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Caractéristiques électriques des transistors en technologie InAlN/AlN/GaN pour les applications en bande S
Jérémy Dufraisse
,
Guillaume Callet
,
Stéphane Piotrowicz
,
Eric Chartier
,
Olivier Jardel
et al.
17ème Journées Nationales Microondes, May 2011, Brest, France. pp.1-4
Conference papers
hal-00918189v1
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Low Frequency Parasitic Effects in RF Transistors and their Impact on Power Amplifier Performances
Raymond Quéré
,
Raphaël Sommet
,
Philippe Bouysse
,
Tibault Reveyrand
,
Denis Barataud
et al.
Conference papers
hal-00707903v1
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Système expérimental d'étude de la Pré-distortion d'un amplificateur de puissance commandé en polarisation
Mohamad Saad El Dine
,
Guillaume Neveux
,
Denis Barataud
,
Tibault Reveyrand
,
Philippe Bouysse
et al.
17èmes Journées Nationales Microondes, May 2011, Brest, France
Conference papers
hal-00708603v1
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Simulation d'un limiteur bande S forte puissance a l'aide d'un nouveau modèle non-linéaire de diodes p-i-n.
Emmanuel Gatard
,
Philippe Bouysse
,
Raphaël Sommet
,
Raymond Quéré
,
M. Stanislawiak
et al.
15èmes Journées Nationales Microondes., May 2007, TOULOUSE, France
Conference papers
hal-00196680v1
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High Switching Speed DC-DC Architecture Based on Normally-On Wide Bandgap HEMT Devices
Anthony Disserand
,
Olivier Jardel
,
Philippe Bouysse
,
Audrey Martin
,
Raymond Quéré
et al.
8th Wide Bandgap Semiconductors and Components Workshop, ESA-ECSAT, Sep 2016, Harwell, United Kingdom
Conference papers
hal-01432516v1
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Design of an efficient and wideband two-stage GaN-HEMT power modulator
Abhijeet Dasgupta
,
Philippe Bouysse
,
Jean-Michel Nebus
,
Raymond Quéré
8th Wide Bandgap Semiconductors and Components Workshop, ESA-ECSAT, Sep 2016, Harwell, United Kingdom
Conference papers
hal-01432534v1
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GaN based supply modulator for energy efficiency enhancement of active phased array antennas
Arnaud Délias
,
Pierre Medrel
,
Audrey Martin
,
Philippe Bouysse
,
Jean-Michel Nebus
et al.
International Workshop on integrated non linear microwave and millimeter wave circuits - INMMIC, Apr 2014, Belgium. pp.1-4
Conference papers
hal-01021946v1
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Experimental study on effect of second-harmonic injection at input of classes F and F-1 GaN power amplifiers
Alaaeddine Ramadan
,
Tibault Reveyrand
,
Audrey Martin
,
Jean-Michel Nebus
,
Philippe Bouysse
et al.
Journal articles
hal-00580592v1
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Low consumption and High Frequency GaN based Gate Driver Circuit with Integrated PWM
Arnaud Délias
,
Audrey Martin
,
Philippe Bouysse
,
Jean-Michel Nebus
,
Raymond Quéré
et al.
Journal articles
hal-01243081v1
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Conception d'un modulateur de puissance large-bande à deux étages en technologie GaN
Abhijeet Dasgupta
,
Anthony Disserand
,
Tibault Reveyrand
,
Pierre Medrel
,
Philippe Bouysse
et al.
XXèmes Journées Nationales Microondes, May 2017, Saint-Malo, France
Conference papers
hal-01525476v1
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A new design approach of high efficiency S-band 25 W mixerless power modulator based on high voltage 50V GaN-HEMT technology
Abhijeet Dasgupta
,
Arnaud Délias
,
Pierre Medrel
,
Philippe Bouysse
,
Jean-Michel Nebus
et al.
Conference papers
hal-01553102v1
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Efficiency Enhancement of GaN Power Amplifiers over Wide Bandwidth by an Active Control of Gate Source Waveforms
Alaaeddine Ramadan
,
Tibault Reveyrand
,
Audrey Martin
,
Jean-Michel Nebus
,
Philippe Bouysse
et al.
5th Space Agency - MOD Round Table Workshop on GaN Component Technologies, ESTEC, Sep 2010, Noordwijk, Netherlands
Conference papers
hal-00643335v1
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High Speed and Highly Efficient S-Band 20 W Mixerless Vector Power Modulator
Abhijeet Dasgupta
,
Anthony Disserand
,
Jean-Michel Nebus
,
Audrey Martin
,
Philippe Bouysse
et al.
International Microwave Symposium (IMS 2017), IEEE-MTT(S), Jun 2017, Honolulu, HI, United States
Conference papers
hal-01541018v1
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Analyse comparative des classes en commutation (F, F-1, E) pour l'amplification de puissance en technologie GaN
Alaaeddine Ramadan
,
D. Sardin
,
Tibault Reveyrand
,
Jean-Michel Nebus
,
Philippe Bouysse
et al.
Journées Nationales Micro-ondes (JNM) (2009), May 2009, Grenoble, France. pp. 1C3-1C3
Conference papers
hal-00758692v1
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Optimisation du fonctionnement d'un amplificateur Doherty par glissement de polarisation
N Dubuc
,
Claude Duvanaud
,
Philippe Bouysse
,
Jean-Marie Paillot
Proc. Journées Nationales Microondes (JNM 2003), May 2003, Lille, France. pp.1C1
Conference papers
hal-03759367v1
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Efficiency enhancement ogf GaN power HEMTs by controlling gate source voltage waveform shape
Alaaeddine Ramadan
,
Audrey Martin
,
Tibault Reveyrand
,
Jean-Michel Nebus
,
Philippe Bouysse
et al.
