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Communication Dans Un Congrès Année : 2023

Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications

Résumé

This work presents the SiCOI substrates fabricated using the Smart Cut™ process. A 500nm thick monoSiC layer was successfully transferred on a thick (> 1 µm) SiO2 layer. Obtaining the optical indices by spectroscopic ellipsometry allowed us to carry out simulations of the optical structures realized on SiC on insulator. First waveguide realizations on these transferred substrates are in progress and will allow us to validate the healing of the crystal following the hydrogen ion implantation necessary for the realization of the substrates.
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Dates et versions

cea-04577306 , version 1 (16-05-2024)

Identifiants

  • HAL Id : cea-04577306 , version 1

Citer

Stéphanie Huet, Sylvain Guerber, Bertrand Szelag, Emmanuel Rolland, Guillaume Gelineau, et al.. Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications. ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy. ⟨cea-04577306⟩
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