High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors
Laure Bouguen
,
Leszek Konczewicz
,
Sylvie Contreras
,
Benoit Jouault
,
Jean Camassel
et al.
9th International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies , Jun 2008, Lodz (POLAND), France. pp.1-4
Conference papers
hal-00536293v1
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Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method
Sylvie Contreras
,
M. Zielinski
,
Leszek Konczewicz
,
Caroline Blanc
,
Sandrine Juillaguet
et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005) , Sep 2005, Pittsburgh (PA), France. pp.633-636
Conference papers
hal-00536296v1
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High temperature electrical investigations of (AI,Ga)N/GaN heterostructures - Hall sensor applications
Christophe Consejo
,
Sylvie Contreras
,
Leszek Konczewicz
,
P. Lorenzini
,
Y. Cordier
et al.
7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies , Jun 2004, Montpellier (FRANCE), France. pp.1438-1443
Conference papers
hal-00543735v1
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Process-induced strain in silicon-on-insulator materials
Antoine Tiberj
,
B. Fraisse
,
Caroline Blanc
,
Sylvie Contreras
,
Jean Camassel
et al.
Conference on Extended Defects in Semiconductors (EDS 2002) , Jun 2002, BOLOGNA (ITALY), France. pp.13411-13416
Conference papers
hal-00543870v1
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Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation.
Philippe Christol
,
C. Cervera
,
R. Chaghi
,
H. Ait-Kaci
,
J. B. Rodriguez
et al.
Conference On Quantum Sensing and Nanophotonic Devices VII , Jan 2010, San Francisco (CA), France. pp.76081U
Conference papers
hal-00543643v1
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Buffer layers inhomogeneity and coupling with epitaxial graphene unravelled by Raman scattering and graphene peeling
Tianlin Wang
,
Jean-Roch Huntzinger
,
Maxime Bayle
,
Christophe Roblin
,
Jean-Manuel Decams
et al.
Journal articles
hal-03034438v1
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Epitaxial graphene growth and characterisation of buffer layer on SiC(0001)
Tianlin Wang
,
Jean-Roch Huntzinger
,
Jean-Manuel Decams
,
Maxime Bayle
,
Ahmed Azmi Zahab
et al.
2D materials on substrates: growth & properties , Jan 2020, Villard de Lans, France
Conference papers
hal-03040807v1
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GRAPHENE: FROM MATERIAL TO APPLICATIONS
P Landois
,
S Nanot
,
B Jouault
,
D Cakiroglu
,
S Contreras
et al.
Graphene And Co Annual Meeting 2019 , Oct 2019, Bad Herrenalb, Germany
Conference poster
hal-03144975v1
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High temperature electrical transport study of Si-doped AlN
Sylvie Contreras
,
Leszek Konczewicz
,
Jaweb Ben Messaoud
,
Herve Peyre
,
Mohamed Al Khalfioui
et al.
Journal articles
hal-01425146v1
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Growth of p-type monolayer graphene on SiC (0001) via sublimation at low argon pressure
Tianlin Wang
,
Perine Landois
,
Maxime Bayle
,
Abir Nachawaty
,
Wilfried Desrat
et al.
GDR , Oct 2016, Oleron, France
Conference poster
hal-01455032v1
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Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC
Sylvie Contreras
,
Leszek Konczewicz
,
Pawel Kwasnicki
,
Roxana Arvinte
,
Herve Peyre
et al.
Conference papers
hal-01936580v1
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Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN
Sylvie Contreras
,
Leszek Konczewicz
,
Sandrine Juillaguet
,
Herve Peyre
,
Mohamed Al Khalfioui
et al.
International Workshop on Nitride Semiconductor , Nov 2018, Kanazawa, Japan
Conference poster
hal-01937531v1
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Studying the number of graphene layers on copper substrate
Perine Landois
,
Maxime Bayle
,
J.M. Decams
,
Axel Dieraert
,
Jean-Roch Huntzinger
et al.
GDR-GNT , Nov 2015, Aussois, France
Conference poster
hal-01340108v1
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Electrical transport properties of aluminum-implanted 4H-SiC
Julien Pernot
,
Sylvie Contreras
,
Jean Camassel
Journal articles
hal-00389873v1
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Ballistic effects up to room temperature in microscopic Hall sensors
Benoit Jouault
,
Wilfried Desrat
,
Olivier Couturaud
,
Sylvie Contreras
,
Dominique Mailly
et al.
Journal articles
hal-00394184v1
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Effect of pressure on electrical properties of short period InAs/GaSb superlattice
Leszek Konczewicz
,
Sylvie Contreras
,
H. Aït-Kaci
,
Y. Cuminal
,
Jean-Baptiste Rodriguez
et al.
