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authIdHal_s : sylvie-contreras

High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors

Laure Bouguen , Leszek Konczewicz , Sylvie Contreras , Benoit Jouault , Jean Camassel et al.
9th International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies, Jun 2008, Lodz (POLAND), France. pp.1-4
Conference papers hal-00536293v1

Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method

Sylvie Contreras , M. Zielinski , Leszek Konczewicz , Caroline Blanc , Sandrine Juillaguet et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.633-636
Conference papers hal-00536296v1

High temperature electrical investigations of (AI,Ga)N/GaN heterostructures - Hall sensor applications

Christophe Consejo , Sylvie Contreras , Leszek Konczewicz , P. Lorenzini , Y. Cordier et al.
7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2004, Montpellier (FRANCE), France. pp.1438-1443
Conference papers hal-00543735v1

Process-induced strain in silicon-on-insulator materials

Antoine Tiberj , B. Fraisse , Caroline Blanc , Sylvie Contreras , Jean Camassel et al.
Conference on Extended Defects in Semiconductors (EDS 2002), Jun 2002, BOLOGNA (ITALY), France. pp.13411-13416
Conference papers hal-00543870v1

Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation.

Philippe Christol , C. Cervera , R. Chaghi , H. Ait-Kaci , J. B. Rodriguez et al.
Conference On Quantum Sensing and Nanophotonic Devices VII, Jan 2010, San Francisco (CA), France. pp.76081U
Conference papers hal-00543643v1
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Buffer layers inhomogeneity and coupling with epitaxial graphene unravelled by Raman scattering and graphene peeling

Tianlin Wang , Jean-Roch Huntzinger , Maxime Bayle , Christophe Roblin , Jean-Manuel Decams et al.
Carbon, 2020, 163, pp.224-233. ⟨10.1016/j.carbon.2020.03.027⟩
Journal articles hal-03034438v1

Epitaxial graphene growth and characterisation of buffer layer on SiC(0001)

Tianlin Wang , Jean-Roch Huntzinger , Jean-Manuel Decams , Maxime Bayle , Ahmed Azmi Zahab et al.
2D materials on substrates: growth & properties, Jan 2020, Villard de Lans, France
Conference papers hal-03040807v1
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GRAPHENE: FROM MATERIAL TO APPLICATIONS

P Landois , S Nanot , B Jouault , D Cakiroglu , S Contreras et al.
Graphene And Co Annual Meeting 2019, Oct 2019, Bad Herrenalb, Germany
Conference poster hal-03144975v1

High temperature electrical transport study of Si-doped AlN

Sylvie Contreras , Leszek Konczewicz , Jaweb Ben Messaoud , Herve Peyre , Mohamed Al Khalfioui et al.
Superlattices and Microstructures, 2016, 98, pp.253-258. ⟨10.1016/j.spmi.2016.08.038⟩
Journal articles hal-01425146v1

Growth of p-type monolayer graphene on SiC (0001) via sublimation at low argon pressure

Tianlin Wang , Perine Landois , Maxime Bayle , Abir Nachawaty , Wilfried Desrat et al.
GDR, Oct 2016, Oleron, France
Conference poster hal-01455032v1

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

Sylvie Contreras , Leszek Konczewicz , Pawel Kwasnicki , Roxana Arvinte , Herve Peyre et al.
16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Catane, Italy. pp.249 - 252, ⟨10.4028/www.scientific.net/MSF.858.249⟩
Conference papers hal-01936580v1

Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN

Sylvie Contreras , Leszek Konczewicz , Sandrine Juillaguet , Herve Peyre , Mohamed Al Khalfioui et al.
International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan
Conference poster hal-01937531v1

Studying the number of graphene layers on copper substrate

Perine Landois , Maxime Bayle , J.M. Decams , Axel Dieraert , Jean-Roch Huntzinger et al.
GDR-GNT, Nov 2015, Aussois, France
Conference poster hal-01340108v1

Electrical transport properties of aluminum-implanted 4H-SiC

Julien Pernot , Sylvie Contreras , Jean Camassel
Journal of Applied Physics, 2005, 98 (2), pp.23706. ⟨10.1063/1.1978987⟩
Journal articles hal-00389873v1

Ballistic effects up to room temperature in microscopic Hall sensors

Benoit Jouault , Wilfried Desrat , Olivier Couturaud , Sylvie Contreras , Dominique Mailly et al.
Journal of Applied Physics, 2009, 105 (7), pp.074504. ⟨10.1063/1.3103303⟩
Journal articles hal-00394184v1

Effect of pressure on electrical properties of short period InAs/GaSb superlattice

Leszek Konczewicz , Sylvie Contreras , H. Aït-Kaci , Y. Cuminal , Jean-Baptiste Rodriguez et al.
13th International Conference on High Pressure Semiconductor Physics (HPSP-13), Jul 2008, Fortaleza (BRAZIL), France. pp.643-647
Conference papers hal-00401354v1

