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authIdHal_s : pierre-ruterana
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Stress relaxation in III-V nitrides: investigation of metallic atoms interaction with the N-vacancy

Rofka Ramdani , Viwanou Hounkpati , Jun Chen , Pierre Ruterana
EPL - Europhysics Letters, 2022, 137 (6), pp.66003. ⟨10.1209/0295-5075/ac6067⟩
Journal articles hal-03808729v1

A comparative structural investigation of GaN implanted with rare earth ions at room temperature and 500 °C

Florence Gloux , Pierre Ruterana , K. Lorenz , E. Alves
Materials Science and Engineering: B, 2008, 146, pp.204-207
Journal articles cea-00273836v1

The structure of InAIN/GaN heterostructures for high electron mobility transistors

Arantxa Vilalta-Clemente , M. A. Poisson , H. Behmenburg , C. Giesen , M. Heuken et al.
physica status solidi (a), 2010, 207 (5), pp.1105-1108
Journal articles hal-00483615v1

Structural stability and electronic properties of the (0 0 0 1) inversion domain boundary in III-nitrides

Siqian Li , Huaping Lei , Pierre-Matthieu Anglade , Jun Chen , Pierre Ruterana et al.
Computational Materials Science, 2018, 154, pp.152-158. ⟨10.1016/j.commatsci.2018.07.060⟩
Journal articles hal-02339795v1

Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures

Stanislav Hasenöhrl , Prerna Chauhan , Edmund Dobročka , Roman Stoklas , Ľubomír Vančo et al.
Applied Physics Express, 2018, 12 (1), pp.014001. ⟨10.7567/1882-0786/aaef41⟩
Journal articles hal-02334105v1
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Epitaxial Growth of Sputtered Ultra-thin NbN Layers and Junctions on Sapphire

J.-C. Villegier , S. Bouat , P. Cavalier , R. Setzu , R. Espiau de Lamaestre et al.
IEEE Transactions on Applied Superconductivity, 2009, 19 (3), pp.3375-3378. ⟨10.1109/TASC.2009.2019243⟩
Journal articles hal-00974758v1

Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

F. B. Naranjo , P. K. Kandaswamy , S. Valdueza-Felip , V. Calvo , M. Gonzalez-Herraez et al.
Applied Physics Letters, 2011, 98, pp.031902. ⟨10.1063/1.3535609⟩
Journal articles hal-00579968v1

PAMBE growth of (112¯ 2)-oriented GaN/AlN nanostructures on m-sapphire

L. Lahourcade , J. Renard , P. K. Kandaswamy , B. Gayral , Marie-Pierre Chauvat et al.
Microelectronics Journal, 2009, 40, pp.325-327
Journal articles hal-00438093v1

The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells

Nicolas Chery , Thi Huong Ngo , M.P. Chauvat , B. Damilano , A Courville et al.
Journal of Microscopy, 2018, Special Issue: Microscopy of Semi‐Conducting Materials, 268 (3), pp.305-313. ⟨10.1111/jmi.12657⟩
Journal articles hal-01691523v1

Morphology and valence band offset of GaSb quantum dots grown on GaP(001) and their evolution upon capping

L. Desplanque , Christophe Coinon , David Troadec , Pierre Ruterana , Gilles J Patriarche et al.
Nanotechnology, 2017, 28 (22), pp.225601. ⟨10.1088/1361-6528/aa6f41⟩
Journal articles hal-02340903v1
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The atomic and electronic structure of dislocations in Ga based nitride semiconductors

Imad Belabbas , Pierre Ruterana , Jun Chen , Gérard Nouet
Philosophical Magazine, 2006, 86 (15), pp.2245-2273. ⟨10.1080/14786430600651996⟩
Journal articles hal-00513682v1

Energetic and Electronic Properties of (0001) Inversion Domain Boundaries in ZnO

Siqian Li , Huaping Lei , Zhuo Wang , Jun Chen , Pierre Ruterana et al.
physica status solidi (b), 2018, 255 (4), pp.1700429. ⟨10.1002/pssb.201700429⟩
Journal articles hal-02339596v1

Optical doping and damage formation in AIN by Eu implantation

K. Lorenz , E. Alves , Florence Gloux , Pierre Ruterana , M. Peres et al.
Journal of Applied Physics, 2010, 107, pp.023525
Journal articles hal-00483610v1

A comparative investigation of the damage build-up in GaN and Si during rare earth ion implantation

Florence Gloux , Pierre Ruterana , K. Lorenz , E. Alves
physica status solidi (a), 2008, 205 (1), pp.68-70
Journal articles cea-00273848v1

Synthesis and characterization of nanocomposites films with graphene oxide and reduced graphene oxide nanosheets

Meryem Goumri , Christophe Poilâne , Pierre Ruterana , Bessem Ben Doudou , Jany Wery et al.
Chinese Journal of Physics, 2017, 55 (2), pp.412 - 422. ⟨10.1016/j.cjph.2016.12.012⟩
Journal articles hal-01721002v1

