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Article Dans Une Revue Energies Année : 2023

Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

Résumé

We investigated the temperature-dependent reverse characteristics (J$_R$-V$_R$-T) of vertical GaN Schottky-barrier diodes with and without a fluorine-implanted edge termination (ET). To understand the device leakage mechanism, temperature-dependent characterizations were performed, and the observed reverse current was modeled through technology computer-aided design. Different levels of current were observed in both forward and reverse biases for the ET and non-ET devices, which suggested a change in the conduction mechanism for the observed leakages. The measured J$_R$-V$_R$-T characteristics of the non-edge-terminated device were successfully fitted in the entire temperature range with the phonon-assisted tunneling model, whereas for the edge-terminated device, the reverse characteristics were modeled by taking into account the emission of trapped electrons at a high temperature and field caused by Poole–Frenkel emission.

Domaines

Electronique
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Dates et versions

hal-04166062 , version 1 (19-07-2024)

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Vishwajeet Maurya, Julien Buckley, Daniel Alquier, Mohamed-Reda Irekti, Helge Haas, et al.. Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation. Energies, 2023, 16 (14), pp.5447. ⟨10.3390/en16145447⟩. ⟨hal-04166062⟩
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