Electrical transport phenomena in magnesium-doped p-type GaN

Leszek Konczewicz , Elzbieta Litwin-Staszewska , Sylvie Contreras , Ryszard Piotrzkowski , Leslaw Dmowski et al.
13th International Conference on High Pressure Semiconductor Physics (HPSP-13), Jul 2008, Fortaleza (BRAZIL), France. pp.658-663
Conference papers hal-00401355v1

Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer

H. Dmowski , Leszek Konczewicz , T. Suski , Sylvie Contreras , H. Lu et al.
HPSP 2012, Jul 2012, Montpellier, France. pp.746 - 749, ⟨10.1002/pssb.201200508⟩
Conference papers istex hal-01936833v1

Epitaxial graphene growth at low argon pressure and characterization of buffer layer on SiC(0001)

Tianlin Wang , Perine Landois , Jean-Roch Huntzinger , Ahmed Azmi Zahab , Alessandro de Cecco et al.
GDR-I Graphene and co Annual meeting 2018, Oct 2018, Sète, France
Conference papers hal-01923963v1

Epitaxial growth of low doped monolayer graphene on 4H-SIC (0001) at low argon pressure

Tianlin Wang , Perine Landois , Maxime Bayle , Jean-Roch Huntzinger , Alessandro de Cecco et al.
GDR-I Graphene and co Annual meeting 2017, Oct 2017, Aussois, France
Conference papers hal-01924058v1

Effect of pressure on electrical properties of short period InAs/GaSb superlattice

Leszek Konczewicz , Sylvie Contreras , Hocine Aït-Kaci , Yvan Cuminal , Jean-Baptiste Rodriguez et al.
physica status solidi (b), 2009, 246 (3), pp.643 - 647. ⟨10.1002/pssb.200880520⟩
Journal articles istex hal-01756707v1

4H-SiC material for Hall effect and high-temperature sensors working in harsh environments

Jean-Louis Robert , Sylvie Contreras , Jean Camassel , J. Pernot , Sandrine Juillaguet et al.
International Conference on Silicon Carbide and Related Materials, Oct 2001, TSUKUBA (JAPAN), France. pp.1435-1438
Conference papers hal-00543769v1

Electrical properties of p-type in-situ doped vs. Al-implanted 4H-SiC

J. Pernot , Sylvie Contreras , Jean Camassel , Jean-Louis Robert
5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.401-404
Conference papers hal-00543771v1

Catalytic activity and characterization of Pt/calcined CuZnAl hydrotalcites in nitrate reduction reaction in water

A. Aristizábal , M. Kolafa , Sylvie Contreras , M. Domínguez , J. Llorca et al.
Catalysis Today, 2011, 175, pp.370-379. ⟨10.1016/j.cattod.2011.02.044⟩
Journal articles istex hal-00644887v1

Optimization of the properties of the molybdenum back contact deposited by radiofrequency sputtering for Cu( In 1 − x Ga x ) Se 2 solar cells

Olivier Briot , Matthieu Moret , Camille Barbier , A. Tiberj , H. Peyre et al.
Solar Energy Materials and Solar Cells, 2018, 174, pp.418 - 422. ⟨10.1016/j.solmat.2017.09.019⟩
Journal articles hal-01596720v1

Evaluation of magnetic sensors based on AlGaN/GaN heterostructures: temperature dependence

L. Bouguen , Sylvie Contreras , Benoit Jouault , L. Konczewicz , Y. Cordier et al.
Proceeding of 16th European workshop on Heterostructure Technology, Sep 2007, Frejus, France
Conference papers hal-00394196v1

Evaluation of p-type doping for (1,1,-2,0) epitaxial layers grown on alpha-cut (1,1,-2,0) 4H-SiC substrates

Caroline Blanc , M. Zielinski , V. Souliere , C. Sartel , Sandrine Juillaguet et al.
5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.117-120
Conference papers hal-00541640v1
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High-Pressure Synthesis and Gas-Sensing Tests of 1-D Polymer/Aluminophosphate Nanocomposites

Frederico Alabarse , Michelangelo Polisi , Marco Fabbiani , Simona Quartieri , Rossella Arletti et al.
ACS Applied Materials & Interfaces, 2021, 13 (23), pp.27237-27244. ⟨10.1021/acsami.1c00625⟩
Journal articles hal-03295873v1

High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors

L. Bouguen , L. Konczewicz , S. Contreras , Benoit Jouault , J. Camassel et al.
Materials Science and Engineering: B, 2009, 165 (1-2), pp.1-4. ⟨10.1016/j.mseb.2008.11.041⟩
Journal articles hal-03037527v1
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Electrical Transport Properties of Highly Doped N-Type GaN Materials

L Konczewicz , E Litwin-Staszewska , M Zajac , H Turski , M Bockowski et al.
Semiconductor Science and Technology, 2022, 37 (5), pp.055012. ⟨10.1088/1361-6641/ac5e01⟩
Journal articles hal-03845953v1