Internal quantum efficiency in polar and semipolar (11e22) InxGa1-xN/InyGa1-yN quantum wells emitting from blue to red

Thi Huong Ngo , Nicolas Chery , Pierre Valvin , A Courville , Philippe de Miery et al.
Superlattices and Microstructures, 2018, 113, pp.129. ⟨10.1016/j.spmi.2017.10.030⟩
Journal articles hal-01700051v1

Direct one-pot synthesis of L1 0 –FePtAg nanoparticles with uniform and very small particle sizes

Xu Chen , Yi Wang , Hanbin Wang , Dan Shu , Jun Zhang et al.
Journal of Materials Chemistry C, 2017, 5 (22), pp.5316-5322. ⟨10.1039/c7tc01253e⟩
Journal articles hal-02340894v1

Extended defects in nitride layers, influence on the quantum wells and quantum dots

Pierre Ruterana , Marie-Pierre Chauvat , Yadira Arroyo-Rojas Dasilva , Huaping Lei , L. Lahourcade et al.
Conference 7602 : Photonic West OPTO: Gallium Nitride Materials and Devices V, Jan 2010, San Francisco, United States. pp.760212
Conference papers hal-00498128v1

Polar and Semipolar III-Nitrides for long wavelength intersubband devices

E. Monroy , P. K. Kandaswamy , H. Machhadani , A. Wirthmüller , S. Sakr et al.
Conference 7608: Photonic West 2010: Quantum Sensing and Nanophotonic Devices VII, Jan 2010, San Francisco, United States. pp.76081G
Conference papers hal-00498138v1

Investigation of strain effects on phase diagrams in the ternary nitride alloys (InAlN, AlGaN, InGaN)

Ranim Mohamad , Antoine Béré , Jun Chen , Pierre Ruterana
physica status solidi (a), 2017, 214 (9), pp.1600752. ⟨10.1002/pssa.201600752⟩
Journal articles hal-02340905v1

Effect of Cu doping on the structure and phase transition of directly synthesized FePt nanoparticles

Hanbin Wang , Yang Li , Xu Chen , Dan Shu , Xiang Liu et al.
Journal of Magnetism and Magnetic Materials, 2017, 422, pp.470-474. ⟨10.1016/j.jmmm.2016.09.047⟩
Journal articles hal-02340892v1

Role of c-screw dislocations on indium segregation in InGaN and InAIN alloys

Huaping Lei , Jun Chen , Pierre Ruterana
Applied Physics Letters, 2010, 96, pp.161901
Journal articles hal-00483609v1

Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs

Mehdi Rzin , Jean-Marc Routoure , Bruno Guillet , Laurence Méchin , Ezgi Dogmus et al.
EMRS Fall Meeting, Sep 2016, Varsovie, Poland
Conference poster hal-01641574v1

Strain relaxation in short-period polar GaN/AIN superlattices

P. K. Kandaswamy , Catherine Bougerol , D. Jalabert , Pierre Ruterana , E. Monroy et al.
Journal of Applied Physics, 2009, 106 (1), pp.013526. ⟨10.1063/1.3168431⟩
Journal articles hal-00438189v1

Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics

L. Lahourcade , Julien Pernot , A. Wirthmüller , Marie-Pierre Chauvat , Pierre Ruterana et al.
Applied Physics Letters, 2009, 95 (17), pp.171908. ⟨10.1063/1.3256189⟩
Journal articles hal-00438206v1

Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures

L. Lahourcade , P. K. Kandaswamy , J. Renard , Pierre Ruterana , H. Machhadani et al.
Applied Physics Letters, 2008, 93, pp.111906
Journal articles cea-00373661v1

Molecular beam epitaxy of semipolar AlN(1122) and GaN(1122) on m-sapphire

Lise Lahourcade , Edith Bellet-Amalric , Eva Monroy , Marie-Pierre Chauvat , Pierre Ruterana et al.
J Mater Sci: Mater Electron, 2008, 19, pp.805-809
Journal articles cea-00372923v1
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Evidence of charge carrier number fluctuations in InN thin films?

Geeta Rani Mutta , Bruno Guillet , Laurence Méchin , Arantxa Vivalta-Clemente , Javier Grandal et al.
ICNF 2011 (21th International Conference on Noise and Fluctuations), Jun 2011, toronto, Canada. pp.487-489
Conference papers hal-00977388v1

Characterization and modeling of Schottky diodes based on bulk GaN unintentionally doped

R. Khelifi , H. Mazari , S. Mansouri , Z. Benamara , M. Mostefaoui et al.
Sensors & Transducers Journal, 2014, 27, pp.217
Journal articles hal-01149661v1
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Indium segregation mechanism and V-defects formation on (0001) InAlN surface: an ab-initio investigation

Ranim Mohamad , Pierre Ruterana
Journal of Physics D: Applied Physics, 2020, 54 (1), ⟨10.1088/1361-6463/abb621⟩
Journal articles hal-03047713v1