European Microwave Conference, 2009, Rome, Italy
Conference papers
hal-00435747v1
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Nouvelle architecture Doherty symétrique: Conception d'un amplificateur HEMT GaN 10 Watts bande X
Cyril Lagarde
,
Philippe Bouysse
,
Jean-Michel Nebus
,
Stéphane Forestier
,
J.F. Villemazet
et al.
15èmes Journées Nationales Microondes, May 2007, TOULOUSE, France
Conference papers
hal-00197193v1
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Cellule de commutation de puissance à transistors à effet de champ de type normalement conducteur.
Olivier Jardel
,
Raymond Quéré
,
Stéphane Piotrowicz
,
Philippe Bouysse
,
Sylvain L. Delage
et al.
France, N° de brevet: FR3020222. 2015
Patents
hal-01284083v1
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Normally-off AlGaN/GaN Recessed MOS-HEMTs on Normally-on Epitaxial Structures for Microwave Power Applications
Linh Trinh Xuan
,
Raphaël Aubry
,
Olivier Patard
,
Jean-Claude Jacquet
,
Piero Gamarra
et al.
Europen Microwave Week, Oct 2016, Londres, United Kingdom
Conference papers
hal-01432290v1
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Impact of trapping effects on large modulated signals characteristics of AlGaN/GaN HEMTs
Raymond Quéré
,
Guillaume Mouginot
,
Mohamad Saad El Dine
,
Jad Faraj
,
Philippe Bouysse
et al.
5th Space Agency - MOD Round table Workshop on GaN component Technologies, Sep 2010, Netherlands. pp.1-4
Conference papers
hal-00918378v1
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Modulation de polarisation en technologie GaN pour l'Envelope Tracking
Patrick Augeau
,
Philippe Bouysse
,
Audrey Martin
,
François Torres
,
Raymond Quéré
et al.
18ème Journées Nationales Microondes, May 2013, Paris, France. pp.1-4
Conference papers
hal-00918196v1
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DC/DC converters in normally-ON GaN HEMT technology for the design of RF Power Amplifiers in MMIC technology
Raymond Quéré
,
Philippe Bouysse
,
Audrey Martin
,
Olivier Jardel
,
Anthony Disserand
et al.
Wide gap power components in energy conversion , CNES, Apr 2016, Toulouse, France
Conference papers
hal-01309093v1
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Polarisation dynamique de drain et de grille d’amplificateur RF GaN appliqué à un fonctionnement RF impulsionnel à plusieurs niveaux
Arnaud Délias
,
Pierre Medrel
,
Audrey Martin
,
Philippe Bouysse
,
Jean-Michel Nebus
et al.
19ème Journées Nationales Micoroondes, IMS laboratory, Jun 2015, Bordeaux, France
Conference papers
hal-01243136v1
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Réalisation de commutateurs rapides à base de transistors GaN pour des applications de suivi d’enveloppe.
Olivier Jardel
,
Stéphane Piotrowicz
,
Philippe Bouysse
,
Audrey Martin
,
Olivier Patard
et al.
19ème Journées Nationales Micoroondes, IMS laboratory, Jun 2015, Bordeaux, France
Conference papers
hal-01243153v1
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Pulsed characterization of trapping dynamics in AlGaN/GaN HEMTs
Poornakarthik Nakkala
,
Audrey Martin
,
Michel Campovecchio
,
Sylvain Laurent
,
Philippe Bouysse
et al.
Journal articles
hal-00911562v1
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Modèle thermique non linéaire pour composants microondes de puissance
Emmanuel Gatard
,
Raphaël Sommet
,
Christophe Chang
,
Philippe Bouysse
,
Raymond Quéré
et al.
JNM, 2005, Nantes, France
Conference papers
hal-01279371v1
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Pulsed gate bias control of GaN HEMTs to improve pulse-to-pulse stability in radar applications
Julien Delprato
,
Arnaud Délias
,
Pierre Medrel
,
Denis Barataud
,
Michel Campovecchio
et al.
Journal articles
hal-01286826v1
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Time domain envelope characterisation of power amplifiers for linear and high efficiency design solutions
Pierre Medrel
,
Tibault Reveyrand
,
Audrey Martin
,
Philippe Bouysse
,
Jean-Michel Nebus
et al.
Conference papers
hal-00918052v1
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Influence du réseau de découplage sur le PSRR d'un amplificateur RF GaN
Nourreddine Khélifi
,
François Torres
,
Alain Reineix
,
Pierre Medrel
,
Philippe Bouysse
et al.
18éme Journées Nationales Microondes, May 2013, Paris, France. pp 1- 4
Conference papers
hal-00918219v1
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An Experimental Study for the Design of Dual Input Load Modulated Wideband GaN Amplifier
Alexis Courty
,
Tibault Reveyrand
,
Pierre Medrel
,
Philippe Bouysse
,
Jean-Michel Nebus
et al.
Proceedings of the 49th European Microwave Conference, EuMW 2019, Sep 2019, Paris, France
Conference papers
hal-02318853v1
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