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Stress relaxation in III-V nitrides: investigation of metallic atoms interaction with the N-vacancy
Rofka Ramdani
,
Viwanou Hounkpati
,
Jun Chen
,
Pierre Ruterana
Journal articles
hal-03808729v1
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A comparative structural investigation of GaN implanted with rare earth ions at room temperature and 500 °C
Florence Gloux
,
Pierre Ruterana
,
K. Lorenz
,
E. Alves
Materials Science and Engineering: B, 2008, 146, pp.204-207
Journal articles
cea-00273836v1
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The structure of InAIN/GaN heterostructures for high electron mobility transistors
Arantxa Vilalta-Clemente
,
M. A. Poisson
,
H. Behmenburg
,
C. Giesen
,
M. Heuken
et al.
physica status solidi (a), 2010, 207 (5), pp.1105-1108
Journal articles
hal-00483615v1
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Structural stability and electronic properties of the (0 0 0 1) inversion domain boundary in III-nitrides
Siqian Li
,
Huaping Lei
,
Pierre-Matthieu Anglade
,
Jun Chen
,
Pierre Ruterana
et al.
Journal articles
hal-02339795v1
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Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures
Stanislav Hasenöhrl
,
Prerna Chauhan
,
Edmund Dobročka
,
Roman Stoklas
,
Ľubomír Vančo
et al.
Journal articles
hal-02334105v1
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Epitaxial Growth of Sputtered Ultra-thin NbN Layers and Junctions on Sapphire
J.-C. Villegier
,
S. Bouat
,
P. Cavalier
,
R. Setzu
,
R. Espiau de Lamaestre
et al.
Journal articles
hal-00974758v1
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Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths
F. B. Naranjo
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P. K. Kandaswamy
,
S. Valdueza-Felip
,
V. Calvo
,
M. Gonzalez-Herraez
et al.
Journal articles
hal-00579968v1
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PAMBE growth of (112¯ 2)-oriented GaN/AlN nanostructures on m-sapphire
L. Lahourcade
,
J. Renard
,
P. K. Kandaswamy
,
B. Gayral
,
Marie-Pierre Chauvat
et al.
Microelectronics Journal, 2009, 40, pp.325-327
Journal articles
hal-00438093v1
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The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells
Nicolas Chery
,
Thi Huong Ngo
,
M.P. Chauvat
,
B. Damilano
,
A Courville
et al.
Journal of Microscopy, 2018, Special Issue: Microscopy of Semi‐Conducting Materials, 268 (3), pp.305-313. ⟨10.1111/jmi.12657⟩
Journal articles
hal-01691523v1
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Morphology and valence band offset of GaSb quantum dots grown on GaP(001) and their evolution upon capping
L. Desplanque
,
Christophe Coinon
,
David Troadec
,
Pierre Ruterana
,
Gilles J Patriarche
et al.
Journal articles
hal-02340903v1
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The atomic and electronic structure of dislocations in Ga based nitride semiconductors
Imad Belabbas
,
Pierre Ruterana
,
Jun Chen
,
Gérard Nouet
Journal articles
hal-00513682v1
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Energetic and Electronic Properties of (0001) Inversion Domain Boundaries in ZnO
Siqian Li
,
Huaping Lei
,
Zhuo Wang
,
Jun Chen
,
Pierre Ruterana
et al.
Journal articles
hal-02339596v1
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Optical doping and damage formation in AIN by Eu implantation
K. Lorenz
,
E. Alves
,
Florence Gloux
,
Pierre Ruterana
,
M. Peres
et al.
Journal of Applied Physics, 2010, 107, pp.023525
Journal articles
hal-00483610v1
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A comparative investigation of the damage build-up in GaN and Si during rare earth ion implantation
Florence Gloux
,
Pierre Ruterana
,
K. Lorenz
,
E. Alves
physica status solidi (a), 2008, 205 (1), pp.68-70
Journal articles
cea-00273848v1
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Synthesis and characterization of nanocomposites films with graphene oxide and reduced graphene oxide nanosheets
Meryem Goumri
,
Christophe Poilâne
,
Pierre Ruterana
,
Bessem Ben Doudou
,
Jany Wery
et al.
Journal articles
hal-01721002v1
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Internal quantum efficiency in polar and semipolar (11e22) InxGa1-xN/InyGa1-yN quantum wells emitting from blue to red
Thi Huong Ngo
,
Nicolas Chery
,
Pierre Valvin
,
A Courville
,
Philippe de Miery
et al.
