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application/pdfIEEEIEEE Transactions on Nuclear Science;2019;66;1;10.1109/TNS.2018.2884037CMOS image sensors (CISs)dark currentdraingate overlappartially pinned PHDradiation effectsradiation hardening by design (RHBD)threshold shifttotal ionizing dose (TID)Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose LevelsSerena RizzoloVincent GoiffonFranck CorbiereRomain MolinaAziouz ChabaneSylvain GirardPhilippe PailletPierre MagnanAziz BoukenterTimothe AllancheCyprien MullerCeline Monsanglant-LouvetMelanie OsmondHortense DesjonqueresJean-Reynald MacePierre BurnichonJean-Pierre BauduStephane Plumeri
IEEE Transactions on Nuclear Science111 Jan. 2019166110.1109/TNS.2018.2884037119
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