. Zschech, C. Paitel, Jun 2015, Grenoble, France
Conference papers
hal-02068476v1
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Full-three dimensional quantum approach to evaluate the surface-roughness-limited magnetoresistance mobility in SNWT
C. Buran
,
M. G. Pala
,
M. Bescond
,
M. Mouis
Journal of Computational Electronics , 2008, 7 (3, 1569-1572)
Journal articles
hal-00391739v1
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Superconducting proximity effect in interacting quantum dots revealed by shot noise
A. Braggio
,
M.G. Pala
,
M. Governale
,
J. König
Journal articles
hal-00596337v1
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Full-3D real-space treatment of surface roughness in double gate MOSFETs
C. Buran
,
M. G. Pala
,
S. Poli
,
M. Mouis
Int. Conference on Ultimate Integration of Silicon, Aachen, , Mar 2009, Germany. pp.47-50
Conference papers
hal-00604232v1
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(Invited) Modeling the Influence of Interface Traps on the Transfer Characteristics of InAs Tunnel-FETs and MOSFETs
Marco Pala
,
David Esseni
225th ECS : Dielectrics for Nanosystems 6: Materials Science, Processing, Reliabilty and Manufacturing , D. Misra, Y. Obeng, T. Chikyow, H. Iwai, Z. Chen and D. Bauza, May 2014, Orlando, United States
Conference papers
hal-02065948v1
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Coherent tunnelling across a quantum point contact in the quantum Hall regime
F. Martins
,
S. Faniel
,
B. Rosenow
,
Hermann Sellier
,
Serge Huant
et al.
Journal articles
hal-00932989v1
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Vertical GaSb/AlSb/InAs Heterojunction Tunnel-FETs: A Full Quantum Study
Corentin Grillet
,
Alessandro Cresti
,
Marco Pala
Journal articles
hal-01964683v1
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α−As2Te3 as a platform for the exploration of the electronic band structure of single layer β−tellurene
Lama Khalil
,
Pietro Maria Forcella
,
Geoffroy Kremer
,
Federico Bisti
,
Julien Chaste
et al.
Journal articles
hal-03865011v1
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A new transport phenomenon in nanostructures: A mesoscopic analog of the Braess paradox encountered in road networks
Marco Pala
,
Hermann Sellier
,
Benoit Hackens
,
Frederico Martins
,
Vincent Bayot
et al.
Journal articles
hal-00932991v1
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Nanowire Devices
Gérard Ghibaudo
,
Sylvain Barraud
,
Mikaël Cassé
,
Xin Peng Wang
,
Guo Qiang Lo
et al.
Ed. by F. Balestra.
Beyond‐CMOS Nanodevices 2 , Wiley-ISTE, pp.25-95, 2014, Nanoscience and Nanotechnology Series, 978-1-84821-655-6 978-1-11898-513-7.
⟨10.1002/9781118985137.ch2⟩
Book sections
hal-02051240v1
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(Invited) Challenges and Opportunities in the Design of Tunnel FETs: Materials, Device Architectures, and Defects
D. Esseni
,
M. Pala
,
A. Revelant
,
P. Palestri
,
L. Selmi
et al.
Journal articles
hal-02065983v1
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Intrinsic Cut Off Frequency of Si and GaAs Based Resonant Tunneling Diodes
E. Buccafurri
,
R. Clerc
,
F. Calmon
,
M. Pala
,
A. Poncet
et al.
Int. Conference on Ultimate Integration of Silicon, Aachen , Mar 2009, Germany. pp.91-94
Conference papers
hal-00604239v1
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Design Options for Hetero-Junction Tunnel FETs with High on Current and Steep Sub-VT Slope
S. Brocard
,
M.G. Pala
,
D. Esseni
Conference papers
hal-01074151v1
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Nanowires applications in the More Moore/More-Than-Moore perspectives
M. Mouis
,
J. W. Lee
,
M. Mongillo
,
M. Pala
,
A. Cresti
et al.
E-MRS E-MRS 2013 Spring Meeting, Symposium K: Physics and technology of advanced extra functionality CMOS-based devices , May 2013, Strasbourg, France
Conference papers
hal-01020753v1
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Interface Traps in InAs Nanowire Tunnel FETs and MOSFET -Part II: Comparative Analysis and Trap-Induced Variability
D. Esseni
,
M.G. Pala
Journal articles
hal-01017503v1
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Influence of ionized impurities in Silicon Nanowire Transistors
M. Bescond
,
M. Lannoo
,
L. Raymond
,
Fabienne Michelini
,
M. G. Pala
et al.
Proceedings of IWCE 2009, IEEE Conference Proceedings CFP09462-PRT, ISBN 978-1-4244-3926-3 , 2009, Beijing, China. pp.137-140
Conference papers
hal-00603874v1
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Scanning gate transconductance microscopy and spectroscopy of a mesoscopic ring
B. Hackens
,
F. Martins
,
S. Faniel
,
V. Bayot
,
M. Pala
et al.
American Physical Society March Meeting, APS March Meeting 2011 , 2011, Dallas, TX, United States
Conference papers
hal-00579035v1
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Scanning gate spectroscopy of a quantum Hall island near a quantum point contact
B. Hackens
,
F. Martins
,
S. Faniel
,
V. Bayot
,
B. Rosenow
et al.
American Physical Society March Meeting, APS March Meeting 2013 , 2013, Baltimore, MD, United States
Conference papers
hal-00811773v1
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A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator
Daniel Lizzit
,
Pedram Khakbaz
,
Francesco Driussi
,
Marco G. Pala
,
David Esseni
et al.
Journal articles
hal-03793953v1
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Full Band Monte Carlo simulation of phonon transfer at interfaces
N.D. Le
,
B. Davier
,
P. Dollfus
,
Marco G. Pala
,
A. Bournel
et al.
Conference papers
hal-03029928v1
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A review of selected topics in physics based modeling for tunnel field-effect transistors
Marco G. Pala
,
David Esseni
,
Pierpaolo Palestri
,
Cem Alper
,
Tommaso Rollo
et al.
Journal articles
hal-02351119v1
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VDD scaling of ultra-thin InAs MOSFETs: A full-quantum study
C. Grillet
,
M. Pala
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) , Jan 2016, Vienna, Austria. pp.108-111,
⟨10.1109/ULIS.2016.7440064⟩
Conference papers
hal-02063643v1
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Imaging electron wave functions inside open quantum rings
F. Martins
,
B. Hackens
,
Marco G. Pala
,
Thierry Ouisse
,
Hermann Sellier
et al.
Journal articles
hal-00193197v1
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Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys
Cyrine Ernandes
,
Lama Khalil
,
Hela Almabrouk
,
Debora Pierucci
,
Biyuan Zheng
et al.
Journal articles
hal-03450806v1
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