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authIdHal_s : philippe-bouysse

Caractéristiques électriques des transistors en technologie InAlN/AlN/GaN pour les applications en bande S

Jérémy Dufraisse , Guillaume Callet , Stéphane Piotrowicz , Eric Chartier , Olivier Jardel et al.
17ème Journées Nationales Microondes, May 2011, Brest, France. pp.1-4
Conference papers hal-00918189v1

Low Frequency Parasitic Effects in RF Transistors and their Impact on Power Amplifier Performances

Raymond Quéré , Raphaël Sommet , Philippe Bouysse , Tibault Reveyrand , Denis Barataud et al.
IEEE Wireless and Microwave Technology Conference (WAMICON), Apr 2012, Cocoa Beach - Floride, United States. pp.1-5, ⟨10.1109/WAMICON.2012.6208471⟩
Conference papers hal-00707903v1

Système expérimental d'étude de la Pré-distortion d'un amplificateur de puissance commandé en polarisation

Mohamad Saad El Dine , Guillaume Neveux , Denis Barataud , Tibault Reveyrand , Philippe Bouysse et al.
17èmes Journées Nationales Microondes, May 2011, Brest, France
Conference papers hal-00708603v1

Simulation d'un limiteur bande S forte puissance a l'aide d'un nouveau modèle non-linéaire de diodes p-i-n.

Emmanuel Gatard , Philippe Bouysse , Raphaël Sommet , Raymond Quéré , M. Stanislawiak et al.
15èmes Journées Nationales Microondes., May 2007, TOULOUSE, France
Conference papers hal-00196680v1

High Switching Speed DC-DC Architecture Based on Normally-On Wide Bandgap HEMT Devices

Anthony Disserand , Olivier Jardel , Philippe Bouysse , Audrey Martin , Raymond Quéré et al.
8th Wide Bandgap Semiconductors and Components Workshop, ESA-ECSAT, Sep 2016, Harwell, United Kingdom
Conference papers hal-01432516v1

Design of an efficient and wideband two-stage GaN-HEMT power modulator

Abhijeet Dasgupta , Philippe Bouysse , Jean-Michel Nebus , Raymond Quéré
8th Wide Bandgap Semiconductors and Components Workshop, ESA-ECSAT, Sep 2016, Harwell, United Kingdom
Conference papers hal-01432534v1

GaN based supply modulator for energy efficiency enhancement of active phased array antennas

Arnaud Délias , Pierre Medrel , Audrey Martin , Philippe Bouysse , Jean-Michel Nebus et al.
International Workshop on integrated non linear microwave and millimeter wave circuits - INMMIC, Apr 2014, Belgium. pp.1-4
Conference papers hal-01021946v1

Experimental study on effect of second-harmonic injection at input of classes F and F-1 GaN power amplifiers

Alaaeddine Ramadan , Tibault Reveyrand , Audrey Martin , Jean-Michel Nebus , Philippe Bouysse et al.
Electronics Letters, 2010, 46 (8), pp.570-572. ⟨10.1049/el.2010.0392⟩
Journal articles hal-00580592v1

Low consumption and High Frequency GaN based Gate Driver Circuit with Integrated PWM

Arnaud Délias , Audrey Martin , Philippe Bouysse , Jean-Michel Nebus , Raymond Quéré et al.
Electronics Letters, 2015, 51 (18), pp.1415-1416. ⟨10.1049/el.2015.0417⟩
Journal articles hal-01243081v1
Image document

Conception d'un modulateur de puissance large-bande à deux étages en technologie GaN

Abhijeet Dasgupta , Anthony Disserand , Tibault Reveyrand , Pierre Medrel , Philippe Bouysse et al.
XXèmes Journées Nationales Microondes, May 2017, Saint-Malo, France
Conference papers hal-01525476v1
Image document

A new design approach of high efficiency S-band 25 W mixerless power modulator based on high voltage 50V GaN-HEMT technology

Abhijeet Dasgupta , Arnaud Délias , Pierre Medrel , Philippe Bouysse , Jean-Michel Nebus et al.
IEEE-MTT Asia Pacific Microwave Conference 2016, Dec 2016, New Delhi, India. ⟨10.1109/APMC.2016.7931266⟩
Conference papers hal-01553102v1

Efficiency Enhancement of GaN Power Amplifiers over Wide Bandwidth by an Active Control of Gate Source Waveforms

Alaaeddine Ramadan , Tibault Reveyrand , Audrey Martin , Jean-Michel Nebus , Philippe Bouysse et al.
5th Space Agency - MOD Round Table Workshop on GaN Component Technologies, ESTEC, Sep 2010, Noordwijk, Netherlands
Conference papers hal-00643335v1
Image document

High Speed and Highly Efficient S-Band 20 W Mixerless Vector Power Modulator

Abhijeet Dasgupta , Anthony Disserand , Jean-Michel Nebus , Audrey Martin , Philippe Bouysse et al.
International Microwave Symposium (IMS 2017), IEEE-MTT(S), Jun 2017, Honolulu, HI, United States
Conference papers hal-01541018v1

Analyse comparative des classes en commutation (F, F-1, E) pour l'amplification de puissance en technologie GaN

Alaaeddine Ramadan , D. Sardin , Tibault Reveyrand , Jean-Michel Nebus , Philippe Bouysse et al.
Journées Nationales Micro-ondes (JNM) (2009), May 2009, Grenoble, France. pp. 1C3-1C3
Conference papers hal-00758692v1

Optimisation du fonctionnement d'un amplificateur Doherty par glissement de polarisation

