Influence of Fluorine implantation on the physical and electrical characteristics of GaN-on-GaN vertical Schottky diode. - Groupe de Recherche en Electronique, Matériaux, Acoustique et Nanotechnologies Accéder directement au contenu
Article Dans Une Revue Microelectronic Engineering Année : 2023

Influence of Fluorine implantation on the physical and electrical characteristics of GaN-on-GaN vertical Schottky diode.

Résumé

Fluorine implantation has been reported effective in suppressing electric field at the edge of Schottky contacts in GaN due to the formation of fixed negative charged traps. In this work, we investigate the influence of fluorine implantation in GaN on material and electrical properties. A reduction in the free carrier concentration is observed by both µ-Raman and C-V measurements due to the trapping of free electron by fluorine ion. The barrier height clearly exhibits a monotonic increasing trend with increasing the implant overlap area under the Schottky contact when extracted from C-V measurements, whereas the barrier height extracted from I-V measurements remained constant. For the device without any implantation, the extracted barrier height remained same for both the extraction method. This observation suggests the existence of a high and low double barrier originating from the implant and non-implant region respectively. TCAD simulation performed by including negative charge supports the formation of double barrier. By using the barrier height extracted from C-V measurements for the implanted region, we were able to estimate the profile of fixed negative charge, which is around 10 % of the total implanted fluorine. This parameter needs to be considered while designing fluorine implantation based edge termination to create fixed charge.
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Dates et versions

hal-04092722 , version 1 (18-07-2024)

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Vishwajeet Maurya, Julien Buckley, Daniel Alquier, Helge Haas, Mohamed-Reda Irekti, et al.. Influence of Fluorine implantation on the physical and electrical characteristics of GaN-on-GaN vertical Schottky diode.. Microelectronic Engineering, 2023, 274, pp.111975. ⟨10.1016/j.mee.2023.111975⟩. ⟨hal-04092722⟩
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