13th International Conference on High Pressure Semiconductor Physics (HPSP-13) , Jul 2008, Fortaleza (BRAZIL), France. pp.643-647
Conference papers
hal-00401354v1
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Electrical transport phenomena in magnesium-doped p-type GaN
Leszek Konczewicz
,
Elzbieta Litwin-Staszewska
,
Sylvie Contreras
,
Ryszard Piotrzkowski
,
Leslaw Dmowski
et al.
13th International Conference on High Pressure Semiconductor Physics (HPSP-13) , Jul 2008, Fortaleza (BRAZIL), France. pp.658-663
Conference papers
hal-00401355v1
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Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer
H. Dmowski
,
Leszek Konczewicz
,
T. Suski
,
Sylvie Contreras
,
H. Lu
et al.
Conference papers
istex
hal-01936833v1
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Epitaxial graphene growth at low argon pressure and characterization of buffer layer on SiC(0001)
Tianlin Wang
,
Perine Landois
,
Jean-Roch Huntzinger
,
Ahmed Azmi Zahab
,
Alessandro de Cecco
et al.
GDR-I Graphene and co Annual meeting 2018 , Oct 2018, Sète, France
Conference papers
hal-01923963v1
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Epitaxial growth of low doped monolayer graphene on 4H-SIC (0001) at low argon pressure
Tianlin Wang
,
Perine Landois
,
Maxime Bayle
,
Jean-Roch Huntzinger
,
Alessandro de Cecco
et al.
GDR-I Graphene and co Annual meeting 2017 , Oct 2017, Aussois, France
Conference papers
hal-01924058v1
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Effect of pressure on electrical properties of short period InAs/GaSb superlattice
Leszek Konczewicz
,
Sylvie Contreras
,
Hocine Aït-Kaci
,
Yvan Cuminal
,
Jean-Baptiste Rodriguez
et al.
Journal articles
istex
hal-01756707v1
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4H-SiC material for Hall effect and high-temperature sensors working in harsh environments
Jean-Louis Robert
,
Sylvie Contreras
,
Jean Camassel
,
J. Pernot
,
Sandrine Juillaguet
et al.
International Conference on Silicon Carbide and Related Materials , Oct 2001, TSUKUBA (JAPAN), France. pp.1435-1438
Conference papers
hal-00543769v1
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Electrical properties of p-type in-situ doped vs. Al-implanted 4H-SiC
J. Pernot
,
Sylvie Contreras
,
Jean Camassel
,
Jean-Louis Robert
5th European Conference on Silicon Carbide and Related Materials , Aug 2004, Bologna (ITALY), France. pp.401-404
Conference papers
hal-00543771v1
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Catalytic activity and characterization of Pt/calcined CuZnAl hydrotalcites in nitrate reduction reaction in water
A. Aristizábal
,
M. Kolafa
,
Sylvie Contreras
,
M. Domínguez
,
J. Llorca
et al.
Journal articles
istex
hal-00644887v1
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Optimization of the properties of the molybdenum back contact deposited by radiofrequency sputtering for Cu( In 1 − x Ga x ) Se 2 solar cells
Olivier Briot
,
Matthieu Moret
,
Camille Barbier
,
A. Tiberj
,
H. Peyre
et al.
Journal articles
hal-01596720v1
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Evaluation of magnetic sensors based on AlGaN/GaN heterostructures: temperature dependence
L. Bouguen
,
Sylvie Contreras
,
Benoit Jouault
,
L. Konczewicz
,
Y. Cordier
et al.
Proceeding of 16th European workshop on Heterostructure Technology , Sep 2007, Frejus, France
Conference papers
hal-00394196v1
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Evaluation of p-type doping for (1,1,-2,0) epitaxial layers grown on alpha-cut (1,1,-2,0) 4H-SiC substrates
Caroline Blanc
,
M. Zielinski
,
V. Souliere
,
C. Sartel
,
Sandrine Juillaguet
et al.
5th European Conference on Silicon Carbide and Related Materials , Aug 2004, Bologna (ITALY), France. pp.117-120
Conference papers
hal-00541640v1
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High-Pressure Synthesis and Gas-Sensing Tests of 1-D Polymer/Aluminophosphate Nanocomposites
Frederico Alabarse
,
Michelangelo Polisi
,
Marco Fabbiani
,
Simona Quartieri
,
Rossella Arletti
et al.
Journal articles
hal-03295873v1
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High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors
L. Bouguen
,
L. Konczewicz
,
S. Contreras
,
Benoit Jouault
,
J. Camassel
et al.
Journal articles
hal-03037527v1
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Electrical Transport Properties of Highly Doped N-Type GaN Materials
L Konczewicz
,
E Litwin-Staszewska
,
M Zajac
,
H Turski
,
M Bockowski
et al.
Journal articles
hal-03845953v1
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