Article Dans Une Revue Journal of Electronic Materials Année : 2024

High Thermoelectric Performance of Ge–Sb–Te Nanosheets: A Density Functional Study

Résumé

This paper reports first-principles calculations on nanosheets of Ge-Sb-Te compounds, namely Sb 2 Te 3 , GeSb 2 Te 4 and Ge 2 Sb 2 Te 5 under two crystalline atomic stakings S1 and S2. Sb 2 Te 3 , GeSb 2 Te 4 and Ge 2 Sb 2 Te 5 -S1 are semiconductors with a narrow band gap ranging between 0.7 and 0.74 eV as evaluated with the HSEsol functional. The transport properties have been investigated by Boltzmann transport theory together with deformation potential method. The strain effects on their electronic and thermoelectric properties as well as on their dynamical properties have been investigated. A valence band convergence is found in the equilibrium structures, which is an efficient approach to improve the thermoelectric performance of materials. Sb 2 Te 3 , GeSb 2 Te 4 and Ge 2 Sb 2 Te 5 -S1 possess high TE performance in a wide range of temperature and the highest values of zT are 2.94, 2.63 and 2.27, respectively.

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Dates et versions

hal-04915696 , version 1 (27-01-2025)

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Jing Tian, Weiliang Ma, Marie-Christine Record, Pascal Boulet. High Thermoelectric Performance of Ge–Sb–Te Nanosheets: A Density Functional Study. Journal of Electronic Materials, 2024, 53 (7), pp.3438-3449. ⟨10.1007/s11664-024-11134-5⟩. ⟨hal-04915696⟩
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