N Dubuc , Claude Duvanaud , Philippe Bouysse , Jean-Marie Paillot
Proc. Journées Nationales Microondes (JNM 2003), May 2003, Lille, France. pp.1C1
Conference papers hal-03759367v1

Efficiency enhancement ogf GaN power HEMTs by controlling gate source voltage waveform shape

Alaaeddine Ramadan , Audrey Martin , Tibault Reveyrand , Jean-Michel Nebus , Philippe Bouysse et al.
European Microwave Conference, 2009, Rome, Italy
Conference papers hal-00435747v1

Nouvelle architecture Doherty symétrique: Conception d'un amplificateur HEMT GaN 10 Watts bande X

Cyril Lagarde , Philippe Bouysse , Jean-Michel Nebus , Stéphane Forestier , J.F. Villemazet et al.
15èmes Journées Nationales Microondes, May 2007, TOULOUSE, France
Conference papers hal-00197193v1

Cellule de commutation de puissance à transistors à effet de champ de type normalement conducteur.

Olivier Jardel , Raymond Quéré , Stéphane Piotrowicz , Philippe Bouysse , Sylvain L. Delage et al.
France, N° de brevet: FR3020222. 2015
Patents hal-01284083v1

Normally-off AlGaN/GaN Recessed MOS-HEMTs on Normally-on Epitaxial Structures for Microwave Power Applications

Linh Trinh Xuan , Raphaël Aubry , Olivier Patard , Jean-Claude Jacquet , Piero Gamarra et al.
Europen Microwave Week, Oct 2016, Londres, United Kingdom
Conference papers hal-01432290v1

Impact of trapping effects on large modulated signals characteristics of AlGaN/GaN HEMTs

Raymond Quéré , Guillaume Mouginot , Mohamad Saad El Dine , Jad Faraj , Philippe Bouysse et al.
5th Space Agency - MOD Round table Workshop on GaN component Technologies, Sep 2010, Netherlands. pp.1-4
Conference papers hal-00918378v1

Modulation de polarisation en technologie GaN pour l'Envelope Tracking

Patrick Augeau , Philippe Bouysse , Audrey Martin , François Torres , Raymond Quéré et al.
18ème Journées Nationales Microondes, May 2013, Paris, France. pp.1-4
Conference papers hal-00918196v1

DC/DC converters in normally-ON GaN HEMT technology for the design of RF Power Amplifiers in MMIC technology

Raymond Quéré , Philippe Bouysse , Audrey Martin , Olivier Jardel , Anthony Disserand et al.
Wide gap power components in energy conversion , CNES, Apr 2016, Toulouse, France
Conference papers hal-01309093v1

Polarisation dynamique de drain et de grille d’amplificateur RF GaN appliqué à un fonctionnement RF impulsionnel à plusieurs niveaux

Arnaud Délias , Pierre Medrel , Audrey Martin , Philippe Bouysse , Jean-Michel Nebus et al.
19ème Journées Nationales Micoroondes, IMS laboratory, Jun 2015, Bordeaux, France
Conference papers hal-01243136v1

Réalisation de commutateurs rapides à base de transistors GaN pour des applications de suivi d’enveloppe.

Olivier Jardel , Stéphane Piotrowicz , Philippe Bouysse , Audrey Martin , Olivier Patard et al.
19ème Journées Nationales Micoroondes, IMS laboratory, Jun 2015, Bordeaux, France
Conference papers hal-01243153v1

Pulsed characterization of trapping dynamics in AlGaN/GaN HEMTs

Poornakarthik Nakkala , Audrey Martin , Michel Campovecchio , Sylvain Laurent , Philippe Bouysse et al.
Electronics Letters, 2013, 49 (22), pp.1406-1407. ⟨10.1049/el.2013.2304⟩
Journal articles hal-00911562v1

Modèle thermique non linéaire pour composants microondes de puissance

Emmanuel Gatard , Raphaël Sommet , Christophe Chang , Philippe Bouysse , Raymond Quéré et al.
JNM, 2005, Nantes, France
Conference papers hal-01279371v1
Image document

Pulsed gate bias control of GaN HEMTs to improve pulse-to-pulse stability in radar applications

Julien Delprato , Arnaud Délias , Pierre Medrel , Denis Barataud , Michel Campovecchio et al.
Electronics Letters, 2015, 51 (13), pp.1023-1025. ⟨10.1049/el.2015.1052⟩
Journal articles hal-01286826v1

Time domain envelope characterisation of power amplifiers for linear and high efficiency design solutions

Pierre Medrel , Tibault Reveyrand , Audrey Martin , Philippe Bouysse , Jean-Michel Nebus et al.
WAMICON, IEEE 14th Wireless and Microwave Technology Conference, Apr 2013, Orlando, United States. ⟨10.1109/WAMICON.2013.6572774⟩
Conference papers hal-00918052v1

Influence du réseau de découplage sur le PSRR d'un amplificateur RF GaN

Nourreddine Khélifi , François Torres , Alain Reineix , Pierre Medrel , Philippe Bouysse et al.
18éme Journées Nationales Microondes, May 2013, Paris, France. pp 1- 4
Conference papers hal-00918219v1

An Experimental Study for the Design of Dual Input Load Modulated Wideband GaN Amplifier

Alexis Courty , Tibault Reveyrand , Pierre Medrel , Philippe Bouysse , Jean-Michel Nebus et al.
Proceedings of the 49th European Microwave Conference, EuMW 2019, Sep 2019, Paris, France
Conference papers hal-02318853v1