Journal articles
hal-01700051v1
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Direct one-pot synthesis of L1 0 –FePtAg nanoparticles with uniform and very small particle sizes
Xu Chen
,
Yi Wang
,
Hanbin Wang
,
Dan Shu
,
Jun Zhang
et al.
Journal articles
hal-02340894v1
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Extended defects in nitride layers, influence on the quantum wells and quantum dots
Pierre Ruterana
,
Marie-Pierre Chauvat
,
Yadira Arroyo-Rojas Dasilva
,
Huaping Lei
,
L. Lahourcade
et al.
Conference 7602 : Photonic West OPTO: Gallium Nitride Materials and Devices V, Jan 2010, San Francisco, United States. pp.760212
Conference papers
hal-00498128v1
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Polar and Semipolar III-Nitrides for long wavelength intersubband devices
E. Monroy
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P. K. Kandaswamy
,
H. Machhadani
,
A. Wirthmüller
,
S. Sakr
et al.
Conference 7608: Photonic West 2010: Quantum Sensing and Nanophotonic Devices VII, Jan 2010, San Francisco, United States. pp.76081G
Conference papers
hal-00498138v1
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Investigation of strain effects on phase diagrams in the ternary nitride alloys (InAlN, AlGaN, InGaN)
Ranim Mohamad
,
Antoine Béré
,
Jun Chen
,
Pierre Ruterana
Journal articles
hal-02340905v1
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Effect of Cu doping on the structure and phase transition of directly synthesized FePt nanoparticles
Hanbin Wang
,
Yang Li
,
Xu Chen
,
Dan Shu
,
Xiang Liu
et al.
Journal articles
hal-02340892v1
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Role of c-screw dislocations on indium segregation in InGaN and InAIN alloys
Huaping Lei
,
Jun Chen
,
Pierre Ruterana
Applied Physics Letters, 2010, 96, pp.161901
Journal articles
hal-00483609v1
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Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs
Mehdi Rzin
,
Jean-Marc Routoure
,
Bruno Guillet
,
Laurence Méchin
,
Ezgi Dogmus
et al.
EMRS Fall Meeting, Sep 2016, Varsovie, Poland
Conference poster
hal-01641574v1
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Strain relaxation in short-period polar GaN/AIN superlattices
P. K. Kandaswamy
,
Catherine Bougerol
,
D. Jalabert
,
Pierre Ruterana
,
E. Monroy
et al.
Journal articles
hal-00438189v1
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Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics
L. Lahourcade
,
Julien Pernot
,
A. Wirthmüller
,
Marie-Pierre Chauvat
,
Pierre Ruterana
et al.
Journal articles
hal-00438206v1
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Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures
L. Lahourcade
,
P. K. Kandaswamy
,
J. Renard
,
Pierre Ruterana
,
H. Machhadani
et al.
Applied Physics Letters, 2008, 93, pp.111906
Journal articles
cea-00373661v1
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Molecular beam epitaxy of semipolar AlN(1122) and GaN(1122) on m-sapphire
Lise Lahourcade
,
Edith Bellet-Amalric
,
Eva Monroy
,
Marie-Pierre Chauvat
,
Pierre Ruterana
et al.
J Mater Sci: Mater Electron, 2008, 19, pp.805-809
Journal articles
cea-00372923v1
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Evidence of charge carrier number fluctuations in InN thin films?
Geeta Rani Mutta
,
Bruno Guillet
,
Laurence Méchin
,
Arantxa Vivalta-Clemente
,
Javier Grandal
et al.
ICNF 2011 (21th International Conference on Noise and Fluctuations), Jun 2011, toronto, Canada. pp.487-489
Conference papers
hal-00977388v1
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Characterization and modeling of Schottky diodes based on bulk GaN unintentionally doped
R. Khelifi
,
H. Mazari
,
S. Mansouri
,
Z. Benamara
,
M. Mostefaoui
et al.
Sensors & Transducers Journal, 2014, 27, pp.217
Journal articles
hal-01149661v1
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Indium segregation mechanism and V-defects formation on (0001) InAlN surface: an ab-initio investigation
Ranim Mohamad
,
Pierre Ruterana
Journal articles
hal-03047713v1
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